CN104831251B - 一种对衬底进行处理的方法 - Google Patents
一种对衬底进行处理的方法 Download PDFInfo
- Publication number
- CN104831251B CN104831251B CN201510065284.7A CN201510065284A CN104831251B CN 104831251 B CN104831251 B CN 104831251B CN 201510065284 A CN201510065284 A CN 201510065284A CN 104831251 B CN104831251 B CN 104831251B
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- China
- Prior art keywords
- substrate
- cooling gas
- gas
- substrate support
- pvd
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000758 substrate Substances 0.000 title claims abstract description 175
- 238000000034 method Methods 0.000 title claims abstract description 93
- 238000012545 processing Methods 0.000 title claims abstract description 13
- 230000008569 process Effects 0.000 claims abstract description 67
- 238000005240 physical vapour deposition Methods 0.000 claims abstract description 55
- 239000000112 cooling gas Substances 0.000 claims abstract description 46
- 239000007789 gas Substances 0.000 claims description 70
- 238000004544 sputter deposition Methods 0.000 claims description 25
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 14
- 239000000203 mixture Substances 0.000 claims description 10
- 229910052786 argon Inorganic materials 0.000 claims description 7
- 239000011261 inert gas Substances 0.000 claims description 5
- 238000006073 displacement reaction Methods 0.000 claims description 3
- 229910052756 noble gas Inorganic materials 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 57
- 239000010408 film Substances 0.000 description 13
- 238000012546 transfer Methods 0.000 description 8
- 229910016570 AlCu Inorganic materials 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 239000011236 particulate material Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000001816 cooling Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 238000001878 scanning electron micrograph Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000000254 damaging effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000002427 irreversible effect Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005381 potential energy Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 230000002277 temperature effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3492—Variation of parameters during sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/541—Heating or cooling of the substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/76—Apparatus for connecting with build-up interconnects
- H01L2224/7615—Means for depositing
- H01L2224/7618—Means for blanket deposition
- H01L2224/76185—Means for physical vapour deposition [PVD]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB1402126.5 | 2014-02-07 | ||
| GBGB1402126.5A GB201402126D0 (en) | 2014-02-07 | 2014-02-07 | Method of processing a substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104831251A CN104831251A (zh) | 2015-08-12 |
| CN104831251B true CN104831251B (zh) | 2020-08-14 |
Family
ID=50390621
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510065284.7A Active CN104831251B (zh) | 2014-02-07 | 2015-02-06 | 一种对衬底进行处理的方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20150225841A1 (enExample) |
| EP (1) | EP2905354B1 (enExample) |
| JP (1) | JP2015163736A (enExample) |
| KR (2) | KR20150093622A (enExample) |
| CN (1) | CN104831251B (enExample) |
| GB (1) | GB201402126D0 (enExample) |
| TW (1) | TWI661068B (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6877133B2 (ja) * | 2016-03-28 | 2021-05-26 | 株式会社日立ハイテク | プラズマ処理装置およびプラズマ処理方法 |
| US20180148835A1 (en) | 2016-11-29 | 2018-05-31 | Lam Research Corporation | Substrate support with varying depths of areas between mesas and corresponding temperature dependent method of fabricating |
| US10748986B2 (en) | 2017-11-21 | 2020-08-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Structure and formation method of semiconductor device with capacitors |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000355766A (ja) * | 1999-06-15 | 2000-12-26 | Hitachi Kokusai Electric Inc | 基板処理装置及び基板処理方法 |
| US20030168174A1 (en) * | 2002-03-08 | 2003-09-11 | Foree Michael Todd | Gas cushion susceptor system |
| CN201006893Y (zh) * | 2006-08-28 | 2008-01-16 | 深圳豪威真空光电子股份有限公司 | 基片冷却装置 |
| CN102760679A (zh) * | 2011-04-28 | 2012-10-31 | 佳能安内华股份有限公司 | 基板托架以及使用了该托架的基板处理装置 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6060060A (ja) * | 1983-09-12 | 1985-04-06 | 株式会社日立製作所 | 鉄道車両の扉開閉装置 |
| JPS6074626A (ja) * | 1983-09-30 | 1985-04-26 | Fujitsu Ltd | ウエハー処理方法及び装置 |
| JP2671835B2 (ja) * | 1994-10-20 | 1997-11-05 | 日本電気株式会社 | スパッタ装置とその装置を用いた半導体装置の製造方法 |
| US8002463B2 (en) * | 2008-06-13 | 2011-08-23 | Asm International N.V. | Method and device for determining the temperature of a substrate |
| EP2530183A4 (en) * | 2010-01-26 | 2015-11-18 | Panasonic Ip Man Co Ltd | DEVICE FOR PRODUCING A THIN LAYER, METHOD FOR PRODUCING A THIN LAYER AND SUBSTRATE CONVEYING ROLLERS |
| WO2013070978A2 (en) * | 2011-11-08 | 2013-05-16 | Intevac, Inc. | Substrate processing system and method |
-
2014
- 2014-02-07 GB GBGB1402126.5A patent/GB201402126D0/en not_active Ceased
-
2015
- 2015-02-05 TW TW104103889A patent/TWI661068B/zh active
- 2015-02-06 JP JP2015022202A patent/JP2015163736A/ja not_active Withdrawn
- 2015-02-06 US US14/615,458 patent/US20150225841A1/en not_active Abandoned
- 2015-02-06 EP EP15154232.1A patent/EP2905354B1/en active Active
- 2015-02-06 CN CN201510065284.7A patent/CN104831251B/zh active Active
- 2015-02-09 KR KR1020150019203A patent/KR20150093622A/ko not_active Ceased
-
2021
- 2021-09-23 KR KR1020210125866A patent/KR102352695B1/ko active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000355766A (ja) * | 1999-06-15 | 2000-12-26 | Hitachi Kokusai Electric Inc | 基板処理装置及び基板処理方法 |
| US20030168174A1 (en) * | 2002-03-08 | 2003-09-11 | Foree Michael Todd | Gas cushion susceptor system |
| CN201006893Y (zh) * | 2006-08-28 | 2008-01-16 | 深圳豪威真空光电子股份有限公司 | 基片冷却装置 |
| CN102760679A (zh) * | 2011-04-28 | 2012-10-31 | 佳能安内华股份有限公司 | 基板托架以及使用了该托架的基板处理装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP2905354A1 (en) | 2015-08-12 |
| KR102352695B1 (ko) | 2022-01-17 |
| US20150225841A1 (en) | 2015-08-13 |
| CN104831251A (zh) | 2015-08-12 |
| TW201538770A (zh) | 2015-10-16 |
| GB201402126D0 (en) | 2014-03-26 |
| KR20210118797A (ko) | 2021-10-01 |
| EP2905354B1 (en) | 2021-09-15 |
| JP2015163736A (ja) | 2015-09-10 |
| TWI661068B (zh) | 2019-06-01 |
| KR20150093622A (ko) | 2015-08-18 |
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Legal Events
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|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |