GB1463621A - Transistor storage systems - Google Patents

Transistor storage systems

Info

Publication number
GB1463621A
GB1463621A GB914474A GB914474A GB1463621A GB 1463621 A GB1463621 A GB 1463621A GB 914474 A GB914474 A GB 914474A GB 914474 A GB914474 A GB 914474A GB 1463621 A GB1463621 A GB 1463621A
Authority
GB
United Kingdom
Prior art keywords
evaluator
transistor
circuit
digit line
line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB914474A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of GB1463621A publication Critical patent/GB1463621A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356104—Bistable circuits using complementary field-effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Static Random-Access Memory (AREA)
GB914474A 1973-04-06 1974-02-28 Transistor storage systems Expired GB1463621A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19732317497 DE2317497C2 (de) 1973-04-06 1973-04-06 Verfahren zum Betrieb eines Fünf-Transistoren-Speicherelementes

Publications (1)

Publication Number Publication Date
GB1463621A true GB1463621A (en) 1977-02-02

Family

ID=5877304

Family Applications (1)

Application Number Title Priority Date Filing Date
GB914474A Expired GB1463621A (en) 1973-04-06 1974-02-28 Transistor storage systems

Country Status (12)

Country Link
JP (1) JPS5760714B2 (de)
AT (1) AT338018B (de)
BE (1) BE813374A (de)
CA (1) CA1045716A (de)
CH (1) CH589344A5 (de)
DE (1) DE2317497C2 (de)
FR (1) FR2224836B1 (de)
GB (1) GB1463621A (de)
IT (1) IT1004116B (de)
LU (1) LU69791A1 (de)
NL (1) NL7404635A (de)
SE (1) SE390354B (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5289420A (en) * 1990-11-30 1994-02-22 Bull S.A. Method and circuit for transferring differential binary signals

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51127628A (en) * 1975-04-28 1976-11-06 Toshiba Corp Semiconductor memory
JPS5345939A (en) * 1976-10-07 1978-04-25 Sharp Corp Ram circuit
JPS53117340A (en) * 1977-03-24 1978-10-13 Toshiba Corp Semiconductor memory
JPS54107638A (en) * 1978-02-10 1979-08-23 Sanyo Electric Co Ltd Memory data readout circuit in semiconductor memory unit
US4208730A (en) * 1978-08-07 1980-06-17 Rca Corporation Precharge circuit for memory array
JPS57113492A (en) * 1981-01-07 1982-07-14 Nec Corp Memory circuit
JPS57173196U (de) * 1982-03-25 1982-11-01
JPS60242581A (ja) * 1984-05-16 1985-12-02 Toshiba Corp 半導体記憶装置のセンス増幅器
JPS60242582A (ja) * 1984-05-16 1985-12-02 Toshiba Corp 半導体記憶装置のセンス増幅器
JPH0333844U (de) * 1989-08-09 1991-04-03
FR2974667B1 (fr) 2011-04-26 2020-10-02 S O I Tec Silicon On Insulator Tech Amplificateur de detection differentiel sans transistor de commutation

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3644907A (en) * 1969-12-31 1972-02-22 Westinghouse Electric Corp Complementary mosfet memory cell
US3600609A (en) * 1970-02-03 1971-08-17 Shell Oil Co Igfet read amplifier for double-rail memory systems

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5289420A (en) * 1990-11-30 1994-02-22 Bull S.A. Method and circuit for transferring differential binary signals

Also Published As

Publication number Publication date
LU69791A1 (de) 1974-11-21
DE2317497B1 (de) 1974-06-20
ATA222774A (de) 1976-11-15
BE813374A (fr) 1974-10-07
IT1004116B (it) 1976-07-10
JPS5760714B2 (de) 1982-12-21
NL7404635A (de) 1974-10-08
DE2317497C2 (de) 1975-02-13
JPS49131545A (de) 1974-12-17
FR2224836A1 (de) 1974-10-31
AT338018B (de) 1977-07-25
CA1045716A (en) 1979-01-02
CH589344A5 (de) 1977-06-30
SE390354B (sv) 1976-12-13
FR2224836B1 (de) 1980-08-14

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee