GB1543845A - Production of a narrow opening to a surface of a material - Google Patents

Production of a narrow opening to a surface of a material

Info

Publication number
GB1543845A
GB1543845A GB18186/76A GB1818676A GB1543845A GB 1543845 A GB1543845 A GB 1543845A GB 18186/76 A GB18186/76 A GB 18186/76A GB 1818676 A GB1818676 A GB 1818676A GB 1543845 A GB1543845 A GB 1543845A
Authority
GB
United Kingdom
Prior art keywords
production
narrow opening
narrow
opening
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB18186/76A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Camera and Instrument Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US05/619,735 external-priority patent/US4063992A/en
Application filed by Fairchild Camera and Instrument Corp filed Critical Fairchild Camera and Instrument Corp
Publication of GB1543845A publication Critical patent/GB1543845A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/462—Buried-channel CCD
    • H10D44/466—Three-phase CCD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/462—Buried-channel CCD
    • H10D44/464—Two-phase CCD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0198—Integrating together multiple components covered by H10D44/00, e.g. integrating charge coupled devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Element Separation (AREA)
  • Weting (AREA)
  • Drying Of Semiconductors (AREA)
GB18186/76A 1975-05-27 1976-05-04 Production of a narrow opening to a surface of a material Expired GB1543845A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US58138975A 1975-05-27 1975-05-27
US05/619,735 US4063992A (en) 1975-05-27 1975-10-06 Edge etch method for producing narrow openings to the surface of materials

Publications (1)

Publication Number Publication Date
GB1543845A true GB1543845A (en) 1979-04-11

Family

ID=27078310

Family Applications (1)

Application Number Title Priority Date Filing Date
GB18186/76A Expired GB1543845A (en) 1975-05-27 1976-05-04 Production of a narrow opening to a surface of a material

Country Status (6)

Country Link
JP (1) JPS51145274A (enExample)
CA (1) CA1076934A (enExample)
DE (1) DE2622790A1 (enExample)
FR (1) FR2312856A1 (enExample)
GB (1) GB1543845A (enExample)
NL (1) NL7605549A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2939488A1 (de) * 1979-09-28 1981-04-16 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung von integrierten halbleiterschaltungen, insbesondere ccd-schaltungen, mit selbstjustierten, nicht ueberlappenden poly-silizium-elektroden
DE2939456A1 (de) * 1979-09-28 1981-04-16 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung von integrierten halbleiterschaltungen, insbesondere ccd-schaltungen, mit selbstjustierten, nichtueberlappenden poly-silizium-elektroden
EP0068846A1 (en) * 1981-06-26 1983-01-05 Fujitsu Limited Forming a pattern of metal elements on a substrate
US7863654B2 (en) 1998-12-21 2011-01-04 Megica Corporation Top layers of metal for high performance IC's

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS544570A (en) * 1977-06-13 1979-01-13 Nec Corp Production of semiconductor devices
JPS5533064A (en) * 1978-08-29 1980-03-08 Chiyou Lsi Gijutsu Kenkyu Kumiai Method of manufacturing semiconductor device
FR2454698A1 (fr) * 1979-04-20 1980-11-14 Radiotechnique Compelec Procede de realisation de circuits integres a l'aide d'un masque multicouche et dispositifs obtenus par ce procede
US4317690A (en) 1980-06-18 1982-03-02 Signetics Corporation Self-aligned double polysilicon MOS fabrication
US4318759A (en) * 1980-07-21 1982-03-09 Data General Corporation Retro-etch process for integrated circuits
US5126811A (en) * 1990-01-29 1992-06-30 Mitsubishi Denki Kabushiki Kaisha Charge transfer device with electrode structure of high transfer efficiency
RU2112300C1 (ru) * 1995-03-10 1998-05-27 Институт физики полупроводников СО РАН Способ изготовления защитной маски для нанолитографии

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7005296A (enExample) * 1969-04-15 1970-10-19
JPS4874178A (enExample) * 1971-12-29 1973-10-05
FR2305022A1 (fr) * 1975-03-21 1976-10-15 Western Electric Co Procede de fabrication de transistors

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2939488A1 (de) * 1979-09-28 1981-04-16 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung von integrierten halbleiterschaltungen, insbesondere ccd-schaltungen, mit selbstjustierten, nicht ueberlappenden poly-silizium-elektroden
DE2939456A1 (de) * 1979-09-28 1981-04-16 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung von integrierten halbleiterschaltungen, insbesondere ccd-schaltungen, mit selbstjustierten, nichtueberlappenden poly-silizium-elektroden
EP0068846A1 (en) * 1981-06-26 1983-01-05 Fujitsu Limited Forming a pattern of metal elements on a substrate
US7863654B2 (en) 1998-12-21 2011-01-04 Megica Corporation Top layers of metal for high performance IC's
US7884479B2 (en) 1998-12-21 2011-02-08 Megica Corporation Top layers of metal for high performance IC's
US7999384B2 (en) 1998-12-21 2011-08-16 Megica Corporation Top layers of metal for high performance IC's
US8022545B2 (en) 1998-12-21 2011-09-20 Megica Corporation Top layers of metal for high performance IC's
US8415800B2 (en) 1998-12-21 2013-04-09 Megica Corporation Top layers of metal for high performance IC's
US8471384B2 (en) 1998-12-21 2013-06-25 Megica Corporation Top layers of metal for high performance IC's
US8531038B2 (en) 1998-12-21 2013-09-10 Megica Corporation Top layers of metal for high performance IC's

Also Published As

Publication number Publication date
DE2622790A1 (de) 1976-12-09
NL7605549A (nl) 1976-11-30
AU1437576A (en) 1977-12-01
FR2312856A1 (fr) 1976-12-24
FR2312856B1 (enExample) 1982-11-05
JPS5711505B2 (enExample) 1982-03-04
CA1076934A (en) 1980-05-06
JPS51145274A (en) 1976-12-14

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee