GB1525247A - Integrated complementary vertical transistors and method - Google Patents
Integrated complementary vertical transistors and methodInfo
- Publication number
- GB1525247A GB1525247A GB38498/75A GB3849875A GB1525247A GB 1525247 A GB1525247 A GB 1525247A GB 38498/75 A GB38498/75 A GB 38498/75A GB 3849875 A GB3849875 A GB 3849875A GB 1525247 A GB1525247 A GB 1525247A
- Authority
- GB
- United Kingdom
- Prior art keywords
- region
- type
- doped
- regions
- boron
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000000295 complement effect Effects 0.000 title abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 3
- 229910052796 boron Inorganic materials 0.000 abstract 3
- 238000002955 isolation Methods 0.000 abstract 3
- 238000010438 heat treatment Methods 0.000 abstract 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- REDXJYDRNCIFBQ-UHFFFAOYSA-N aluminium(3+) Chemical compound [Al+3] REDXJYDRNCIFBQ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
- 125000004437 phosphorous atom Chemical group 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0826—Combination of vertical complementary transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8222—Bipolar technology
- H01L21/8228—Complementary devices, e.g. complementary transistors
- H01L21/82285—Complementary vertical transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US50757074A | 1974-09-19 | 1974-09-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1525247A true GB1525247A (en) | 1978-09-20 |
Family
ID=24019174
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB38498/75A Expired GB1525247A (en) | 1974-09-19 | 1975-09-19 | Integrated complementary vertical transistors and method |
Country Status (10)
| Country | Link |
|---|---|
| JP (1) | JPS5157172A (de) |
| BE (1) | BE833455A (de) |
| CA (1) | CA1038968A (de) |
| DE (1) | DE2541161A1 (de) |
| ES (1) | ES440909A0 (de) |
| FR (1) | FR2285717A1 (de) |
| GB (1) | GB1525247A (de) |
| IT (1) | IT1042581B (de) |
| NL (1) | NL7510994A (de) |
| SE (1) | SE403214B (de) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55143064A (en) * | 1979-04-24 | 1980-11-08 | Nec Corp | Semiconductor device |
| JPS57106046A (en) * | 1980-12-23 | 1982-07-01 | Toshiba Corp | Manufacture of semiconductor device |
| JPH0713969B2 (ja) * | 1986-01-13 | 1995-02-15 | 三洋電機株式会社 | 縦型ｐｎｐトランジスタ |
| GB2186117B (en) * | 1986-01-30 | 1989-11-01 | Sgs Microelettronica Spa | Monolithically integrated semiconductor device containing bipolar junction,cmosand dmos transistors and low leakage diodes and a method for its fabrication |
| EP0347550A3 (de) * | 1988-06-21 | 1991-08-28 | Texas Instruments Incorporated | Verfahren zur Herstellung von isolierten vertikalen und superverstärkenden Bipolar-Transistoren |
-
1975
- 1975-08-27 CA CA234,241A patent/CA1038968A/en not_active Expired
- 1975-09-10 SE SE7510075A patent/SE403214B/xx unknown
- 1975-09-16 BE BE160072A patent/BE833455A/xx unknown
- 1975-09-16 IT IT27273/75A patent/IT1042581B/it active
- 1975-09-16 DE DE19752541161 patent/DE2541161A1/de not_active Withdrawn
- 1975-09-18 NL NL7510994A patent/NL7510994A/xx not_active Application Discontinuation
- 1975-09-18 JP JP50112210A patent/JPS5157172A/ja active Pending
- 1975-09-18 FR FR7528624A patent/FR2285717A1/fr active Granted
- 1975-09-19 GB GB38498/75A patent/GB1525247A/en not_active Expired
-
1976
- 1976-01-23 ES ES440909A patent/ES440909A0/es active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5157172A (de) | 1976-05-19 |
| ES440909A0 (es) | 1977-03-16 |
| SE403214B (sv) | 1978-07-31 |
| BE833455A (fr) | 1976-01-16 |
| FR2285717A1 (fr) | 1976-04-16 |
| DE2541161A1 (de) | 1976-04-01 |
| SE7510075L (sv) | 1976-03-22 |
| IT1042581B (it) | 1980-01-30 |
| NL7510994A (nl) | 1976-03-23 |
| FR2285717B1 (de) | 1980-04-30 |
| CA1038968A (en) | 1978-09-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4780430A (en) | Process for the formation of a monolithic high voltage semiconductor device | |
| GB1306817A (en) | Semiconductor devices | |
| JP2703798B2 (ja) | Ｎ形半導体材料の基板上に互に絶縁され且つ垂直方向の電流の流れを有するｐｎｐおよびｎｐｎトランジスタを有する集積回路を形成する方法 | |
| US5302534A (en) | Forming a vertical PNP transistor | |
| US4512816A (en) | High-density IC isolation technique capacitors | |
| GB1307546A (en) | Methods of manufacturing semiconductor devices | |
| GB1456376A (en) | Semiconductor devices | |
| US4178190A (en) | Method of making a bipolar transistor with high-low emitter impurity concentration | |
| GB1525247A (en) | Integrated complementary vertical transistors and method | |
| US4167425A (en) | Method for producing lateral bipolar transistor by ion-implantation and controlled temperature treatment | |
| US3635773A (en) | Method of manufacturing a semiconductor device comprising a zener diode and semiconductor device manufactured by using this method | |
| GB1599954A (en) | Semiconductor devices and their fabrication | |
| GB1366892A (en) | Methods of making semiconductor devices | |
| JPH08195399A (ja) | 埋込み層を必要としない絶縁された垂直ｐｎｐトランジスタ | |
| GB1327755A (en) | Methods of manufacturing a semiconductor device | |
| US4136353A (en) | Bipolar transistor with high-low emitter impurity concentration | |
| JPS55165669A (en) | Bipolar-mos device | |
| GB1494149A (en) | Integrated circuits | |
| US5760459A (en) | High performance, high voltage non-epibipolar transistor | |
| GB1270498A (en) | Semiconductor devices | |
| GB1452305A (en) | Methods of forming semiconductor devices | |
| US5925923A (en) | Merged single polysilicon bipolar NPN transistor | |
| US5175117A (en) | Method for making buried isolation | |
| JP2506129B2 (ja) | 半導体装置の製造方法 | |
| JPH0499328A (ja) | バイポーラトランジスタ |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |