JPS6132831B2 - - Google Patents

Info

Publication number
JPS6132831B2
JPS6132831B2 JP52066784A JP6678477A JPS6132831B2 JP S6132831 B2 JPS6132831 B2 JP S6132831B2 JP 52066784 A JP52066784 A JP 52066784A JP 6678477 A JP6678477 A JP 6678477A JP S6132831 B2 JPS6132831 B2 JP S6132831B2
Authority
JP
Japan
Prior art keywords
type
layer
cadmium
cadmium telluride
cathode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP52066784A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5310989A (en
Inventor
Ei Kurogaa Fuaadeinando
Eru Rotsudo Robaato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Monosolar Inc
Original Assignee
Monosolar Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Monosolar Inc filed Critical Monosolar Inc
Publication of JPS5310989A publication Critical patent/JPS5310989A/ja
Publication of JPS6132831B2 publication Critical patent/JPS6132831B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02557—Sulfides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/0256—Selenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02562—Tellurides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • H10F71/1253—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe comprising at least three elements, e.g. HgCdTe
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Hybrid Cells (AREA)
JP6678477A 1976-06-08 1977-06-08 Method of producing electrochemically semiconductor photovoltaic cell and photovoltaic generator Granted JPS5310989A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US69389076A 1976-06-08 1976-06-08

Publications (2)

Publication Number Publication Date
JPS5310989A JPS5310989A (en) 1978-01-31
JPS6132831B2 true JPS6132831B2 (enrdf_load_stackoverflow) 1986-07-29

Family

ID=24786541

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6678477A Granted JPS5310989A (en) 1976-06-08 1977-06-08 Method of producing electrochemically semiconductor photovoltaic cell and photovoltaic generator

Country Status (11)

Country Link
JP (1) JPS5310989A (enrdf_load_stackoverflow)
AU (1) AU513645B2 (enrdf_load_stackoverflow)
BE (1) BE855499A (enrdf_load_stackoverflow)
CA (1) CA1077161A (enrdf_load_stackoverflow)
DE (1) DE2726009A1 (enrdf_load_stackoverflow)
FR (1) FR2354131A1 (enrdf_load_stackoverflow)
GB (1) GB1532616A (enrdf_load_stackoverflow)
IL (1) IL52216A (enrdf_load_stackoverflow)
IT (1) IT1080884B (enrdf_load_stackoverflow)
MX (1) MX145655A (enrdf_load_stackoverflow)
NL (1) NL186611C (enrdf_load_stackoverflow)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2810605C2 (de) * 1978-03-11 1980-03-13 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Elektrolytisches Abscheideverfahren zur Herstellung von großflächigen Halbleiterbauelementen
US4192721A (en) * 1979-04-24 1980-03-11 Baranski Andrzej S Method for producing a smooth coherent film of a metal chalconide
US4345107A (en) * 1979-06-18 1982-08-17 Ametek, Inc. Cadmium telluride photovoltaic cells
US4260427A (en) * 1979-06-18 1981-04-07 Ametek, Inc. CdTe Schottky barrier photovoltaic cell
IL57908A0 (en) * 1979-07-07 1979-11-30 Yeda Res & Dev Photovoltaic materials
US4253919A (en) * 1980-01-21 1981-03-03 The International Nickel Company, Inc. Electrodeposition of cadmium-selenium semiconducting photoelectrodes from an acid citrate bath
US4261802A (en) * 1980-02-21 1981-04-14 Ametek, Inc. Method of making a photovoltaic cell
US4256544A (en) * 1980-04-04 1981-03-17 Bell Telephone Laboratories, Incorporated Method of making metal-chalcogenide photosensitive devices
JPS5714574A (en) * 1980-06-27 1982-01-25 Otsuka Pharmaceut Co Ltd Carbostyril derivative
CA1165016A (en) * 1981-03-16 1984-04-03 Bulent M. Basol Plugged pinhole thin film and method of making same
US4465565A (en) * 1983-03-28 1984-08-14 Ford Aerospace & Communications Corporation CdTe passivation of HgCdTe by electrochemical deposition
US4548681A (en) * 1984-02-03 1985-10-22 The Standard Oil Company (Ohio) Electrodeposition of thin film heterojunction photovoltaic devices that utilize Cd rich Hg1-x Cdx Te
US4611091A (en) * 1984-12-06 1986-09-09 Atlantic Richfield Company CuInSe2 thin film solar cell with thin CdS and transparent window layer
JPS61202478A (ja) * 1985-03-05 1986-09-08 Agency Of Ind Science & Technol 光起電力素子の製造方法
US4977097A (en) * 1986-10-21 1990-12-11 Ametek, Inc. Method of making heterojunction P-I-N photovoltaic cell
US4710589A (en) * 1986-10-21 1987-12-01 Ametek, Inc. Heterojunction p-i-n photovoltaic cell
US5319377A (en) * 1992-04-07 1994-06-07 Hughes Aircraft Company Wideband arrayable planar radiator
DE29706857U1 (de) * 1997-04-16 1997-12-11 Gauss, Edmund, 40668 Meerbusch Stromerzeugungseinheit, u.a. bestehend aus Elektronenüberschuß erzeugender Farbe oder Folie und Stromspeicher
LU91561B1 (en) * 2009-04-30 2010-11-02 Univ Luxembourg Electrical and opto-electrical characterisation oflarge-area semiconductor devices.

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3051636A (en) * 1960-03-30 1962-08-28 Minnesota Mining & Mfg Electrolytic preparation of cadmium salts
US3419484A (en) * 1966-03-23 1968-12-31 Chrysler Corp Electrolytic preparation of semiconductor compounds
NL6618449A (enrdf_load_stackoverflow) * 1966-12-12 1968-07-01
US3573177A (en) * 1968-01-11 1971-03-30 Us Army Electrochemical methods for production of films and coatings of semiconductors
JPS50115486A (enrdf_load_stackoverflow) * 1974-02-20 1975-09-10
US3887446A (en) * 1974-07-26 1975-06-03 Us Navy Electrochemical preparation of metallic tellurides
JPS5138888A (en) * 1974-09-27 1976-03-31 Matsushita Electric Ind Co Ltd Handotaisoshino seizohoho

Also Published As

Publication number Publication date
AU513645B2 (en) 1980-12-11
JPS5310989A (en) 1978-01-31
NL186611C (nl) 1991-01-02
CA1077161A (en) 1980-05-06
BE855499A (fr) 1977-10-03
DE2726009A1 (de) 1977-12-29
IL52216A (en) 1980-01-31
GB1532616A (en) 1978-11-15
NL7706280A (nl) 1977-12-12
FR2354131A1 (fr) 1978-01-06
IL52216A0 (en) 1977-08-31
NL186611B (nl) 1990-08-01
AU2594777A (en) 1978-12-14
MX145655A (es) 1982-03-19
IT1080884B (it) 1985-05-16
FR2354131B1 (enrdf_load_stackoverflow) 1983-01-21

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