KR20150093622A - 기판을 처리하는 방법 - Google Patents

기판을 처리하는 방법 Download PDF

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Publication number
KR20150093622A
KR20150093622A KR1020150019203A KR20150019203A KR20150093622A KR 20150093622 A KR20150093622 A KR 20150093622A KR 1020150019203 A KR1020150019203 A KR 1020150019203A KR 20150019203 A KR20150019203 A KR 20150019203A KR 20150093622 A KR20150093622 A KR 20150093622A
Authority
KR
South Korea
Prior art keywords
substrate
cooling gas
substrate support
way
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020150019203A
Other languages
English (en)
Korean (ko)
Inventor
폴 윌비 안소니
알 버제스 스테판
Original Assignee
에스피티에스 테크놀러지스 리미티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 에스피티에스 테크놀러지스 리미티드 filed Critical 에스피티에스 테크놀러지스 리미티드
Publication of KR20150093622A publication Critical patent/KR20150093622A/ko
Priority to KR1020210125866A priority Critical patent/KR102352695B1/ko
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H01L21/203—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3492—Variation of parameters during sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/76—Apparatus for connecting with build-up interconnects
    • H01L2224/7615—Means for depositing
    • H01L2224/7618—Means for blanket deposition
    • H01L2224/76185—Means for physical vapour deposition [PVD]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020150019203A 2014-02-07 2015-02-09 기판을 처리하는 방법 Ceased KR20150093622A (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020210125866A KR102352695B1 (ko) 2014-02-07 2021-09-23 기판을 처리하는 방법

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB1402126.5 2014-02-07
GBGB1402126.5A GB201402126D0 (en) 2014-02-07 2014-02-07 Method of processing a substrate

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020210125866A Division KR102352695B1 (ko) 2014-02-07 2021-09-23 기판을 처리하는 방법

Publications (1)

Publication Number Publication Date
KR20150093622A true KR20150093622A (ko) 2015-08-18

Family

ID=50390621

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020150019203A Ceased KR20150093622A (ko) 2014-02-07 2015-02-09 기판을 처리하는 방법
KR1020210125866A Active KR102352695B1 (ko) 2014-02-07 2021-09-23 기판을 처리하는 방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020210125866A Active KR102352695B1 (ko) 2014-02-07 2021-09-23 기판을 처리하는 방법

Country Status (7)

Country Link
US (1) US20150225841A1 (enExample)
EP (1) EP2905354B1 (enExample)
JP (1) JP2015163736A (enExample)
KR (2) KR20150093622A (enExample)
CN (1) CN104831251B (enExample)
GB (1) GB201402126D0 (enExample)
TW (1) TWI661068B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6877133B2 (ja) * 2016-03-28 2021-05-26 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法
US20180148835A1 (en) 2016-11-29 2018-05-31 Lam Research Corporation Substrate support with varying depths of areas between mesas and corresponding temperature dependent method of fabricating
US10748986B2 (en) 2017-11-21 2020-08-18 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device with capacitors

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6060060A (ja) * 1983-09-12 1985-04-06 株式会社日立製作所 鉄道車両の扉開閉装置
JPS6074626A (ja) * 1983-09-30 1985-04-26 Fujitsu Ltd ウエハー処理方法及び装置
JP2671835B2 (ja) * 1994-10-20 1997-11-05 日本電気株式会社 スパッタ装置とその装置を用いた半導体装置の製造方法
JP2000355766A (ja) * 1999-06-15 2000-12-26 Hitachi Kokusai Electric Inc 基板処理装置及び基板処理方法
US20030168174A1 (en) * 2002-03-08 2003-09-11 Foree Michael Todd Gas cushion susceptor system
CN201006893Y (zh) * 2006-08-28 2008-01-16 深圳豪威真空光电子股份有限公司 基片冷却装置
US8002463B2 (en) * 2008-06-13 2011-08-23 Asm International N.V. Method and device for determining the temperature of a substrate
CN102725436B (zh) * 2010-01-26 2014-08-06 松下电器产业株式会社 薄膜的制造装置、薄膜的制造方法及基板输送辊
JP5873251B2 (ja) * 2011-04-28 2016-03-01 キヤノンアネルバ株式会社 基板トレイ及び該トレイを用いた基板処理装置
CN104428883B (zh) * 2011-11-08 2017-02-22 因特瓦克公司 基板处理系统和方法

Also Published As

Publication number Publication date
CN104831251B (zh) 2020-08-14
GB201402126D0 (en) 2014-03-26
EP2905354B1 (en) 2021-09-15
US20150225841A1 (en) 2015-08-13
KR20210118797A (ko) 2021-10-01
TWI661068B (zh) 2019-06-01
KR102352695B1 (ko) 2022-01-17
EP2905354A1 (en) 2015-08-12
CN104831251A (zh) 2015-08-12
JP2015163736A (ja) 2015-09-10
TW201538770A (zh) 2015-10-16

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