GB1532616A - Photo-voltaic power generating means and methods - Google Patents
Photo-voltaic power generating means and methodsInfo
- Publication number
- GB1532616A GB1532616A GB22719/77A GB2271977A GB1532616A GB 1532616 A GB1532616 A GB 1532616A GB 22719/77 A GB22719/77 A GB 22719/77A GB 2271977 A GB2271977 A GB 2271977A GB 1532616 A GB1532616 A GB 1532616A
- Authority
- GB
- United Kingdom
- Prior art keywords
- conductor
- semi
- transparent
- electro
- layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 abstract 5
- 238000000151 deposition Methods 0.000 abstract 3
- 150000001875 compounds Chemical class 0.000 abstract 2
- 239000004020 conductor Substances 0.000 abstract 2
- 230000008021 deposition Effects 0.000 abstract 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 abstract 1
- 230000004075 alteration Effects 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- 230000004888 barrier function Effects 0.000 abstract 1
- 229910052793 cadmium Inorganic materials 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- 239000011159 matrix material Substances 0.000 abstract 1
- 229910052753 mercury Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 229910052711 selenium Inorganic materials 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052717 sulfur Inorganic materials 0.000 abstract 1
- 229910052714 tellurium Inorganic materials 0.000 abstract 1
- 229910052725 zinc Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02425—Conductive materials, e.g. metallic silicides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02557—Sulfides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/0256—Selenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02562—Tellurides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
- H10F71/1253—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe comprising at least three elements, e.g. HgCdTe
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Photovoltaic Devices (AREA)
- Hybrid Cells (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US69389076A | 1976-06-08 | 1976-06-08 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1532616A true GB1532616A (en) | 1978-11-15 |
Family
ID=24786541
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB22719/77A Expired GB1532616A (en) | 1976-06-08 | 1977-05-30 | Photo-voltaic power generating means and methods |
Country Status (11)
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4253919A (en) * | 1980-01-21 | 1981-03-03 | The International Nickel Company, Inc. | Electrodeposition of cadmium-selenium semiconducting photoelectrodes from an acid citrate bath |
| US4256544A (en) * | 1980-04-04 | 1981-03-17 | Bell Telephone Laboratories, Incorporated | Method of making metal-chalcogenide photosensitive devices |
| US4260427A (en) * | 1979-06-18 | 1981-04-07 | Ametek, Inc. | CdTe Schottky barrier photovoltaic cell |
| US4261802A (en) * | 1980-02-21 | 1981-04-14 | Ametek, Inc. | Method of making a photovoltaic cell |
| US4296188A (en) * | 1979-07-07 | 1981-10-20 | Yeda Research And Development Company Ltd. | Cd(Se,Te) Alloy photovoltaic materials |
| US4345107A (en) * | 1979-06-18 | 1982-08-17 | Ametek, Inc. | Cadmium telluride photovoltaic cells |
| US4465565A (en) * | 1983-03-28 | 1984-08-14 | Ford Aerospace & Communications Corporation | CdTe passivation of HgCdTe by electrochemical deposition |
| US4710589A (en) * | 1986-10-21 | 1987-12-01 | Ametek, Inc. | Heterojunction p-i-n photovoltaic cell |
| US4977097A (en) * | 1986-10-21 | 1990-12-11 | Ametek, Inc. | Method of making heterojunction P-I-N photovoltaic cell |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2810605C2 (de) * | 1978-03-11 | 1980-03-13 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Elektrolytisches Abscheideverfahren zur Herstellung von großflächigen Halbleiterbauelementen |
| US4192721A (en) * | 1979-04-24 | 1980-03-11 | Baranski Andrzej S | Method for producing a smooth coherent film of a metal chalconide |
| JPS5714574A (en) * | 1980-06-27 | 1982-01-25 | Otsuka Pharmaceut Co Ltd | Carbostyril derivative |
| CA1165016A (en) * | 1981-03-16 | 1984-04-03 | Bulent M. Basol | Plugged pinhole thin film and method of making same |
| US4548681A (en) * | 1984-02-03 | 1985-10-22 | The Standard Oil Company (Ohio) | Electrodeposition of thin film heterojunction photovoltaic devices that utilize Cd rich Hg1-x Cdx Te |
| US4611091A (en) * | 1984-12-06 | 1986-09-09 | Atlantic Richfield Company | CuInSe2 thin film solar cell with thin CdS and transparent window layer |
| JPS61202478A (ja) * | 1985-03-05 | 1986-09-08 | Agency Of Ind Science & Technol | 光起電力素子の製造方法 |
| US5319377A (en) * | 1992-04-07 | 1994-06-07 | Hughes Aircraft Company | Wideband arrayable planar radiator |
| DE29706857U1 (de) * | 1997-04-16 | 1997-12-11 | Gauss, Edmund, 40668 Meerbusch | Stromerzeugungseinheit, u.a. bestehend aus Elektronenüberschuß erzeugender Farbe oder Folie und Stromspeicher |
| LU91561B1 (en) * | 2009-04-30 | 2010-11-02 | Univ Luxembourg | Electrical and opto-electrical characterisation oflarge-area semiconductor devices. |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3051636A (en) * | 1960-03-30 | 1962-08-28 | Minnesota Mining & Mfg | Electrolytic preparation of cadmium salts |
| US3419484A (en) * | 1966-03-23 | 1968-12-31 | Chrysler Corp | Electrolytic preparation of semiconductor compounds |
| NL6618449A (enrdf_load_stackoverflow) * | 1966-12-12 | 1968-07-01 | ||
| US3573177A (en) * | 1968-01-11 | 1971-03-30 | Us Army | Electrochemical methods for production of films and coatings of semiconductors |
| JPS50115486A (enrdf_load_stackoverflow) * | 1974-02-20 | 1975-09-10 | ||
| US3887446A (en) * | 1974-07-26 | 1975-06-03 | Us Navy | Electrochemical preparation of metallic tellurides |
| JPS5138888A (en) * | 1974-09-27 | 1976-03-31 | Matsushita Electric Ind Co Ltd | Handotaisoshino seizohoho |
-
1977
- 1977-05-30 GB GB22719/77A patent/GB1532616A/en not_active Expired
- 1977-06-01 IL IL52216A patent/IL52216A/xx unknown
- 1977-06-06 FR FR7717257A patent/FR2354131A1/fr active Granted
- 1977-06-06 MX MX169350A patent/MX145655A/es unknown
- 1977-06-07 CA CA280,011A patent/CA1077161A/en not_active Expired
- 1977-06-08 AU AU25947/77A patent/AU513645B2/en not_active Expired
- 1977-06-08 NL NLAANVRAGE7706280,A patent/NL186611C/xx not_active IP Right Cessation
- 1977-06-08 IT IT24457/77A patent/IT1080884B/it active
- 1977-06-08 DE DE19772726009 patent/DE2726009A1/de not_active Withdrawn
- 1977-06-08 JP JP6678477A patent/JPS5310989A/ja active Granted
- 1977-06-08 BE BE178290A patent/BE855499A/xx not_active IP Right Cessation
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4260427A (en) * | 1979-06-18 | 1981-04-07 | Ametek, Inc. | CdTe Schottky barrier photovoltaic cell |
| US4345107A (en) * | 1979-06-18 | 1982-08-17 | Ametek, Inc. | Cadmium telluride photovoltaic cells |
| US4296188A (en) * | 1979-07-07 | 1981-10-20 | Yeda Research And Development Company Ltd. | Cd(Se,Te) Alloy photovoltaic materials |
| US4253919A (en) * | 1980-01-21 | 1981-03-03 | The International Nickel Company, Inc. | Electrodeposition of cadmium-selenium semiconducting photoelectrodes from an acid citrate bath |
| US4261802A (en) * | 1980-02-21 | 1981-04-14 | Ametek, Inc. | Method of making a photovoltaic cell |
| US4256544A (en) * | 1980-04-04 | 1981-03-17 | Bell Telephone Laboratories, Incorporated | Method of making metal-chalcogenide photosensitive devices |
| US4465565A (en) * | 1983-03-28 | 1984-08-14 | Ford Aerospace & Communications Corporation | CdTe passivation of HgCdTe by electrochemical deposition |
| US4710589A (en) * | 1986-10-21 | 1987-12-01 | Ametek, Inc. | Heterojunction p-i-n photovoltaic cell |
| US4977097A (en) * | 1986-10-21 | 1990-12-11 | Ametek, Inc. | Method of making heterojunction P-I-N photovoltaic cell |
Also Published As
| Publication number | Publication date |
|---|---|
| AU513645B2 (en) | 1980-12-11 |
| JPS5310989A (en) | 1978-01-31 |
| NL186611C (nl) | 1991-01-02 |
| CA1077161A (en) | 1980-05-06 |
| BE855499A (fr) | 1977-10-03 |
| DE2726009A1 (de) | 1977-12-29 |
| IL52216A (en) | 1980-01-31 |
| JPS6132831B2 (enrdf_load_stackoverflow) | 1986-07-29 |
| NL7706280A (nl) | 1977-12-12 |
| FR2354131A1 (fr) | 1978-01-06 |
| IL52216A0 (en) | 1977-08-31 |
| NL186611B (nl) | 1990-08-01 |
| AU2594777A (en) | 1978-12-14 |
| MX145655A (es) | 1982-03-19 |
| IT1080884B (it) | 1985-05-16 |
| FR2354131B1 (enrdf_load_stackoverflow) | 1983-01-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 19960530 |