BE833455A - Procede de fabrication de transistors monolithiques complementaires, et produits obtenus - Google Patents

Procede de fabrication de transistors monolithiques complementaires, et produits obtenus

Info

Publication number
BE833455A
BE833455A BE160072A BE160072A BE833455A BE 833455 A BE833455 A BE 833455A BE 160072 A BE160072 A BE 160072A BE 160072 A BE160072 A BE 160072A BE 833455 A BE833455 A BE 833455A
Authority
BE
Belgium
Prior art keywords
manufacturing process
products obtained
complementary
transistors
monolithic transistors
Prior art date
Application number
BE160072A
Other languages
English (en)
French (fr)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE833455A publication Critical patent/BE833455A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0826Combination of vertical complementary transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8222Bipolar technology
    • H01L21/8228Complementary devices, e.g. complementary transistors
    • H01L21/82285Complementary vertical transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
BE160072A 1974-09-19 1975-09-16 Procede de fabrication de transistors monolithiques complementaires, et produits obtenus BE833455A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US50757074A 1974-09-19 1974-09-19

Publications (1)

Publication Number Publication Date
BE833455A true BE833455A (fr) 1976-01-16

Family

ID=24019174

Family Applications (1)

Application Number Title Priority Date Filing Date
BE160072A BE833455A (fr) 1974-09-19 1975-09-16 Procede de fabrication de transistors monolithiques complementaires, et produits obtenus

Country Status (10)

Country Link
JP (1) JPS5157172A (de)
BE (1) BE833455A (de)
CA (1) CA1038968A (de)
DE (1) DE2541161A1 (de)
ES (1) ES440909A0 (de)
FR (1) FR2285717A1 (de)
GB (1) GB1525247A (de)
IT (1) IT1042581B (de)
NL (1) NL7510994A (de)
SE (1) SE403214B (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55143064A (en) * 1979-04-24 1980-11-08 Nec Corp Semiconductor device
JPS57106046A (en) * 1980-12-23 1982-07-01 Toshiba Corp Manufacture of semiconductor device
JPH0713969B2 (ja) * 1986-01-13 1995-02-15 三洋電機株式会社 縦型pnpトランジスタ
GB2186117B (en) * 1986-01-30 1989-11-01 Sgs Microelettronica Spa Monolithically integrated semiconductor device containing bipolar junction,cmosand dmos transistors and low leakage diodes and a method for its fabrication
EP0347550A3 (de) * 1988-06-21 1991-08-28 Texas Instruments Incorporated Verfahren zur Herstellung von isolierten vertikalen und superverstärkenden Bipolar-Transistoren

Also Published As

Publication number Publication date
FR2285717A1 (fr) 1976-04-16
DE2541161A1 (de) 1976-04-01
GB1525247A (en) 1978-09-20
SE403214B (sv) 1978-07-31
SE7510075L (sv) 1976-03-22
JPS5157172A (de) 1976-05-19
IT1042581B (it) 1980-01-30
ES440909A0 (es) 1977-03-16
NL7510994A (nl) 1976-03-23
CA1038968A (en) 1978-09-19
FR2285717B1 (de) 1980-04-30

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