GB1496306A - Semiconductor integrated circuit including an epitaxial base type vertical transistor - Google Patents

Semiconductor integrated circuit including an epitaxial base type vertical transistor

Info

Publication number
GB1496306A
GB1496306A GB16301/76A GB1630176A GB1496306A GB 1496306 A GB1496306 A GB 1496306A GB 16301/76 A GB16301/76 A GB 16301/76A GB 1630176 A GB1630176 A GB 1630176A GB 1496306 A GB1496306 A GB 1496306A
Authority
GB
United Kingdom
Prior art keywords
regions
integrated circuit
vertical transistor
semiconductor integrated
circuit including
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB16301/76A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Publication of GB1496306A publication Critical patent/GB1496306A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/67Complementary BJTs
    • H10D84/673Vertical complementary BJTs
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/761PN junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
GB16301/76A 1975-04-22 1976-04-22 Semiconductor integrated circuit including an epitaxial base type vertical transistor Expired GB1496306A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50048189A JPS51123577A (en) 1975-04-22 1975-04-22 Semiconductor integrating circuit including epitaxial base typ vertica l directional transistor

Publications (1)

Publication Number Publication Date
GB1496306A true GB1496306A (en) 1977-12-30

Family

ID=12796429

Family Applications (1)

Application Number Title Priority Date Filing Date
GB16301/76A Expired GB1496306A (en) 1975-04-22 1976-04-22 Semiconductor integrated circuit including an epitaxial base type vertical transistor

Country Status (5)

Country Link
JP (1) JPS51123577A (enrdf_load_stackoverflow)
DE (1) DE2617521A1 (enrdf_load_stackoverflow)
FR (1) FR2309040A1 (enrdf_load_stackoverflow)
GB (1) GB1496306A (enrdf_load_stackoverflow)
IT (1) IT1058177B (enrdf_load_stackoverflow)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1101096B (it) * 1978-12-22 1985-09-28 Ates Componenti Elettron Perfezionamento al procedimento per produrre dispositivi integrati a semiconduttore e prodotto risultante
JPS5917409A (ja) * 1982-07-21 1984-01-28 Nissan Motor Co Ltd 搬送用ハンガ−
JPS6377144A (ja) * 1986-09-19 1988-04-07 Sanyo Electric Co Ltd 半導体集積回路
JP2835116B2 (ja) * 1989-09-29 1998-12-14 株式会社東芝 電力用icおよびその製造方法
JP3653963B2 (ja) * 1997-12-25 2005-06-02 ソニー株式会社 半導体装置およびその製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4841675A (enrdf_load_stackoverflow) * 1971-09-28 1973-06-18
JPS4842685A (enrdf_load_stackoverflow) * 1971-09-30 1973-06-21
JPS5942463B2 (ja) * 1972-09-22 1984-10-15 ソニー株式会社 半導体集積回路装置

Also Published As

Publication number Publication date
DE2617521A1 (de) 1976-11-04
IT1058177B (it) 1982-04-10
FR2309040B1 (enrdf_load_stackoverflow) 1979-01-12
JPS51123577A (en) 1976-10-28
FR2309040A1 (fr) 1976-11-19

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
746 Register noted 'licences of right' (sect. 46/1977)
PE20 Patent expired after termination of 20 years

Effective date: 19960421