FR2354131A1 - Procede de fabrication de cellules semi-conductrices a effet photovoltaique et cellules ainsi obtenues - Google Patents
Procede de fabrication de cellules semi-conductrices a effet photovoltaique et cellules ainsi obtenuesInfo
- Publication number
- FR2354131A1 FR2354131A1 FR7717257A FR7717257A FR2354131A1 FR 2354131 A1 FR2354131 A1 FR 2354131A1 FR 7717257 A FR7717257 A FR 7717257A FR 7717257 A FR7717257 A FR 7717257A FR 2354131 A1 FR2354131 A1 FR 2354131A1
- Authority
- FR
- France
- Prior art keywords
- cathode
- cells
- electrolyte
- component
- discharge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 title abstract 2
- 239000003792 electrolyte Substances 0.000 abstract 5
- 150000002500 ions Chemical class 0.000 abstract 2
- 230000009466 transformation Effects 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02425—Conductive materials, e.g. metallic silicides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02557—Sulfides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/0256—Selenides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02562—Tellurides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
- H01L31/1832—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising ternary compounds, e.g. Hg Cd Te
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Development (AREA)
- Photovoltaic Devices (AREA)
- Hybrid Cells (AREA)
Abstract
L'invention concerne un procédé pour fabriquer électrochimiquement une cellule photovoltaïque semi-conductrice. Selon l'invention, on introduit une cathode 102 dans un électrolyte 106, la cathode étant sensiblement inerte à l'électrolyte, on introduit une anode 104 dans l'électrolyte, on relie une source de courant électrique 108 à travers la cathode 102 et l'anode 104, on prévoit un premier composant dans l'électrolyte qui se dissocie pour produire des ions qui se déchargent sur la cathode, et on introduit un second composant dans l'électrolyte pour produire des ions ou molécules du composant qui se déchargent ou se décomposent sur la cathode, le second composant se combinant au premier composant sur la cathode pour former le semi-conducteur. La présente invention s'applique notamment à la transformation d'énergie solaire en énergie électrique.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US69389076A | 1976-06-08 | 1976-06-08 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2354131A1 true FR2354131A1 (fr) | 1978-01-06 |
FR2354131B1 FR2354131B1 (fr) | 1983-01-21 |
Family
ID=24786541
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7717257A Granted FR2354131A1 (fr) | 1976-06-08 | 1977-06-06 | Procede de fabrication de cellules semi-conductrices a effet photovoltaique et cellules ainsi obtenues |
Country Status (11)
Country | Link |
---|---|
JP (1) | JPS5310989A (fr) |
AU (1) | AU513645B2 (fr) |
BE (1) | BE855499A (fr) |
CA (1) | CA1077161A (fr) |
DE (1) | DE2726009A1 (fr) |
FR (1) | FR2354131A1 (fr) |
GB (1) | GB1532616A (fr) |
IL (1) | IL52216A (fr) |
IT (1) | IT1080884B (fr) |
MX (1) | MX145655A (fr) |
NL (1) | NL186611C (fr) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2419337A1 (fr) * | 1978-03-11 | 1979-10-05 | Licentia Gmbh | Procede de deposition electrolytique pour la preparation d'elements de structure semi-conducteurs a grande surface |
FR2455098A1 (fr) * | 1979-04-24 | 1980-11-21 | Tdc Technology Dev Corp | Procede de production de pellicules lisses et coherentes electrolytiques de chalcogenures metalliques par depot |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4345107A (en) * | 1979-06-18 | 1982-08-17 | Ametek, Inc. | Cadmium telluride photovoltaic cells |
US4260427A (en) * | 1979-06-18 | 1981-04-07 | Ametek, Inc. | CdTe Schottky barrier photovoltaic cell |
IL57908A0 (en) * | 1979-07-07 | 1979-11-30 | Yeda Res & Dev | Photovoltaic materials |
US4253919A (en) * | 1980-01-21 | 1981-03-03 | The International Nickel Company, Inc. | Electrodeposition of cadmium-selenium semiconducting photoelectrodes from an acid citrate bath |
US4261802A (en) * | 1980-02-21 | 1981-04-14 | Ametek, Inc. | Method of making a photovoltaic cell |
US4256544A (en) * | 1980-04-04 | 1981-03-17 | Bell Telephone Laboratories, Incorporated | Method of making metal-chalcogenide photosensitive devices |
JPS5714574A (en) * | 1980-06-27 | 1982-01-25 | Otsuka Pharmaceut Co Ltd | Carbostyril derivative |
IN158650B (fr) * | 1981-03-16 | 1986-12-27 | Sohio Commercial Dev Co | |
US4465565A (en) * | 1983-03-28 | 1984-08-14 | Ford Aerospace & Communications Corporation | CdTe passivation of HgCdTe by electrochemical deposition |
US4548681A (en) * | 1984-02-03 | 1985-10-22 | The Standard Oil Company (Ohio) | Electrodeposition of thin film heterojunction photovoltaic devices that utilize Cd rich Hg1-x Cdx Te |
US4611091A (en) * | 1984-12-06 | 1986-09-09 | Atlantic Richfield Company | CuInSe2 thin film solar cell with thin CdS and transparent window layer |
JPS61202478A (ja) * | 1985-03-05 | 1986-09-08 | Agency Of Ind Science & Technol | 光起電力素子の製造方法 |
US4710589A (en) * | 1986-10-21 | 1987-12-01 | Ametek, Inc. | Heterojunction p-i-n photovoltaic cell |
US4977097A (en) * | 1986-10-21 | 1990-12-11 | Ametek, Inc. | Method of making heterojunction P-I-N photovoltaic cell |
US5319377A (en) * | 1992-04-07 | 1994-06-07 | Hughes Aircraft Company | Wideband arrayable planar radiator |
DE29706857U1 (de) * | 1997-04-16 | 1997-12-11 | Gauss, Edmund, 40668 Meerbusch | Stromerzeugungseinheit, u.a. bestehend aus Elektronenüberschuß erzeugender Farbe oder Folie und Stromspeicher |
LU91561B1 (en) * | 2009-04-30 | 2010-11-02 | Univ Luxembourg | Electrical and opto-electrical characterisation oflarge-area semiconductor devices. |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3051636A (en) * | 1960-03-30 | 1962-08-28 | Minnesota Mining & Mfg | Electrolytic preparation of cadmium salts |
US3419484A (en) * | 1966-03-23 | 1968-12-31 | Chrysler Corp | Electrolytic preparation of semiconductor compounds |
US3887446A (en) * | 1974-07-26 | 1975-06-03 | Us Navy | Electrochemical preparation of metallic tellurides |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL6618449A (fr) * | 1966-12-12 | 1968-07-01 | ||
US3573177A (en) * | 1968-01-11 | 1971-03-30 | Us Army | Electrochemical methods for production of films and coatings of semiconductors |
JPS50115486A (fr) * | 1974-02-20 | 1975-09-10 | ||
JPS5138888A (en) * | 1974-09-27 | 1976-03-31 | Matsushita Electric Ind Co Ltd | Handotaisoshino seizohoho |
-
1977
- 1977-05-30 GB GB22719/77A patent/GB1532616A/en not_active Expired
- 1977-06-01 IL IL52216A patent/IL52216A/xx unknown
- 1977-06-06 MX MX169350A patent/MX145655A/es unknown
- 1977-06-06 FR FR7717257A patent/FR2354131A1/fr active Granted
- 1977-06-07 CA CA280,011A patent/CA1077161A/fr not_active Expired
- 1977-06-08 DE DE19772726009 patent/DE2726009A1/de not_active Withdrawn
- 1977-06-08 BE BE178290A patent/BE855499A/fr not_active IP Right Cessation
- 1977-06-08 IT IT24457/77A patent/IT1080884B/it active
- 1977-06-08 NL NLAANVRAGE7706280,A patent/NL186611C/xx not_active IP Right Cessation
- 1977-06-08 JP JP6678477A patent/JPS5310989A/ja active Granted
- 1977-06-08 AU AU25947/77A patent/AU513645B2/en not_active Expired
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3051636A (en) * | 1960-03-30 | 1962-08-28 | Minnesota Mining & Mfg | Electrolytic preparation of cadmium salts |
US3419484A (en) * | 1966-03-23 | 1968-12-31 | Chrysler Corp | Electrolytic preparation of semiconductor compounds |
US3887446A (en) * | 1974-07-26 | 1975-06-03 | Us Navy | Electrochemical preparation of metallic tellurides |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2419337A1 (fr) * | 1978-03-11 | 1979-10-05 | Licentia Gmbh | Procede de deposition electrolytique pour la preparation d'elements de structure semi-conducteurs a grande surface |
FR2455098A1 (fr) * | 1979-04-24 | 1980-11-21 | Tdc Technology Dev Corp | Procede de production de pellicules lisses et coherentes electrolytiques de chalcogenures metalliques par depot |
Also Published As
Publication number | Publication date |
---|---|
IL52216A (en) | 1980-01-31 |
NL7706280A (nl) | 1977-12-12 |
NL186611C (nl) | 1991-01-02 |
BE855499A (fr) | 1977-10-03 |
JPS6132831B2 (fr) | 1986-07-29 |
GB1532616A (en) | 1978-11-15 |
MX145655A (es) | 1982-03-19 |
AU513645B2 (en) | 1980-12-11 |
DE2726009A1 (de) | 1977-12-29 |
CA1077161A (fr) | 1980-05-06 |
FR2354131B1 (fr) | 1983-01-21 |
NL186611B (nl) | 1990-08-01 |
AU2594777A (en) | 1978-12-14 |
JPS5310989A (en) | 1978-01-31 |
IL52216A0 (en) | 1977-08-31 |
IT1080884B (it) | 1985-05-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
TP | Transmission of property | ||
ST | Notification of lapse |