DE2620707B2 - Vorrichtung zur Herstellung eines Überzuges auf einer integrierten Halbleiterschaltung - Google Patents

Vorrichtung zur Herstellung eines Überzuges auf einer integrierten Halbleiterschaltung

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Publication number
DE2620707B2
DE2620707B2 DE2620707A DE2620707A DE2620707B2 DE 2620707 B2 DE2620707 B2 DE 2620707B2 DE 2620707 A DE2620707 A DE 2620707A DE 2620707 A DE2620707 A DE 2620707A DE 2620707 B2 DE2620707 B2 DE 2620707B2
Authority
DE
Germany
Prior art keywords
semiconductor circuit
coating
producing
tubes
integrated semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE2620707A
Other languages
English (en)
Other versions
DE2620707A1 (de
DE2620707C3 (de
Inventor
Tuh-Kai Colorado Springs Col. Koo
Armand Joseph Antoine Van West Carrollton Ohio Velthoven
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NCR Voyix Corp
Original Assignee
NCR Corp
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Publication date
Application filed by NCR Corp filed Critical NCR Corp
Publication of DE2620707A1 publication Critical patent/DE2620707A1/de
Publication of DE2620707B2 publication Critical patent/DE2620707B2/de
Application granted granted Critical
Publication of DE2620707C3 publication Critical patent/DE2620707C3/de
Expired legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/042—Coating on selected surface areas, e.g. using masks using masks
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  • Lead Frames For Integrated Circuits (AREA)
  • Wire Bonding (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
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  • Non-Metallic Protective Coatings For Printed Circuits (AREA)

Description

Die Erfindung betrifft eine Vorrichtung zur Herstellung eines Überzuges auf einer integrierten Halbleiterschaltung mit einer Maskenanordnung zum Abdecken von nicht zu beschichtenden Bereichen.
Allgemein bekannte Verfahren zur Erzeugung von Überzügen enthalten häufig einen Herstellungsschritt, bei dem eine Halbleitervorrichtung in einer gasförmigen Atmosphäre aufgeheizt wird, um eine Schicht aus festem anorganischen Material, z. B. aus Siliciumdioxid oder Siliciumnitrid, auf der Oberfläche einer Halbleitervorrichtung aufzubringen. Dies geschieht entweder durch Reaktion des Gases mit der Materialoberfläche (Silicium) oder durch Reaktion zweier Komponenten eines Gasgemisches, z. B. aus Silan und Sauerstoff, auf der beheizten Oberfläche.
Aus der Zeitschrift »Elektronik«, 17. Jahrgang (1968), Heft 5, Seiten 143 bis 146 ist es bereits bekannt, bewegliche Masken auf Substraten anzuordnen, die auf bestimmten Bereichen mit Beschichtungen versehen werden sollen. Diese Masken weisen den Nachteil auf, daß zusätzliche Mittel und Geräte zum Abtransport von gasförmigen Substanzen erforderlich sind.
Es ist deshalb die Aufgabe der Erfindung, eine Vorrichtung aufzuzeigen, mit der auf einfache und exakte Weise eine Beschichtung ausgewählter Bereiche möglich ist und die gleichzeitig Mittel zum Absaugen von Gasen aufweist.
Diese Aufgabe wird dadurch gelöst, daß die Maskenanordnung aus zwei im Abstand ineinanderliegende Röhren besteht, von denen die eine, innere Röhre in der anderen, äußeren Röhre angeordnet ist, wobei die innere Röhre der Zuführung der gasförmigen Atmosphäre, die äußere, auf die Oberfläche der integrierten Halbleiterschaltung aufzusetzende Röhre der Abdekkung der nicht zu beschichtenden Bereiche und der
Raum zwischen den Röhren der Abführung der gasförmigen Atmosphäre dient.
Im folgenden wird ein erfindungsgemäßes Ausführungsbeispiel beschrieben, wobei auf die Zeichnung Bezug genommen wird.
Die Zeichnung nach der Figur zeigt im Schnitt eine vergrößerte Darstellung eines Teils einer Halbleiterschaltung und einer Maskenanordnung.
Auf einer Heizplatte 10 in der Figur ist eine Halbleiterschaltung 11 angeordnet, die Chips 14 und 15 enthält. Die Chips 14 und 15 sind jeweils auf einem Trägersubstratbereich 17 und 18 angeordnet Mit den Chips 14 und 15 sind elektrische Zuleitungen in Form von Leiterbahnen 32,37,42 und 47 über Leitungsdrähte 94, 98, 100, 101 und 95, 99, 102, 103 verbunden. Die Vorrichtung enthält Gaszuführungs- und -ableitungsröhren, die jeweils allgemein mit 85 und 86 bezeichnet werden, und die jeweils über einem der Chips 14 bzw. 15 angeordnet sind. Die Gaszuführungs- und -ableitungsröhren 85 bestehen aus einer äußeren Röhre 90, die ein erweitertes Ende 92 aufweist, das über die ausgewählten, mit einem Überzug zu versehenen Teile, aufgesetzt ist Eine innere, konzentrisch in der äußeren Röhre 90 angeordnete Röhre 96 ist von der äußeren Röhre 90 beabstandet, so daß zwischen den beiden Röhren 90 und 96 ein Abführungsweg für die gasförmige Atmosphäre entsteht Ähnlich sind die Gaszuführungs- und -ableitungsröhren 86 angeordnet, die aus einer äußeren Röhre 91 mit einem erweiterten Ende 93 und einer in dieser konzentrisch angeordneten inneren Röhre 97 bestehen.
Die Gaszuführungs- und -ableitungsröhren 86 sind mit; dem erweiteren Ende 93 auf einen ausgewählten Bereich der Halbleiterschaltung 11 aufgesetzt.
Nachdem jeweils die Halbleiterschaltung 11 auf der Heizplatte 10 und die Gaszuführungs- und -ableitungsröhren 85 und 86 über den Chips 14 und 15 positioniert sind, wird die gesamte Anordnung auf mindestens 35O0C erhitzt und anschließend eine Mischung aus Sauerstoff, Silan und einem Trägergas, z. B. Stickstoff, durch die inneren Röhren 96 und 97 auf die ausgewählten Bereiche, die durch die Enden 92 und 93 abgedeckt sind, geleitet. Schichten aus Siliciumdioxid 98 und 99 werden dann über den Chips 14 und 15 und über den entsprechenden diesen zugeordneten Verbindungsdräh-
ten abgelagert. Die Dicke der Siliciumdioxidschicht beträgt etwa 1 μίτι. Das abgesaugte Gas einschließlich anderer Produkte, die durch die chemische Ablagerung der Siliciumdioxidschicht entstanden, werden durch den zwischen den inneren Röhren 96 bzw. 97 und den äußeren Röhren 90 bzw. 91 gebildeten Raum abgesaugt. Die Enden 92 und 93 dienen zur Abdeckung jener Bereiche der Vorrichtung, die außerhalb der nicht zu beschichtenden Bereiche liegen, so daß das Gasgemisch nur auf die ausgewählten Bereiche gelangt und somit verhindert wird, daß unerwünschte Beschichtungen entstehen. Eine Kühlvorrichtung 105 ist um die äußere Röhre 90 und eine Kühlvorrichtung 106 um die äußere Röhre 91 zur Kühlung des abgesaugten Gases angeordnet Diese Kühlvorrichtungen 105 und 106 können jeweils aus schraubenförmiggewundenen Kühlröhren bestehen.
Hierzu 1 Blatt Zeichnungen

