MX145655A - Mejoras en metodo para elaborar una celda fotovoltaica generadora de corriente - Google Patents
Mejoras en metodo para elaborar una celda fotovoltaica generadora de corrienteInfo
- Publication number
- MX145655A MX145655A MX169350A MX16935077A MX145655A MX 145655 A MX145655 A MX 145655A MX 169350 A MX169350 A MX 169350A MX 16935077 A MX16935077 A MX 16935077A MX 145655 A MX145655 A MX 145655A
- Authority
- MX
- Mexico
- Prior art keywords
- prepare
- photovoltaic cell
- current generating
- generating photovoltaic
- current
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02425—Conductive materials, e.g. metallic silicides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02557—Sulfides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/0256—Selenides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02562—Tellurides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
- H01L31/1832—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising ternary compounds, e.g. Hg Cd Te
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Development (AREA)
- Photovoltaic Devices (AREA)
- Hybrid Cells (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US69389076A | 1976-06-08 | 1976-06-08 |
Publications (1)
Publication Number | Publication Date |
---|---|
MX145655A true MX145655A (es) | 1982-03-19 |
Family
ID=24786541
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MX169350A MX145655A (es) | 1976-06-08 | 1977-06-06 | Mejoras en metodo para elaborar una celda fotovoltaica generadora de corriente |
Country Status (11)
Country | Link |
---|---|
JP (1) | JPS5310989A (es) |
AU (1) | AU513645B2 (es) |
BE (1) | BE855499A (es) |
CA (1) | CA1077161A (es) |
DE (1) | DE2726009A1 (es) |
FR (1) | FR2354131A1 (es) |
GB (1) | GB1532616A (es) |
IL (1) | IL52216A (es) |
IT (1) | IT1080884B (es) |
MX (1) | MX145655A (es) |
NL (1) | NL186611C (es) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2810605C2 (de) * | 1978-03-11 | 1980-03-13 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Elektrolytisches Abscheideverfahren zur Herstellung von großflächigen Halbleiterbauelementen |
US4192721A (en) * | 1979-04-24 | 1980-03-11 | Baranski Andrzej S | Method for producing a smooth coherent film of a metal chalconide |
US4345107A (en) * | 1979-06-18 | 1982-08-17 | Ametek, Inc. | Cadmium telluride photovoltaic cells |
US4260427A (en) * | 1979-06-18 | 1981-04-07 | Ametek, Inc. | CdTe Schottky barrier photovoltaic cell |
IL57908A0 (en) * | 1979-07-07 | 1979-11-30 | Yeda Res & Dev | Photovoltaic materials |
US4253919A (en) * | 1980-01-21 | 1981-03-03 | The International Nickel Company, Inc. | Electrodeposition of cadmium-selenium semiconducting photoelectrodes from an acid citrate bath |
US4261802A (en) * | 1980-02-21 | 1981-04-14 | Ametek, Inc. | Method of making a photovoltaic cell |
US4256544A (en) * | 1980-04-04 | 1981-03-17 | Bell Telephone Laboratories, Incorporated | Method of making metal-chalcogenide photosensitive devices |
JPS5714574A (en) * | 1980-06-27 | 1982-01-25 | Otsuka Pharmaceut Co Ltd | Carbostyril derivative |
IN158650B (es) * | 1981-03-16 | 1986-12-27 | Sohio Commercial Dev Co | |
US4465565A (en) * | 1983-03-28 | 1984-08-14 | Ford Aerospace & Communications Corporation | CdTe passivation of HgCdTe by electrochemical deposition |
US4548681A (en) * | 1984-02-03 | 1985-10-22 | The Standard Oil Company (Ohio) | Electrodeposition of thin film heterojunction photovoltaic devices that utilize Cd rich Hg1-x Cdx Te |
US4611091A (en) * | 1984-12-06 | 1986-09-09 | Atlantic Richfield Company | CuInSe2 thin film solar cell with thin CdS and transparent window layer |
JPS61202478A (ja) * | 1985-03-05 | 1986-09-08 | Agency Of Ind Science & Technol | 光起電力素子の製造方法 |
US4710589A (en) * | 1986-10-21 | 1987-12-01 | Ametek, Inc. | Heterojunction p-i-n photovoltaic cell |
US4977097A (en) * | 1986-10-21 | 1990-12-11 | Ametek, Inc. | Method of making heterojunction P-I-N photovoltaic cell |
US5319377A (en) * | 1992-04-07 | 1994-06-07 | Hughes Aircraft Company | Wideband arrayable planar radiator |
DE29706857U1 (de) * | 1997-04-16 | 1997-12-11 | Gauss, Edmund, 40668 Meerbusch | Stromerzeugungseinheit, u.a. bestehend aus Elektronenüberschuß erzeugender Farbe oder Folie und Stromspeicher |
LU91561B1 (en) * | 2009-04-30 | 2010-11-02 | Univ Luxembourg | Electrical and opto-electrical characterisation oflarge-area semiconductor devices. |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3051636A (en) * | 1960-03-30 | 1962-08-28 | Minnesota Mining & Mfg | Electrolytic preparation of cadmium salts |
US3419484A (en) * | 1966-03-23 | 1968-12-31 | Chrysler Corp | Electrolytic preparation of semiconductor compounds |
NL6618449A (es) * | 1966-12-12 | 1968-07-01 | ||
US3573177A (en) * | 1968-01-11 | 1971-03-30 | Us Army | Electrochemical methods for production of films and coatings of semiconductors |
JPS50115486A (es) * | 1974-02-20 | 1975-09-10 | ||
US3887446A (en) * | 1974-07-26 | 1975-06-03 | Us Navy | Electrochemical preparation of metallic tellurides |
JPS5138888A (en) * | 1974-09-27 | 1976-03-31 | Matsushita Electric Ind Co Ltd | Handotaisoshino seizohoho |
-
1977
- 1977-05-30 GB GB22719/77A patent/GB1532616A/en not_active Expired
- 1977-06-01 IL IL52216A patent/IL52216A/xx unknown
- 1977-06-06 MX MX169350A patent/MX145655A/es unknown
- 1977-06-06 FR FR7717257A patent/FR2354131A1/fr active Granted
- 1977-06-07 CA CA280,011A patent/CA1077161A/en not_active Expired
- 1977-06-08 DE DE19772726009 patent/DE2726009A1/de not_active Withdrawn
- 1977-06-08 BE BE178290A patent/BE855499A/xx not_active IP Right Cessation
- 1977-06-08 AU AU25947/77A patent/AU513645B2/en not_active Expired
- 1977-06-08 JP JP6678477A patent/JPS5310989A/ja active Granted
- 1977-06-08 IT IT24457/77A patent/IT1080884B/it active
- 1977-06-08 NL NLAANVRAGE7706280,A patent/NL186611C/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
BE855499A (fr) | 1977-10-03 |
IT1080884B (it) | 1985-05-16 |
NL186611B (nl) | 1990-08-01 |
AU513645B2 (en) | 1980-12-11 |
IL52216A0 (en) | 1977-08-31 |
IL52216A (en) | 1980-01-31 |
DE2726009A1 (de) | 1977-12-29 |
CA1077161A (en) | 1980-05-06 |
JPS6132831B2 (es) | 1986-07-29 |
JPS5310989A (en) | 1978-01-31 |
FR2354131B1 (es) | 1983-01-21 |
NL186611C (nl) | 1991-01-02 |
AU2594777A (en) | 1978-12-14 |
GB1532616A (en) | 1978-11-15 |
NL7706280A (nl) | 1977-12-12 |
FR2354131A1 (fr) | 1978-01-06 |
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