GB1543845A - Production of a narrow opening to a surface of a material - Google Patents

Production of a narrow opening to a surface of a material

Info

Publication number
GB1543845A
GB1543845A GB1818676A GB1818676A GB1543845A GB 1543845 A GB1543845 A GB 1543845A GB 1818676 A GB1818676 A GB 1818676A GB 1818676 A GB1818676 A GB 1818676A GB 1543845 A GB1543845 A GB 1543845A
Authority
GB
United Kingdom
Prior art keywords
production
narrow opening
narrow
opening
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1818676A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Camera and Instrument Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US05/619,735 external-priority patent/US4063992A/en
Application filed by Fairchild Camera and Instrument Corp filed Critical Fairchild Camera and Instrument Corp
Publication of GB1543845A publication Critical patent/GB1543845A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76833—Buried channel CCD
    • H01L29/7685—Three-Phase CCD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823406—Combination of charge coupled devices, i.e. CCD, or BBD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76833—Buried channel CCD
    • H01L29/76841—Two-Phase CCD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Weting (AREA)
  • Element Separation (AREA)
  • Drying Of Semiconductors (AREA)
GB1818676A 1975-05-27 1976-05-04 Production of a narrow opening to a surface of a material Expired GB1543845A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US58138975A 1975-05-27 1975-05-27
US05/619,735 US4063992A (en) 1975-05-27 1975-10-06 Edge etch method for producing narrow openings to the surface of materials

Publications (1)

Publication Number Publication Date
GB1543845A true GB1543845A (en) 1979-04-11

Family

ID=27078310

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1818676A Expired GB1543845A (en) 1975-05-27 1976-05-04 Production of a narrow opening to a surface of a material

Country Status (6)

Country Link
JP (1) JPS51145274A (en)
CA (1) CA1076934A (en)
DE (1) DE2622790A1 (en)
FR (1) FR2312856A1 (en)
GB (1) GB1543845A (en)
NL (1) NL7605549A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2939456A1 (en) * 1979-09-28 1981-04-16 Siemens AG, 1000 Berlin und 8000 München METHOD FOR PRODUCING INTEGRATED SEMICONDUCTOR CIRCUITS, IN PARTICULAR CCD CIRCUITS, WITH SELF-ADJUSTED, NON-OVERLAPPING POLY-SILICON ELECTRODES
DE2939488A1 (en) * 1979-09-28 1981-04-16 Siemens AG, 1000 Berlin und 8000 München METHOD FOR PRODUCING INTEGRATED SEMICONDUCTOR CIRCUITS, IN PARTICULAR CCD CIRCUITS, WITH SELF-ADJUSTED, NON-OVERLAPPING POLY-SILICON ELECTRODES
EP0068846A1 (en) * 1981-06-26 1983-01-05 Fujitsu Limited Forming a pattern of metal elements on a substrate
US7863654B2 (en) 1998-12-21 2011-01-04 Megica Corporation Top layers of metal for high performance IC's

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS544570A (en) * 1977-06-13 1979-01-13 Nec Corp Production of semiconductor devices
JPS5533064A (en) * 1978-08-29 1980-03-08 Chiyou Lsi Gijutsu Kenkyu Kumiai Method of manufacturing semiconductor device
FR2454698A1 (en) * 1979-04-20 1980-11-14 Radiotechnique Compelec METHOD FOR PRODUCING INTEGRATED CIRCUITS USING A MULTILAYER MASK AND DEVICES OBTAINED BY THIS METHOD
US4318759A (en) * 1980-07-21 1982-03-09 Data General Corporation Retro-etch process for integrated circuits
US5126811A (en) * 1990-01-29 1992-06-30 Mitsubishi Denki Kabushiki Kaisha Charge transfer device with electrode structure of high transfer efficiency

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1292060A (en) * 1969-04-15 1972-10-11 Tokyo Shibaura Electric Co A method of manufacturing a semiconductor device
JPS4874178A (en) * 1971-12-29 1973-10-05
MX3855E (en) * 1975-03-21 1981-08-20 Western Electric Co IMPROVEMENTS IN THE METHOD FOR MANUFACTURING TRANSISTOR STRUCTURES

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2939456A1 (en) * 1979-09-28 1981-04-16 Siemens AG, 1000 Berlin und 8000 München METHOD FOR PRODUCING INTEGRATED SEMICONDUCTOR CIRCUITS, IN PARTICULAR CCD CIRCUITS, WITH SELF-ADJUSTED, NON-OVERLAPPING POLY-SILICON ELECTRODES
DE2939488A1 (en) * 1979-09-28 1981-04-16 Siemens AG, 1000 Berlin und 8000 München METHOD FOR PRODUCING INTEGRATED SEMICONDUCTOR CIRCUITS, IN PARTICULAR CCD CIRCUITS, WITH SELF-ADJUSTED, NON-OVERLAPPING POLY-SILICON ELECTRODES
EP0068846A1 (en) * 1981-06-26 1983-01-05 Fujitsu Limited Forming a pattern of metal elements on a substrate
US7863654B2 (en) 1998-12-21 2011-01-04 Megica Corporation Top layers of metal for high performance IC's
US7884479B2 (en) 1998-12-21 2011-02-08 Megica Corporation Top layers of metal for high performance IC's
US7999384B2 (en) 1998-12-21 2011-08-16 Megica Corporation Top layers of metal for high performance IC's
US8022545B2 (en) 1998-12-21 2011-09-20 Megica Corporation Top layers of metal for high performance IC's
US8415800B2 (en) 1998-12-21 2013-04-09 Megica Corporation Top layers of metal for high performance IC's
US8471384B2 (en) 1998-12-21 2013-06-25 Megica Corporation Top layers of metal for high performance IC's
US8531038B2 (en) 1998-12-21 2013-09-10 Megica Corporation Top layers of metal for high performance IC's

Also Published As

Publication number Publication date
FR2312856B1 (en) 1982-11-05
JPS5711505B2 (en) 1982-03-04
DE2622790A1 (en) 1976-12-09
NL7605549A (en) 1976-11-30
CA1076934A (en) 1980-05-06
JPS51145274A (en) 1976-12-14
FR2312856A1 (en) 1976-12-24
AU1437576A (en) 1977-12-01

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee