MX152808A - Mejoras a una celda fotovoltaica y metodo para producirla - Google Patents

Mejoras a una celda fotovoltaica y metodo para producirla

Info

Publication number
MX152808A
MX152808A MX182769A MX18276980A MX152808A MX 152808 A MX152808 A MX 152808A MX 182769 A MX182769 A MX 182769A MX 18276980 A MX18276980 A MX 18276980A MX 152808 A MX152808 A MX 152808A
Authority
MX
Mexico
Prior art keywords
produce
photovoltaic cell
photovoltaic
cell
Prior art date
Application number
MX182769A
Other languages
English (en)
Inventor
Gabor F Fulop
Jacob F Betz
Peter V Meyers
Mitchell E Doti
Original Assignee
Ametek Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ametek Inc filed Critical Ametek Inc
Publication of MX152808A publication Critical patent/MX152808A/es

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00Manufacture or treatment of devices covered by this subclass
    • H10F71/125The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00Individual photovoltaic cells, e.g. solar cells
    • H10F10/10Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/18Photovoltaic cells having only Schottky potential barriers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00Manufacture or treatment of devices covered by this subclass
    • H10F71/128Annealing
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901Materials
    • H10P14/2923Materials being conductive materials, e.g. metallic silicides
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202Materials thereof
    • H10P14/3241Materials thereof being conductive materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34Deposited materials, e.g. layers
    • H10P14/3402Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3424Deposited materials, e.g. layers characterised by the chemical composition being Group IIB-VIA materials
    • H10P14/3432Tellurides
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/543Solar cells from Group II-VI materials
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product
MX182769A 1979-06-18 1980-06-13 Mejoras a una celda fotovoltaica y metodo para producirla MX152808A (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/049,728 US4260427A (en) 1979-06-18 1979-06-18 CdTe Schottky barrier photovoltaic cell

Publications (1)

Publication Number Publication Date
MX152808A true MX152808A (es) 1986-06-10

Family

ID=21961377

Family Applications (1)

Application Number Title Priority Date Filing Date
MX182769A MX152808A (es) 1979-06-18 1980-06-13 Mejoras a una celda fotovoltaica y metodo para producirla

Country Status (9)

Country Link
US (1) US4260427A (es)
EP (1) EP0021774B1 (es)
JP (1) JPS5649579A (es)
AU (2) AU534829B2 (es)
DE (1) DE3063300D1 (es)
ES (1) ES8102420A1 (es)
IL (1) IL60250A (es)
MX (1) MX152808A (es)
ZA (1) ZA803427B (es)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4345107A (en) * 1979-06-18 1982-08-17 Ametek, Inc. Cadmium telluride photovoltaic cells
US4319069A (en) * 1980-07-25 1982-03-09 Eastman Kodak Company Semiconductor devices having improved low-resistance contacts to p-type CdTe, and method of preparation
US4388483A (en) * 1981-09-08 1983-06-14 Monosolar, Inc. Thin film heterojunction photovoltaic cells and methods of making the same
US4376016A (en) * 1981-11-16 1983-03-08 Tdc Technology Development Corporation Baths for electrodeposition of metal chalconide films
US4465565A (en) * 1983-03-28 1984-08-14 Ford Aerospace & Communications Corporation CdTe passivation of HgCdTe by electrochemical deposition
US4909857A (en) * 1986-05-06 1990-03-20 Standard Oil Company Electrodeposited doped II-VI semiconductor films and devices incorporating such films
US4816120A (en) * 1986-05-06 1989-03-28 The Standard Oil Company Electrodeposited doped II-VI semiconductor films and devices incorporating such films
US4689247A (en) * 1986-05-15 1987-08-25 Ametek, Inc. Process and apparatus for forming thin films
US4873198A (en) * 1986-10-21 1989-10-10 Ametek, Inc. Method of making photovoltaic cell with chloride dip
JPH01111380A (ja) * 1987-10-23 1989-04-28 Sumitomo Metal Ind Ltd 光起電力素子及びその製造方法
JPH01189969A (ja) * 1988-01-26 1989-07-31 Sumitomo Metal Ind Ltd 光起電力素子及びその製造方法
JPH01293577A (ja) * 1988-05-20 1989-11-27 Sumitomo Metal Ind Ltd 光起電力素子及びその製造方法
JPH06507143A (ja) * 1991-01-11 1994-08-11 ユニバーシティ・オブ・ジョージア・リサーチ・ファウンデーション・インコーポレーテッド 化合物半導体を電気化学的に析出する方法
US5501744A (en) * 1992-01-13 1996-03-26 Photon Energy, Inc. Photovoltaic cell having a p-type polycrystalline layer with large crystals
US7645933B2 (en) * 2005-03-02 2010-01-12 Wisconsin Alumni Research Foundation Carbon nanotube Schottky barrier photovoltaic cell
WO2008039461A2 (en) * 2006-09-27 2008-04-03 Thinsilicon Corp. Back contact device for photovoltaic cells and method of manufacturing a back contact
WO2008150769A2 (en) * 2007-05-31 2008-12-11 Thinsilicon Corporation Photovoltaic device and method of manufacturing photovoltaic devices
US8664524B2 (en) 2008-07-17 2014-03-04 Uriel Solar, Inc. High power efficiency, large substrate, polycrystalline CdTe thin film semiconductor photovoltaic cell structures grown by molecular beam epitaxy at high deposition rate for use in solar electricity generation
US20110129742A1 (en) * 2008-07-31 2011-06-02 The Board Of Trustees Of The University Of Illinois Nonequilibrium Chemovoltaic Fuel Cell
EP2332177A4 (en) * 2008-09-29 2012-12-26 Thinsilicon Corp MONOLITHICALLY INTEGRATED SOLAR MODULE
WO2010129163A2 (en) * 2009-05-06 2010-11-11 Thinsilicon Corporation Photovoltaic cells and methods to enhance light trapping in semiconductor layer stacks
WO2010144421A2 (en) * 2009-06-10 2010-12-16 Thinsilicon Corporation Photovoltaic modules and methods of manufacturing photovoltaic modules having multiple semiconductor layer stacks
US20110114156A1 (en) * 2009-06-10 2011-05-19 Thinsilicon Corporation Photovoltaic modules having a built-in bypass diode and methods for manufacturing photovoltaic modules having a built-in bypass diode
CN102714252A (zh) * 2009-12-10 2012-10-03 乌利尔太阳能有限公司 用于太阳能发电的高功率效率多晶CdTe薄膜半导体光伏电池结构

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3419484A (en) * 1966-03-23 1968-12-31 Chrysler Corp Electrolytic preparation of semiconductor compounds
FR1566642A (es) * 1968-03-26 1969-05-09
US3982260A (en) * 1975-08-01 1976-09-21 Mobil Tyco Solar Energy Corporation Light sensitive electronic devices
US4035197A (en) * 1976-03-30 1977-07-12 Eastman Kodak Company Barrier type photovoltaic cells with enhanced open-circuit voltage, and process of manufacture
GB1532616A (en) * 1976-06-08 1978-11-15 Monsolar Inc Photo-voltaic power generating means and methods
GB2006268A (en) * 1977-10-14 1979-05-02 Univ Queensland Preparation of semiconductor films on electrically conductive substrates
US4192721A (en) * 1979-04-24 1980-03-11 Baranski Andrzej S Method for producing a smooth coherent film of a metal chalconide

Also Published As

Publication number Publication date
AU5939880A (en) 1981-01-08
ZA803427B (en) 1981-06-24
US4260427A (en) 1981-04-07
ES492504A0 (es) 1980-12-16
EP0021774A1 (en) 1981-01-07
JPS5649579A (en) 1981-05-06
IL60250A (en) 1983-05-15
EP0021774B1 (en) 1983-05-18
AU534829B2 (en) 1984-02-16
DE3063300D1 (en) 1983-07-07
AU549483B2 (en) 1986-01-30
AU2156883A (en) 1984-03-29
ES8102420A1 (es) 1980-12-16
IL60250A0 (en) 1980-09-16

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