JPS5711505B2 - - Google Patents
Info
- Publication number
- JPS5711505B2 JPS5711505B2 JP6070876A JP6070876A JPS5711505B2 JP S5711505 B2 JPS5711505 B2 JP S5711505B2 JP 6070876 A JP6070876 A JP 6070876A JP 6070876 A JP6070876 A JP 6070876A JP S5711505 B2 JPS5711505 B2 JP S5711505B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D44/00—Charge transfer devices
- H10D44/40—Charge-coupled devices [CCD]
- H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes
- H10D44/462—Buried-channel CCD
- H10D44/466—Three-phase CCD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D44/00—Charge transfer devices
- H10D44/40—Charge-coupled devices [CCD]
- H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes
- H10D44/462—Buried-channel CCD
- H10D44/464—Two-phase CCD
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0198—Integrating together multiple components covered by H10D44/00, e.g. integrating charge coupled devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Element Separation (AREA)
- Weting (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US58138975A | 1975-05-27 | 1975-05-27 | |
| US05/619,735 US4063992A (en) | 1975-05-27 | 1975-10-06 | Edge etch method for producing narrow openings to the surface of materials |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS51145274A JPS51145274A (en) | 1976-12-14 |
| JPS5711505B2 true JPS5711505B2 (enExample) | 1982-03-04 |
Family
ID=27078310
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP51060708A Granted JPS51145274A (en) | 1975-05-27 | 1976-05-27 | Method of manufacturing semiconductor element and structure of semiconductor used in that method |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS51145274A (enExample) |
| CA (1) | CA1076934A (enExample) |
| DE (1) | DE2622790A1 (enExample) |
| FR (1) | FR2312856A1 (enExample) |
| GB (1) | GB1543845A (enExample) |
| NL (1) | NL7605549A (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS544570A (en) * | 1977-06-13 | 1979-01-13 | Nec Corp | Production of semiconductor devices |
| JPS5533064A (en) * | 1978-08-29 | 1980-03-08 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Method of manufacturing semiconductor device |
| FR2454698A1 (fr) * | 1979-04-20 | 1980-11-14 | Radiotechnique Compelec | Procede de realisation de circuits integres a l'aide d'un masque multicouche et dispositifs obtenus par ce procede |
| DE2939456A1 (de) * | 1979-09-28 | 1981-04-16 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur herstellung von integrierten halbleiterschaltungen, insbesondere ccd-schaltungen, mit selbstjustierten, nichtueberlappenden poly-silizium-elektroden |
| DE2939488A1 (de) * | 1979-09-28 | 1981-04-16 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur herstellung von integrierten halbleiterschaltungen, insbesondere ccd-schaltungen, mit selbstjustierten, nicht ueberlappenden poly-silizium-elektroden |
| US4317690A (en) | 1980-06-18 | 1982-03-02 | Signetics Corporation | Self-aligned double polysilicon MOS fabrication |
| US4318759A (en) * | 1980-07-21 | 1982-03-09 | Data General Corporation | Retro-etch process for integrated circuits |
| JPS581878A (ja) * | 1981-06-26 | 1983-01-07 | Fujitsu Ltd | 磁気バブルメモリ素子の製造方法 |
| US5126811A (en) * | 1990-01-29 | 1992-06-30 | Mitsubishi Denki Kabushiki Kaisha | Charge transfer device with electrode structure of high transfer efficiency |
| RU2112300C1 (ru) * | 1995-03-10 | 1998-05-27 | Институт физики полупроводников СО РАН | Способ изготовления защитной маски для нанолитографии |
| US6965165B2 (en) | 1998-12-21 | 2005-11-15 | Mou-Shiung Lin | Top layers of metal for high performance IC's |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL7005296A (enExample) * | 1969-04-15 | 1970-10-19 | ||
| JPS4874178A (enExample) * | 1971-12-29 | 1973-10-05 | ||
| FR2305022A1 (fr) * | 1975-03-21 | 1976-10-15 | Western Electric Co | Procede de fabrication de transistors |
-
1976
- 1976-05-04 GB GB18186/76A patent/GB1543845A/en not_active Expired
- 1976-05-21 DE DE19762622790 patent/DE2622790A1/de not_active Withdrawn
- 1976-05-24 NL NL7605549A patent/NL7605549A/xx not_active Application Discontinuation
- 1976-05-25 FR FR7615774A patent/FR2312856A1/fr active Granted
- 1976-05-26 CA CA253,422A patent/CA1076934A/en not_active Expired
- 1976-05-27 JP JP51060708A patent/JPS51145274A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| DE2622790A1 (de) | 1976-12-09 |
| NL7605549A (nl) | 1976-11-30 |
| GB1543845A (en) | 1979-04-11 |
| AU1437576A (en) | 1977-12-01 |
| FR2312856A1 (fr) | 1976-12-24 |
| FR2312856B1 (enExample) | 1982-11-05 |
| CA1076934A (en) | 1980-05-06 |
| JPS51145274A (en) | 1976-12-14 |