GB1490798A - Method for diffusing impurities in a substrate - Google Patents

Method for diffusing impurities in a substrate

Info

Publication number
GB1490798A
GB1490798A GB695875A GB695875A GB1490798A GB 1490798 A GB1490798 A GB 1490798A GB 695875 A GB695875 A GB 695875A GB 695875 A GB695875 A GB 695875A GB 1490798 A GB1490798 A GB 1490798A
Authority
GB
United Kingdom
Prior art keywords
layer
dopant
diffusion
substrate
feb
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB695875A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Silec Semi Conducteurs SA
Original Assignee
Silec Semi Conducteurs SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Silec Semi Conducteurs SA filed Critical Silec Semi Conducteurs SA
Publication of GB1490798A publication Critical patent/GB1490798A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Formation Of Insulating Films (AREA)
GB695875A 1974-02-20 1975-02-19 Method for diffusing impurities in a substrate Expired GB1490798A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7405790A FR2270677B1 (US06811534-20041102-M00003.png) 1974-02-20 1974-02-20

Publications (1)

Publication Number Publication Date
GB1490798A true GB1490798A (en) 1977-11-02

Family

ID=9135195

Family Applications (1)

Application Number Title Priority Date Filing Date
GB695875A Expired GB1490798A (en) 1974-02-20 1975-02-19 Method for diffusing impurities in a substrate

Country Status (5)

Country Link
BE (1) BE825484A (US06811534-20041102-M00003.png)
DE (1) DE2507344A1 (US06811534-20041102-M00003.png)
FR (1) FR2270677B1 (US06811534-20041102-M00003.png)
GB (1) GB1490798A (US06811534-20041102-M00003.png)
IT (1) IT1031868B (US06811534-20041102-M00003.png)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4050967A (en) * 1976-12-09 1977-09-27 Rca Corporation Method of selective aluminum diffusion
GB2009497B (en) * 1977-10-26 1982-06-30 Tokyo Shibaura Electric Co Method for manufacturing a semiconductor device

Also Published As

Publication number Publication date
FR2270677B1 (US06811534-20041102-M00003.png) 1978-12-01
DE2507344A1 (de) 1975-08-21
BE825484A (fr) 1975-08-13
IT1031868B (it) 1979-05-10
FR2270677A1 (US06811534-20041102-M00003.png) 1975-12-05

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee