FR2419337A1 - Procede de deposition electrolytique pour la preparation d'elements de structure semi-conducteurs a grande surface - Google Patents
Procede de deposition electrolytique pour la preparation d'elements de structure semi-conducteurs a grande surfaceInfo
- Publication number
- FR2419337A1 FR2419337A1 FR7905560A FR7905560A FR2419337A1 FR 2419337 A1 FR2419337 A1 FR 2419337A1 FR 7905560 A FR7905560 A FR 7905560A FR 7905560 A FR7905560 A FR 7905560A FR 2419337 A1 FR2419337 A1 FR 2419337A1
- Authority
- FR
- France
- Prior art keywords
- surface area
- large surface
- preparation
- deposition process
- structural elements
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000005137 deposition process Methods 0.000 title 1
- 150000001875 compounds Chemical class 0.000 abstract 3
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000003792 electrolyte Substances 0.000 abstract 1
- 238000001179 sorption measurement Methods 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
- C30B7/12—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by electrolysis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02557—Sulfides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/0256—Selenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/38—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions
- H01L21/388—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electrochemistry (AREA)
- Electrolytic Production Of Non-Metals, Compounds, Apparatuses Therefor (AREA)
- Photovoltaic Devices (AREA)
- Bipolar Transistors (AREA)
- Electrolytic Production Of Metals (AREA)
- Electrodes For Compound Or Non-Metal Manufacture (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Selon l'invention, on utilise comme électrodes deux couches métalliques, on.soumet l'un des deux composants à réduction cathodique et adsorption sur l'une des deux électrodes, le second composant étant dissous dans l'électrolyte et réagissant avec le composant réduit à la cathode avec formation d'un composé semi-conducteur binaire qui est un composé III/V ou II/VI. Le composé selon l'invention permet de préparer à bas prix des couches à grande surface, utilisables par exemple dans des cellules solaires.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2810605A DE2810605C2 (de) | 1978-03-11 | 1978-03-11 | Elektrolytisches Abscheideverfahren zur Herstellung von großflächigen Halbleiterbauelementen |
Publications (1)
Publication Number | Publication Date |
---|---|
FR2419337A1 true FR2419337A1 (fr) | 1979-10-05 |
Family
ID=6034150
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7905560A Withdrawn FR2419337A1 (fr) | 1978-03-11 | 1979-03-02 | Procede de deposition electrolytique pour la preparation d'elements de structure semi-conducteurs a grande surface |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPS54127295A (fr) |
BE (1) | BE874719A (fr) |
DE (1) | DE2810605C2 (fr) |
FR (1) | FR2419337A1 (fr) |
GB (1) | GB2016049B (fr) |
NL (1) | NL7901697A (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2455098A1 (fr) * | 1979-04-24 | 1980-11-21 | Tdc Technology Dev Corp | Procede de production de pellicules lisses et coherentes electrolytiques de chalcogenures metalliques par depot |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4376682A (en) * | 1980-04-07 | 1983-03-15 | Tdc Technology Development Corporation | Method for producing smooth coherent metal chalconide films |
DE3266579D1 (en) * | 1981-11-25 | 1985-10-31 | Secr Defence Brit | Organometallic adducts |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1121427B (de) * | 1960-07-21 | 1962-01-04 | Siemens Ag | Verfahren zum galvanischen Abscheiden von insbesondere duennen Schichten aus halbleitenden A B-Verbindungen |
FR1552289A (fr) * | 1967-01-13 | 1969-01-03 | ||
FR2354131A1 (fr) * | 1976-06-08 | 1978-01-06 | Monosolar Inc | Procede de fabrication de cellules semi-conductrices a effet photovoltaique et cellules ainsi obtenues |
-
1978
- 1978-03-11 DE DE2810605A patent/DE2810605C2/de not_active Expired
-
1979
- 1979-03-02 FR FR7905560A patent/FR2419337A1/fr not_active Withdrawn
- 1979-03-02 NL NL7901697A patent/NL7901697A/xx unknown
- 1979-03-07 GB GB7908051A patent/GB2016049B/en not_active Expired
- 1979-03-09 BE BE0/193926A patent/BE874719A/fr not_active IP Right Cessation
- 1979-03-09 JP JP2680679A patent/JPS54127295A/ja active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1121427B (de) * | 1960-07-21 | 1962-01-04 | Siemens Ag | Verfahren zum galvanischen Abscheiden von insbesondere duennen Schichten aus halbleitenden A B-Verbindungen |
FR1552289A (fr) * | 1967-01-13 | 1969-01-03 | ||
FR2354131A1 (fr) * | 1976-06-08 | 1978-01-06 | Monosolar Inc | Procede de fabrication de cellules semi-conductrices a effet photovoltaique et cellules ainsi obtenues |
Non-Patent Citations (2)
Title |
---|
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 125, no. 12, décembre 1978, pages 2028-2034, Princeton, US * |
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 125, no. 4, avril 1978, pages 566-572, Princeton, US * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2455098A1 (fr) * | 1979-04-24 | 1980-11-21 | Tdc Technology Dev Corp | Procede de production de pellicules lisses et coherentes electrolytiques de chalcogenures metalliques par depot |
Also Published As
Publication number | Publication date |
---|---|
DE2810605C2 (de) | 1980-03-13 |
BE874719A (fr) | 1979-07-02 |
GB2016049A (en) | 1979-09-19 |
DE2810605B1 (de) | 1979-07-12 |
NL7901697A (nl) | 1979-09-13 |
GB2016049B (en) | 1982-08-18 |
JPS54127295A (en) | 1979-10-03 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |