GB1519251A - Method of forming coatings on integrated circuit semiconductor devices - Google Patents

Method of forming coatings on integrated circuit semiconductor devices

Info

Publication number
GB1519251A
GB1519251A GB15576/76A GB1557676A GB1519251A GB 1519251 A GB1519251 A GB 1519251A GB 15576/76 A GB15576/76 A GB 15576/76A GB 1557676 A GB1557676 A GB 1557676A GB 1519251 A GB1519251 A GB 1519251A
Authority
GB
United Kingdom
Prior art keywords
integrated circuit
chips
lead frame
semiconductor devices
circuit semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB15576/76A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NCR Voyix Corp
Original Assignee
NCR Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NCR Corp filed Critical NCR Corp
Publication of GB1519251A publication Critical patent/GB1519251A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/042—Coating on selected surface areas, e.g. using masks using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07336—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07531—Techniques
    • H10W72/07532—Compression bonding, e.g. thermocompression bonding
    • H10W72/07533—Ultrasonic bonding, e.g. thermosonic bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/076—Connecting or disconnecting of strap connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5449—Dispositions of bond wires not being orthogonal to a side surface of the chip, e.g. fan-out arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Wire Bonding (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Non-Metallic Protective Coatings For Printed Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
GB15576/76A 1975-05-12 1976-04-15 Method of forming coatings on integrated circuit semiconductor devices Expired GB1519251A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/576,517 US4041896A (en) 1975-05-12 1975-05-12 Microelectronic circuit coating system

Publications (1)

Publication Number Publication Date
GB1519251A true GB1519251A (en) 1978-07-26

Family

ID=24304755

Family Applications (1)

Application Number Title Priority Date Filing Date
GB15576/76A Expired GB1519251A (en) 1975-05-12 1976-04-15 Method of forming coatings on integrated circuit semiconductor devices

Country Status (8)

Country Link
US (1) US4041896A (enExample)
JP (1) JPS51135471A (enExample)
CA (1) CA1059648A (enExample)
DE (1) DE2620707C3 (enExample)
FR (1) FR2311404A1 (enExample)
GB (1) GB1519251A (enExample)
IT (1) IT1060415B (enExample)
NL (1) NL7604980A (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4401053A (en) * 1981-07-17 1983-08-30 Riley Thomas J Coating fixture

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2704992A (en) * 1951-12-28 1955-03-29 Erie Resistor Corp Gas plating apparatus
US2879188A (en) * 1956-03-05 1959-03-24 Westinghouse Electric Corp Processes for making transistors
US3117025A (en) * 1961-08-31 1964-01-07 Space Technology Lab Inc Thin filming apparatus
NL284295A (enExample) * 1961-10-12 1900-01-01
US3207126A (en) * 1961-11-14 1965-09-21 Byron Ernest Mask changer means for vacuum deposition device
US3312572A (en) * 1963-06-07 1967-04-04 Barnes Eng Co Process of preparing thin film semiconductor thermistor bolometers and articles
US3276423A (en) * 1963-10-04 1966-10-04 David P Triller Pattern mask for use in making thin film circuitry
US3465209A (en) * 1966-07-07 1969-09-02 Rca Corp Semiconductor devices and methods of manufacture thereof
FR1518843A (fr) * 1967-02-13 1968-03-29 Radiotechnique Coprim Rtc Dispositif pour le dépôt de couches minces sur des supports semi-conducteurs
US3597834A (en) * 1968-02-14 1971-08-10 Texas Instruments Inc Method in forming electrically continuous circuit through insulating layer
US3621812A (en) * 1969-06-18 1971-11-23 Texas Instruments Inc Epitaxial deposition reactor
US3647533A (en) * 1969-08-08 1972-03-07 Us Navy Substrate bonding bumps for large scale arrays
US3785046A (en) * 1970-03-06 1974-01-15 Hull Corp Thin film coils and method and apparatus for making the same
US3678892A (en) * 1970-05-19 1972-07-25 Western Electric Co Pallet and mask for substrates

Also Published As

Publication number Publication date
FR2311404B1 (enExample) 1979-03-02
US4041896A (en) 1977-08-16
DE2620707B2 (de) 1978-09-21
IT1060415B (it) 1982-08-20
NL7604980A (nl) 1976-11-16
JPS51135471A (en) 1976-11-24
CA1059648A (en) 1979-07-31
DE2620707A1 (de) 1976-11-18
DE2620707C3 (de) 1979-05-23
FR2311404A1 (fr) 1976-12-10

Similar Documents

Publication Publication Date Title
ES457595A1 (es) Procedimiento para la formacion de recubrimientos metalicos o de compuesto metalico sobre una cara de un sustrato de vidrio.
SE8403834L (sv) Kemisk angavsettning av titannitrid och liknande filmer
KR920007116A (ko) 내층 절연막 형성방법
JPS5559729A (en) Forming method of semiconductor surface insulating film
GB956306A (en) A method for producing extremely pure silicon or germanium
GB1306988A (en) Reaction vessels for the preparation of semiconductor devices
KR920008876A (ko) Cvd실리콘 산화질화막의 제조방법
GB1519251A (en) Method of forming coatings on integrated circuit semiconductor devices
ES461297A1 (es) Un metodo de formacion de un articulo de nitruro de silicio.
GB1402274A (en) process for degassing liquid sulphur
GB1207748A (en) DOUBLE DEPOSITIONS OF BBr3, IN SILICON
GB1394380A (en) Method for splicing compound superconductors
GB1449789A (en) Method of growing pyrolytic silicon dioxide layers
JPS5232269A (en) Hermetic sealing method of semiconductor devices
JPS5325604A (en) Gasification of thermal decomposition residues and its apparatus
JPS6414927A (en) Forming method of silicon nitride film or silicon oxynitride film
JPS567453A (en) Manufacture of semiconductor device
JPS5423472A (en) Manufacture for semiconductor device
JPS549582A (en) Sealing method of semiconductor device
JPS52127065A (en) Gas phase growing method of semiconductor and its device
JPS57129818A (en) Formation of silicon dioxide film
JPS5766328A (en) Semiconductor pressure sensor
KR970048923A (ko) 반도체 소자의 선택적 산화 마스크 제조 방법
JPS52149548A (en) Shaft sealing device
JPS5642350A (en) Formation of insulating film

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee