CA1038084A - Thyristor with shorted emitter - Google Patents
Thyristor with shorted emitterInfo
- Publication number
- CA1038084A CA1038084A CA233,090A CA233090A CA1038084A CA 1038084 A CA1038084 A CA 1038084A CA 233090 A CA233090 A CA 233090A CA 1038084 A CA1038084 A CA 1038084A
- Authority
- CA
- Canada
- Prior art keywords
- emitter
- zone
- shorts
- thyristor
- emitter zone
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 4
- 238000010304 firing Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 230000007423 decrease Effects 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 2
- 239000002674 ointment Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 241000863814 Thyris Species 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0839—Cathode regions of thyristors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Abstract
ABSTRACT OF THE DISCLOSURE
A thyristor device is provided with a shorted emitter structure which produces improved electrical char-acteristics, and specifically an improved dv/dt behavior.
The improved electrical characteristics are achieved by controlling the relative placement of the shorts in the emitter and the diameter of the shorts.
A thyristor device is provided with a shorted emitter structure which produces improved electrical char-acteristics, and specifically an improved dv/dt behavior.
The improved electrical characteristics are achieved by controlling the relative placement of the shorts in the emitter and the diameter of the shorts.
Description
BACKGROUND OF THE INVENTION
Field of the Invention:
The present invention relates to four region semi-conductor switching devices and more particularly to fast switching thyristors.
Description of the Prior Art:
Four region semiconductor switching devices, known as thyristors, have previously been constructed with shorted emitters. It is known to construct a thyristor with a semi-conducting body having at least one external emitter zone and an adjacent base zone which is electrically connected with an emitter electrode associated with the emitter zone via a plurality of shorts located in the emitter zone.
The purpose Or the above-mentioned short~ is to improve the dv/dt behavior o~ the thyristor. ~he ~mprovement , in the dv/dt behavior occurs since part of the electrons flowing to khe emitter 7one, on the application of a voltage to the khyristor, flow directly to the emitter electrode via the shorts without giving rise to an emission of charge carriers from the emitter zone. On firing, or triggering, with an applied voltage, an emission of charge carriers from the emitter zone sets in at higher dv/dt values in the case of thyristors with a shorted emitter area~ than in thyristors ~,,.
~38~
with a small shorted emitter area. At the same time, there is an increase in the value of the thyristor current at which the thyristor is switched over to the conducting state without a fed-in control current. This current is termed the "break-over current" i(b)-In order to improve the dv/dt behavior or to in-crease the value of the current i(bo), the shorted area can be increased, for example, by increasing the diameter of the short. However, the shorts cause a hindrance for the propagation o~ the firing process emanating from the emitter edge adJacent the control electrode. As a result, the spread of the firing process is strongly restrained by increasing the shorted area. In addikiorl, the volta~e drop ln the f'orward (cond~lctlng) direction o~ the thyri~tor wou:Ld bocom~
relatively high on account of the relatively small ignltable area.
The basic task of the invention is to improve a thyristor of the above-mentioned type in such a way that khe dv/dt behavior is improved, the current i(b) is increased, and the turn-off time is reduced without raising the forward voltage or appreciably impairing the spread o~ the firing process.
The present invention is based on the fact that these objectives can be achieved via a scaling down of the shorted emitter, that is, by a size reduction and an increase in the shorts at a constant ratio of short diameter to the distance of the shorts from each other.
The invention is characterized by the fact that the shorts have a diameter "d" of ~ 60 ~m, and by the fact that the ratio of the distance "a" between two adjacent ~.' ~38~3~34 shorts to their diameter is > 3.
A thyristor has already been described in the prior art in which the diameter of the shorts lies between 5 and 15 ~m. However, nothing is said concerning the dis-tance between two neighboring shorts. A thyristor has also been described for which not only i.s the diameter of the shorts given, but also their spacing. In this case, however, the diameters of the shorts lie between 100 and 200 ~Um and the distance between them is about 1 mm.
SUMMARY OF THE INVENTION
~ he invention pertains to a thyristor device com-prising a body of semiconductor material and electrical contact means; said body of semiconductor materlal i~ com-prised o~ zones of alternate semiconductlv:lty disposed in PN Junction forming relationships, an emitter zone of a first type of semiconductivity disposed at a top surface of the body, a base zone of a s~cond type of semiconductivity dis-posed in the body beneath the emitter zone, a plurality of small base portions of said second type of semiconductivity disposed in the emitter zone adjoining the base zone and extending from the base zone through the emitter zone to the top surface of the body, said small base portions forming circular shaped areas of a preferred diarneter at the top surface of the body, said circular shaped areas having centers located at preferred points on the surface of the body such that the centers of adJacent clrcular shaped areas are separated by a like distance, a ratio of said like dis-tance to said preferred diameter being greater than about 3;
said electrical contact means comprislng an emitter electrode affixed to the top surface of the body, said ernitter elec-~L~380~34 trode electrically contacting both the emitter zone and the circular shaped areas o~ said small base portions.
BRIEF DESCRIPTION OF THE DRAWINGS
Figure 1 presents a plan-view o~ part o~ a thyristor device;
~ ig. 2 shows, ln enlarged cross-section, part o~
the device shown in Fig. 1 taken along the line II-II; and, Fig. 3 shows a graph in which is plotted the current i(b) as a ~unction of the distance between the shorts, with the ratio (a/d) o~ such distance to the diameter of the shorts as a paramet,er.
D~SCRIPTION OF TH~ PR~ER~ED ~M~ODI~NT
The invention will now be expl~:Lncd in dctai~ on the basis o~ a prackical example in associatlon with appended drawings 1 to 3.
In ~ig. 1 a body 1 of semlconductor material com-prising a portion o~ a thyristor is provided with an emltter electrode 2 which is electrically connected with an emitter zone 5 of N-type semiconductivity in the body 1. An adjacent base zone 4 Or P-type semiconductivity lies below emitter zone 5, and is electrically connected with a control electrode 3. In emitter zone 5 are provided shorts 6 of P-type semi-conductivity which, in the example o~ this embodiment, ~orm :: ~
a concentric circle around control electrode 3. However, shorts 6 can be arranged in other ways. The base zone 4 iS
electrically connected to emitter electrode 2 via shorts 6.
The distance between any two adjacent shorts 6 is denoted by a, and the diameters o~ the shorts by d.
~ ig. 2 illustrates how the diameter d o~ the short circuits 6 has an influence on the dv/dt behavior and on the _LI_ current i(bo). This figure illustrates, on an enlarged scale, a portion of the thyristor device of Fig. 1 along the line II-II. Parts which are the same as in ~ig. 1 are given by the same identifying numbers. In Fig. 2, anode electrode 7 is affi~ed to anode emitter region 9. If a voltage of the polariky shown is applied to electrodes 2 and 7 of ~he thyristor, a current builds up whose ~low corresponds to that indicated by the arrows. Starting essen-tially ~rom the base zone 6, this current flows in an axial direction to the emitter electrode 2. It then ~lows under the emitter zone 5 on accQunt o~ the highest dop:ln~ in that locality, the current :~lowing in a latera~ direct~.on to ~he short 6 and ~rom there into th~ emlttcr electrode 2. ~h:ls current produces a voltage drop below emitter zone 5 which, referred to the potential o~ emitter electrode 2, is greatest on the outer periphery 8 o~ emitter zone 5. The thyristor will fire at this place if the voltage drop exceeds a speci-fied value which, for silicon thyristors, is about o.4v.
If the diameter of short 6 is made larger, the voltage drop under emitter zone 5 will decrease on account of the lateral current density decreasing with increasing circumference of the short. As a result, the dv/dt behavior actually improves and the current i(b) increases. However, the spread of the firing becomes appreciably slower and the forward voltage rises. I~ the diameter o~ the shorts 6 wer~ reduced, the spread of the ~iring would be less adversely af~ected and the forward voltage of the thyristor would drop accordingly, but the dv/dt behavior would be poorer and the current i(bo) would be smaller.
Optimum dv/dt properties, larger i(b) currents and simultaneously good firing propagation and low forward voltage are attainable along with a fast turn-off time when the diameter of each short is made _ 60 ~lm, and when the ratio of the distance between the centers of two adjacent shorts to the:lr diameter is = 3.
The graph presented ln Fig. 3 shows the relation-ship between the current i(b), which is also a measure o~
the dv/dt characteristics, as a f'unction of' the distance between the shorts, the ratio of the distance between the shorts to their diameter being used as a parameter. :[t can be seen that, f'or decre~sing values of' the distance between the shorts with a constant dlstance to ~iametcr ratlo, the current i(bo) remains constant as the distance "a" decreases.
It is f'urther evident that the current i(bo) decreases f`or larger values of' a/d. Thus, the current i(bo) is conslderably higher f'or the ratio a/d = 7 than for the ratio a/d = 20.
It does not seem reasonable to go below the radio a/d = 3 because the shor~ed emitter area will already be about 10%.
The utilization of the thyristor area would then become very poor.
The lower signif'icant limit of the diameters of' the shorts is set by the transition of' the curves to the horizontal. It is advisable to ef`f'ect the doping of the emitter zone and the shorts by the known ion implantation methods followed by di~usion. By this means, it ls possible to obtain a homogeneous emitter zone in the lateral direction which has an additional positive eff'ect on the uniformity o~ the f'iring operation. Consec~uently, with the presently employed photo-masking technique, it is advisable to make the lower value o~ the diameter of the shorts larger than ~1038Vi~4 the thickness of the N-type emitter zone.
On the other hand the lower practical meaningful diameter is set by the technology employed in producing the emitter and the shorts. For example on account o~ the all-round spread o~ the diffusion front, as well as under the masks ~or the shorts, lt ls very di~lcult to produce short circuits with diameters whlch are smaller than the depth o~
penetration o~ the emitters.
It should also be appreclated that the diagram 5~
-~we~ in ~ig. 3 applies to a certain doplng profile ln the base zone. For steeper pro~les, ~or example, the values Or the current i(bo) change in the dlrect~on which makes the current i(bo) lower in the rallln~ part o~ the curve.
Wlth the invention, better characterlstics are obtained by comparison with previously known thyristors ~or the same parameters for diameter and distance between shorts.
Thus, for example, with a conventional type Or thyristor with a blocking voltage o~ about 2000 V, short diameters o~
300 ~m and distances between shorts of 2 mm, a maximum dv/dt of 500 V/~s was measured, whereas with a thyristor having the same construction, but with short diameters o~
20 ~Am and short-to-short distances of 250 ~m, a maximum dv/dt o~ about 5000 V/~s was attained. In addition, the turn-off time was lower by a ~actor o~ 3, the forward voltage was about the same, and the :~irlng propagation speed was only about 30% below the value for conventional thyristors.
Field of the Invention:
The present invention relates to four region semi-conductor switching devices and more particularly to fast switching thyristors.
Description of the Prior Art:
Four region semiconductor switching devices, known as thyristors, have previously been constructed with shorted emitters. It is known to construct a thyristor with a semi-conducting body having at least one external emitter zone and an adjacent base zone which is electrically connected with an emitter electrode associated with the emitter zone via a plurality of shorts located in the emitter zone.
The purpose Or the above-mentioned short~ is to improve the dv/dt behavior o~ the thyristor. ~he ~mprovement , in the dv/dt behavior occurs since part of the electrons flowing to khe emitter 7one, on the application of a voltage to the khyristor, flow directly to the emitter electrode via the shorts without giving rise to an emission of charge carriers from the emitter zone. On firing, or triggering, with an applied voltage, an emission of charge carriers from the emitter zone sets in at higher dv/dt values in the case of thyristors with a shorted emitter area~ than in thyristors ~,,.
~38~
with a small shorted emitter area. At the same time, there is an increase in the value of the thyristor current at which the thyristor is switched over to the conducting state without a fed-in control current. This current is termed the "break-over current" i(b)-In order to improve the dv/dt behavior or to in-crease the value of the current i(bo), the shorted area can be increased, for example, by increasing the diameter of the short. However, the shorts cause a hindrance for the propagation o~ the firing process emanating from the emitter edge adJacent the control electrode. As a result, the spread of the firing process is strongly restrained by increasing the shorted area. In addikiorl, the volta~e drop ln the f'orward (cond~lctlng) direction o~ the thyri~tor wou:Ld bocom~
relatively high on account of the relatively small ignltable area.
The basic task of the invention is to improve a thyristor of the above-mentioned type in such a way that khe dv/dt behavior is improved, the current i(b) is increased, and the turn-off time is reduced without raising the forward voltage or appreciably impairing the spread o~ the firing process.
The present invention is based on the fact that these objectives can be achieved via a scaling down of the shorted emitter, that is, by a size reduction and an increase in the shorts at a constant ratio of short diameter to the distance of the shorts from each other.
The invention is characterized by the fact that the shorts have a diameter "d" of ~ 60 ~m, and by the fact that the ratio of the distance "a" between two adjacent ~.' ~38~3~34 shorts to their diameter is > 3.
A thyristor has already been described in the prior art in which the diameter of the shorts lies between 5 and 15 ~m. However, nothing is said concerning the dis-tance between two neighboring shorts. A thyristor has also been described for which not only i.s the diameter of the shorts given, but also their spacing. In this case, however, the diameters of the shorts lie between 100 and 200 ~Um and the distance between them is about 1 mm.
SUMMARY OF THE INVENTION
~ he invention pertains to a thyristor device com-prising a body of semiconductor material and electrical contact means; said body of semiconductor materlal i~ com-prised o~ zones of alternate semiconductlv:lty disposed in PN Junction forming relationships, an emitter zone of a first type of semiconductivity disposed at a top surface of the body, a base zone of a s~cond type of semiconductivity dis-posed in the body beneath the emitter zone, a plurality of small base portions of said second type of semiconductivity disposed in the emitter zone adjoining the base zone and extending from the base zone through the emitter zone to the top surface of the body, said small base portions forming circular shaped areas of a preferred diarneter at the top surface of the body, said circular shaped areas having centers located at preferred points on the surface of the body such that the centers of adJacent clrcular shaped areas are separated by a like distance, a ratio of said like dis-tance to said preferred diameter being greater than about 3;
said electrical contact means comprislng an emitter electrode affixed to the top surface of the body, said ernitter elec-~L~380~34 trode electrically contacting both the emitter zone and the circular shaped areas o~ said small base portions.
BRIEF DESCRIPTION OF THE DRAWINGS
Figure 1 presents a plan-view o~ part o~ a thyristor device;
~ ig. 2 shows, ln enlarged cross-section, part o~
the device shown in Fig. 1 taken along the line II-II; and, Fig. 3 shows a graph in which is plotted the current i(b) as a ~unction of the distance between the shorts, with the ratio (a/d) o~ such distance to the diameter of the shorts as a paramet,er.
D~SCRIPTION OF TH~ PR~ER~ED ~M~ODI~NT
The invention will now be expl~:Lncd in dctai~ on the basis o~ a prackical example in associatlon with appended drawings 1 to 3.
In ~ig. 1 a body 1 of semlconductor material com-prising a portion o~ a thyristor is provided with an emltter electrode 2 which is electrically connected with an emitter zone 5 of N-type semiconductivity in the body 1. An adjacent base zone 4 Or P-type semiconductivity lies below emitter zone 5, and is electrically connected with a control electrode 3. In emitter zone 5 are provided shorts 6 of P-type semi-conductivity which, in the example o~ this embodiment, ~orm :: ~
a concentric circle around control electrode 3. However, shorts 6 can be arranged in other ways. The base zone 4 iS
electrically connected to emitter electrode 2 via shorts 6.
The distance between any two adjacent shorts 6 is denoted by a, and the diameters o~ the shorts by d.
~ ig. 2 illustrates how the diameter d o~ the short circuits 6 has an influence on the dv/dt behavior and on the _LI_ current i(bo). This figure illustrates, on an enlarged scale, a portion of the thyristor device of Fig. 1 along the line II-II. Parts which are the same as in ~ig. 1 are given by the same identifying numbers. In Fig. 2, anode electrode 7 is affi~ed to anode emitter region 9. If a voltage of the polariky shown is applied to electrodes 2 and 7 of ~he thyristor, a current builds up whose ~low corresponds to that indicated by the arrows. Starting essen-tially ~rom the base zone 6, this current flows in an axial direction to the emitter electrode 2. It then ~lows under the emitter zone 5 on accQunt o~ the highest dop:ln~ in that locality, the current :~lowing in a latera~ direct~.on to ~he short 6 and ~rom there into th~ emlttcr electrode 2. ~h:ls current produces a voltage drop below emitter zone 5 which, referred to the potential o~ emitter electrode 2, is greatest on the outer periphery 8 o~ emitter zone 5. The thyristor will fire at this place if the voltage drop exceeds a speci-fied value which, for silicon thyristors, is about o.4v.
If the diameter of short 6 is made larger, the voltage drop under emitter zone 5 will decrease on account of the lateral current density decreasing with increasing circumference of the short. As a result, the dv/dt behavior actually improves and the current i(b) increases. However, the spread of the firing becomes appreciably slower and the forward voltage rises. I~ the diameter o~ the shorts 6 wer~ reduced, the spread of the ~iring would be less adversely af~ected and the forward voltage of the thyristor would drop accordingly, but the dv/dt behavior would be poorer and the current i(bo) would be smaller.
Optimum dv/dt properties, larger i(b) currents and simultaneously good firing propagation and low forward voltage are attainable along with a fast turn-off time when the diameter of each short is made _ 60 ~lm, and when the ratio of the distance between the centers of two adjacent shorts to the:lr diameter is = 3.
The graph presented ln Fig. 3 shows the relation-ship between the current i(b), which is also a measure o~
the dv/dt characteristics, as a f'unction of' the distance between the shorts, the ratio of the distance between the shorts to their diameter being used as a parameter. :[t can be seen that, f'or decre~sing values of' the distance between the shorts with a constant dlstance to ~iametcr ratlo, the current i(bo) remains constant as the distance "a" decreases.
It is f'urther evident that the current i(bo) decreases f`or larger values of' a/d. Thus, the current i(bo) is conslderably higher f'or the ratio a/d = 7 than for the ratio a/d = 20.
It does not seem reasonable to go below the radio a/d = 3 because the shor~ed emitter area will already be about 10%.
The utilization of the thyristor area would then become very poor.
The lower signif'icant limit of the diameters of' the shorts is set by the transition of' the curves to the horizontal. It is advisable to ef`f'ect the doping of the emitter zone and the shorts by the known ion implantation methods followed by di~usion. By this means, it ls possible to obtain a homogeneous emitter zone in the lateral direction which has an additional positive eff'ect on the uniformity o~ the f'iring operation. Consec~uently, with the presently employed photo-masking technique, it is advisable to make the lower value o~ the diameter of the shorts larger than ~1038Vi~4 the thickness of the N-type emitter zone.
On the other hand the lower practical meaningful diameter is set by the technology employed in producing the emitter and the shorts. For example on account o~ the all-round spread o~ the diffusion front, as well as under the masks ~or the shorts, lt ls very di~lcult to produce short circuits with diameters whlch are smaller than the depth o~
penetration o~ the emitters.
It should also be appreclated that the diagram 5~
-~we~ in ~ig. 3 applies to a certain doplng profile ln the base zone. For steeper pro~les, ~or example, the values Or the current i(bo) change in the dlrect~on which makes the current i(bo) lower in the rallln~ part o~ the curve.
Wlth the invention, better characterlstics are obtained by comparison with previously known thyristors ~or the same parameters for diameter and distance between shorts.
Thus, for example, with a conventional type Or thyristor with a blocking voltage o~ about 2000 V, short diameters o~
300 ~m and distances between shorts of 2 mm, a maximum dv/dt of 500 V/~s was measured, whereas with a thyristor having the same construction, but with short diameters o~
20 ~Am and short-to-short distances of 250 ~m, a maximum dv/dt o~ about 5000 V/~s was attained. In addition, the turn-off time was lower by a ~actor o~ 3, the forward voltage was about the same, and the :~irlng propagation speed was only about 30% below the value for conventional thyristors.
Claims (2)
1. A thyristor device comprising a body of semiconductor material and electrical contact means;
said body of semiconductor material comprising zones of alternate semiconductivity disposed in PN junction forming relationships, an emitter zone of a first type of semi-conductivity disposed at a top surface of the body, a base zone of a second type of semiconductivity disposed in the body beneath the emitter zone, a plurality of small base portions of said second type of semiconductivity disposed in the emitter zone adjoining the base zone and extending from the base zone through the emitter zone to the top surface of the body, said small base portions forming circular shaped areas of a preferred diameter at the top surface of the body, said preferred diameter being less than 20 microns, said circular shaped areas having centers located at preferred points on the surface of the body such that the centers of adjacent circular shaped areas are separated by a like distance, a ratio of said like distance to said preferred diameter being greater than 3; said electrical contact means comprising an emitter electrode affixed to the top surface of the body, said emitter electrode electrically contacting both the emitter zone and the circular shaped areas of said small base portions.
said body of semiconductor material comprising zones of alternate semiconductivity disposed in PN junction forming relationships, an emitter zone of a first type of semi-conductivity disposed at a top surface of the body, a base zone of a second type of semiconductivity disposed in the body beneath the emitter zone, a plurality of small base portions of said second type of semiconductivity disposed in the emitter zone adjoining the base zone and extending from the base zone through the emitter zone to the top surface of the body, said small base portions forming circular shaped areas of a preferred diameter at the top surface of the body, said preferred diameter being less than 20 microns, said circular shaped areas having centers located at preferred points on the surface of the body such that the centers of adjacent circular shaped areas are separated by a like distance, a ratio of said like distance to said preferred diameter being greater than 3; said electrical contact means comprising an emitter electrode affixed to the top surface of the body, said emitter electrode electrically contacting both the emitter zone and the circular shaped areas of said small base portions.
2. A thyristor device in accordance with claim 1 being so characterized that said emitter zone has a thick-ness less than said preferred diameter of the small base portions.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2438894A DE2438894C3 (en) | 1974-08-13 | 1974-08-13 | Thyristor with short-circuit emitter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1038084A true CA1038084A (en) | 1978-09-05 |
Family
ID=5923126
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA233,090A Expired CA1038084A (en) | 1974-08-13 | 1975-08-08 | Thyristor with shorted emitter |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS5530309B2 (en) |
| CA (1) | CA1038084A (en) |
| DE (1) | DE2438894C3 (en) |
| FR (1) | FR2282167A1 (en) |
| GB (1) | GB1479113A (en) |
| SE (1) | SE409260B (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2945347A1 (en) * | 1979-11-09 | 1981-05-21 | Siemens AG, 1000 Berlin und 8000 München | THYRISTOR WITH AUXILIARY ELECTRODE AND METHOD FOR ITS OPERATION |
| DE3017584C2 (en) * | 1980-05-08 | 1982-12-23 | SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg | Thyristor |
| DE3018499A1 (en) * | 1980-05-14 | 1981-11-19 | Siemens AG, 1000 Berlin und 8000 München | SEMICONDUCTOR COMPONENT |
| DE3112942A1 (en) * | 1981-03-31 | 1982-10-07 | Siemens AG, 1000 Berlin und 8000 München | THYRISTOR AND METHOD FOR ITS OPERATION |
| DE3917769A1 (en) * | 1989-05-31 | 1990-12-06 | Siemens Ag | Thyristor with emitter shunt connections - has N-doped thermally conductive N-base extensions |
-
1974
- 1974-08-13 DE DE2438894A patent/DE2438894C3/en not_active Expired
-
1975
- 1975-07-30 GB GB31819/75A patent/GB1479113A/en not_active Expired
- 1975-08-06 FR FR7524516A patent/FR2282167A1/en active Granted
- 1975-08-08 CA CA233,090A patent/CA1038084A/en not_active Expired
- 1975-08-13 SE SE7509089A patent/SE409260B/en unknown
- 1975-08-13 JP JP9843775A patent/JPS5530309B2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE2438894B2 (en) | 1978-06-22 |
| SE7509089L (en) | 1976-02-16 |
| DE2438894C3 (en) | 1979-02-22 |
| GB1479113A (en) | 1977-07-06 |
| FR2282167A1 (en) | 1976-03-12 |
| JPS5530309B2 (en) | 1980-08-09 |
| FR2282167B1 (en) | 1980-07-18 |
| SE409260B (en) | 1979-08-06 |
| JPS5144482A (en) | 1976-04-16 |
| DE2438894A1 (en) | 1976-02-26 |
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