GB1479113A - Thyristors - Google Patents

Thyristors

Info

Publication number
GB1479113A
GB1479113A GB31819/75A GB3181975A GB1479113A GB 1479113 A GB1479113 A GB 1479113A GB 31819/75 A GB31819/75 A GB 31819/75A GB 3181975 A GB3181975 A GB 3181975A GB 1479113 A GB1479113 A GB 1479113A
Authority
GB
United Kingdom
Prior art keywords
emitter
zone
regions
diameter
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB31819/75A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of GB1479113A publication Critical patent/GB1479113A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0839Cathode regions of thyristors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
GB31819/75A 1974-08-13 1975-07-30 Thyristors Expired GB1479113A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2438894A DE2438894C3 (de) 1974-08-13 1974-08-13 Thyristor mit Kurzschlußemitter

Publications (1)

Publication Number Publication Date
GB1479113A true GB1479113A (en) 1977-07-06

Family

ID=5923126

Family Applications (1)

Application Number Title Priority Date Filing Date
GB31819/75A Expired GB1479113A (en) 1974-08-13 1975-07-30 Thyristors

Country Status (6)

Country Link
JP (1) JPS5530309B2 (el)
CA (1) CA1038084A (el)
DE (1) DE2438894C3 (el)
FR (1) FR2282167A1 (el)
GB (1) GB1479113A (el)
SE (1) SE409260B (el)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2945347A1 (de) * 1979-11-09 1981-05-21 Siemens AG, 1000 Berlin und 8000 München Thyristor mit hilfsemitterelektrode und verfahren zu seinem betrieb
DE3017584C2 (de) * 1980-05-08 1982-12-23 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg Thyristor
DE3018499A1 (de) * 1980-05-14 1981-11-19 Siemens AG, 1000 Berlin und 8000 München Halbleiterbauelement
DE3112942A1 (de) * 1981-03-31 1982-10-07 Siemens AG, 1000 Berlin und 8000 München Thyristor und verfahren zu seinem betrieb
DE3917769A1 (de) * 1989-05-31 1990-12-06 Siemens Ag Thyristor mit emitter-nebenschluessen

Also Published As

Publication number Publication date
DE2438894B2 (de) 1978-06-22
DE2438894C3 (de) 1979-02-22
JPS5530309B2 (el) 1980-08-09
CA1038084A (en) 1978-09-05
JPS5144482A (el) 1976-04-16
SE409260B (sv) 1979-08-06
FR2282167B1 (el) 1980-07-18
SE7509089L (sv) 1976-02-16
DE2438894A1 (de) 1976-02-26
FR2282167A1 (fr) 1976-03-12

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee