MX152808A - Mejoras a una celda fotovoltaica y metodo para producirla - Google Patents
Mejoras a una celda fotovoltaica y metodo para producirlaInfo
- Publication number
- MX152808A MX152808A MX182769A MX18276980A MX152808A MX 152808 A MX152808 A MX 152808A MX 182769 A MX182769 A MX 182769A MX 18276980 A MX18276980 A MX 18276980A MX 152808 A MX152808 A MX 152808A
- Authority
- MX
- Mexico
- Prior art keywords
- produce
- photovoltaic cell
- photovoltaic
- cell
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/18—Photovoltaic cells having only Schottky potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/128—Annealing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
- H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
- H10P14/2901—Materials
- H10P14/2923—Materials being conductive materials, e.g. metallic silicides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
- H10P14/3202—Materials thereof
- H10P14/3241—Materials thereof being conductive materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
- H10P14/3424—Deposited materials, e.g. layers characterised by the chemical composition being Group IIB-VIA materials
- H10P14/3432—Tellurides
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/049,728 US4260427A (en) | 1979-06-18 | 1979-06-18 | CdTe Schottky barrier photovoltaic cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| MX152808A true MX152808A (es) | 1986-06-10 |
Family
ID=21961377
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MX182769A MX152808A (es) | 1979-06-18 | 1980-06-13 | Mejoras a una celda fotovoltaica y metodo para producirla |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US4260427A (es) |
| EP (1) | EP0021774B1 (es) |
| JP (1) | JPS5649579A (es) |
| AU (2) | AU534829B2 (es) |
| DE (1) | DE3063300D1 (es) |
| ES (1) | ES8102420A1 (es) |
| IL (1) | IL60250A (es) |
| MX (1) | MX152808A (es) |
| ZA (1) | ZA803427B (es) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4345107A (en) * | 1979-06-18 | 1982-08-17 | Ametek, Inc. | Cadmium telluride photovoltaic cells |
| US4319069A (en) * | 1980-07-25 | 1982-03-09 | Eastman Kodak Company | Semiconductor devices having improved low-resistance contacts to p-type CdTe, and method of preparation |
| US4388483A (en) * | 1981-09-08 | 1983-06-14 | Monosolar, Inc. | Thin film heterojunction photovoltaic cells and methods of making the same |
| US4376016A (en) * | 1981-11-16 | 1983-03-08 | Tdc Technology Development Corporation | Baths for electrodeposition of metal chalconide films |
| US4465565A (en) * | 1983-03-28 | 1984-08-14 | Ford Aerospace & Communications Corporation | CdTe passivation of HgCdTe by electrochemical deposition |
| US4909857A (en) * | 1986-05-06 | 1990-03-20 | Standard Oil Company | Electrodeposited doped II-VI semiconductor films and devices incorporating such films |
| US4816120A (en) * | 1986-05-06 | 1989-03-28 | The Standard Oil Company | Electrodeposited doped II-VI semiconductor films and devices incorporating such films |
| US4689247A (en) * | 1986-05-15 | 1987-08-25 | Ametek, Inc. | Process and apparatus for forming thin films |
| US4873198A (en) * | 1986-10-21 | 1989-10-10 | Ametek, Inc. | Method of making photovoltaic cell with chloride dip |
| JPH01111380A (ja) * | 1987-10-23 | 1989-04-28 | Sumitomo Metal Ind Ltd | 光起電力素子及びその製造方法 |
| JPH01189969A (ja) * | 1988-01-26 | 1989-07-31 | Sumitomo Metal Ind Ltd | 光起電力素子及びその製造方法 |
| JPH01293577A (ja) * | 1988-05-20 | 1989-11-27 | Sumitomo Metal Ind Ltd | 光起電力素子及びその製造方法 |
| JPH06507143A (ja) * | 1991-01-11 | 1994-08-11 | ユニバーシティ・オブ・ジョージア・リサーチ・ファウンデーション・インコーポレーテッド | 化合物半導体を電気化学的に析出する方法 |
| US5501744A (en) * | 1992-01-13 | 1996-03-26 | Photon Energy, Inc. | Photovoltaic cell having a p-type polycrystalline layer with large crystals |
| US7645933B2 (en) * | 2005-03-02 | 2010-01-12 | Wisconsin Alumni Research Foundation | Carbon nanotube Schottky barrier photovoltaic cell |
| WO2008039461A2 (en) * | 2006-09-27 | 2008-04-03 | Thinsilicon Corp. | Back contact device for photovoltaic cells and method of manufacturing a back contact |
| WO2008150769A2 (en) * | 2007-05-31 | 2008-12-11 | Thinsilicon Corporation | Photovoltaic device and method of manufacturing photovoltaic devices |
| US8664524B2 (en) | 2008-07-17 | 2014-03-04 | Uriel Solar, Inc. | High power efficiency, large substrate, polycrystalline CdTe thin film semiconductor photovoltaic cell structures grown by molecular beam epitaxy at high deposition rate for use in solar electricity generation |
| US20110129742A1 (en) * | 2008-07-31 | 2011-06-02 | The Board Of Trustees Of The University Of Illinois | Nonequilibrium Chemovoltaic Fuel Cell |
| EP2332177A4 (en) * | 2008-09-29 | 2012-12-26 | Thinsilicon Corp | MONOLITHICALLY INTEGRATED SOLAR MODULE |
| WO2010129163A2 (en) * | 2009-05-06 | 2010-11-11 | Thinsilicon Corporation | Photovoltaic cells and methods to enhance light trapping in semiconductor layer stacks |
| WO2010144421A2 (en) * | 2009-06-10 | 2010-12-16 | Thinsilicon Corporation | Photovoltaic modules and methods of manufacturing photovoltaic modules having multiple semiconductor layer stacks |
| US20110114156A1 (en) * | 2009-06-10 | 2011-05-19 | Thinsilicon Corporation | Photovoltaic modules having a built-in bypass diode and methods for manufacturing photovoltaic modules having a built-in bypass diode |
| CN102714252A (zh) * | 2009-12-10 | 2012-10-03 | 乌利尔太阳能有限公司 | 用于太阳能发电的高功率效率多晶CdTe薄膜半导体光伏电池结构 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3419484A (en) * | 1966-03-23 | 1968-12-31 | Chrysler Corp | Electrolytic preparation of semiconductor compounds |
| FR1566642A (es) * | 1968-03-26 | 1969-05-09 | ||
| US3982260A (en) * | 1975-08-01 | 1976-09-21 | Mobil Tyco Solar Energy Corporation | Light sensitive electronic devices |
| US4035197A (en) * | 1976-03-30 | 1977-07-12 | Eastman Kodak Company | Barrier type photovoltaic cells with enhanced open-circuit voltage, and process of manufacture |
| GB1532616A (en) * | 1976-06-08 | 1978-11-15 | Monsolar Inc | Photo-voltaic power generating means and methods |
| GB2006268A (en) * | 1977-10-14 | 1979-05-02 | Univ Queensland | Preparation of semiconductor films on electrically conductive substrates |
| US4192721A (en) * | 1979-04-24 | 1980-03-11 | Baranski Andrzej S | Method for producing a smooth coherent film of a metal chalconide |
-
1979
- 1979-06-18 US US06/049,728 patent/US4260427A/en not_active Expired - Lifetime
-
1980
- 1980-06-06 IL IL60250A patent/IL60250A/xx unknown
- 1980-06-09 ZA ZA00803427A patent/ZA803427B/xx unknown
- 1980-06-13 MX MX182769A patent/MX152808A/es unknown
- 1980-06-17 ES ES492504A patent/ES8102420A1/es not_active Expired
- 1980-06-17 DE DE8080302036T patent/DE3063300D1/de not_active Expired
- 1980-06-17 EP EP80302036A patent/EP0021774B1/en not_active Expired
- 1980-06-18 JP JP8155180A patent/JPS5649579A/ja active Pending
- 1980-06-18 AU AU59398/80A patent/AU534829B2/en not_active Ceased
-
1983
- 1983-11-21 AU AU21568/83A patent/AU549483B2/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| AU5939880A (en) | 1981-01-08 |
| ZA803427B (en) | 1981-06-24 |
| US4260427A (en) | 1981-04-07 |
| ES492504A0 (es) | 1980-12-16 |
| EP0021774A1 (en) | 1981-01-07 |
| JPS5649579A (en) | 1981-05-06 |
| IL60250A (en) | 1983-05-15 |
| EP0021774B1 (en) | 1983-05-18 |
| AU534829B2 (en) | 1984-02-16 |
| DE3063300D1 (en) | 1983-07-07 |
| AU549483B2 (en) | 1986-01-30 |
| AU2156883A (en) | 1984-03-29 |
| ES8102420A1 (es) | 1980-12-16 |
| IL60250A0 (en) | 1980-09-16 |
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