Claims (2)

Patentansprüche:
1. Vorrichtung zur Herstellung eines Überzuges auf einer integrierten Halbleiterschaltung mit einer Maskenanordnung zum Abdecken von nicht zu beschichtenden Bereichen, dadurch gekennzeichnet, daß die Maskenanordnung aus zwei mit Abstand ineinanderliegenden Röhren (90,91,96, 97) besteht, von denen die eine, innere Röhre (96,97) in der anderen, äußeren Röhre (90, 91) angeordnet ist, wobei die innere Röhre (96, 97) der Zuführung der gasförmigen Atmosphäre, die äußere, auf die Oberfläche der integrierten Halbleiterschaltung aufzusetzende Röhre (90, 91) der Abdeckung der nicht zu beschichtenden Bereiche und der Raum zwischen den Röhren (90,91; 96,97) der Abführung der gasförmigen Atmosphäre dient.
2. Vorrichtung nach Anspruch 1, dadurch gekennzeichnet, daß die äußere Röhre (90, 91) eine Kühlvorrichtung (105, 106) zur Kühlung des abgesaugten Gases enthält.
DE2620707A 1975-05-12 1976-05-11 Vorrichtung zur Herstellung eines Überzuges auf einer integrierten Halbleiterschaltung Expired DE2620707C3 (de)

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US05/576,517 US4041896A (en) 1975-05-12 1975-05-12 Microelectronic circuit coating system

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DE2620707B2 true DE2620707B2 (de) 1978-09-21
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JP (1) JPS51135471A (de)
CA (1) CA1059648A (de)
DE (1) DE2620707C3 (de)
FR (1) FR2311404A1 (de)
GB (1) GB1519251A (de)
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US4401053A (en) * 1981-07-17 1983-08-30 Riley Thomas J Coating fixture

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US2704992A (en) * 1951-12-28 1955-03-29 Erie Resistor Corp Gas plating apparatus
US2879188A (en) * 1956-03-05 1959-03-24 Westinghouse Electric Corp Processes for making transistors
US3117025A (en) * 1961-08-31 1964-01-07 Space Technology Lab Inc Thin filming apparatus
BE623233A (de) * 1961-10-12 1900-01-01
US3207126A (en) * 1961-11-14 1965-09-21 Byron Ernest Mask changer means for vacuum deposition device
US3312572A (en) * 1963-06-07 1967-04-04 Barnes Eng Co Process of preparing thin film semiconductor thermistor bolometers and articles
US3276423A (en) * 1963-10-04 1966-10-04 David P Triller Pattern mask for use in making thin film circuitry
US3465209A (en) * 1966-07-07 1969-09-02 Rca Corp Semiconductor devices and methods of manufacture thereof
FR1518843A (fr) * 1967-02-13 1968-03-29 Radiotechnique Coprim Rtc Dispositif pour le dépôt de couches minces sur des supports semi-conducteurs
US3597834A (en) * 1968-02-14 1971-08-10 Texas Instruments Inc Method in forming electrically continuous circuit through insulating layer
US3621812A (en) * 1969-06-18 1971-11-23 Texas Instruments Inc Epitaxial deposition reactor
US3647533A (en) * 1969-08-08 1972-03-07 Us Navy Substrate bonding bumps for large scale arrays
US3785046A (en) * 1970-03-06 1974-01-15 Hull Corp Thin film coils and method and apparatus for making the same
US3678892A (en) * 1970-05-19 1972-07-25 Western Electric Co Pallet and mask for substrates

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US4041896A (en) 1977-08-16
NL7604980A (nl) 1976-11-16
FR2311404A1 (fr) 1976-12-10
GB1519251A (en) 1978-07-26
JPS51135471A (en) 1976-11-24
CA1059648A (en) 1979-07-31
DE2620707A1 (de) 1976-11-18
DE2620707C3 (de) 1979-05-23
IT1060415B (it) 1982-08-20
FR2311404B1 (de) 1979-03-02

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