CA1045716A - Method for operating transistor storage flip-flop and evaluator circuit therefor - Google Patents

Method for operating transistor storage flip-flop and evaluator circuit therefor

Info

Publication number
CA1045716A
CA1045716A CA196,877A CA196877A CA1045716A CA 1045716 A CA1045716 A CA 1045716A CA 196877 A CA196877 A CA 196877A CA 1045716 A CA1045716 A CA 1045716A
Authority
CA
Canada
Prior art keywords
flip
transistor
circuit
digit line
flop
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA196,877A
Other languages
English (en)
French (fr)
Other versions
CA196877S (en
Inventor
Karl Goser
Michael Pomper
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Application granted granted Critical
Publication of CA1045716A publication Critical patent/CA1045716A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356104—Bistable circuits using complementary field-effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Static Random-Access Memory (AREA)
CA196,877A 1973-04-06 1974-04-04 Method for operating transistor storage flip-flop and evaluator circuit therefor Expired CA1045716A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19732317497 DE2317497C2 (de) 1973-04-06 1973-04-06 Verfahren zum Betrieb eines Fünf-Transistoren-Speicherelementes

Publications (1)

Publication Number Publication Date
CA1045716A true CA1045716A (en) 1979-01-02

Family

ID=5877304

Family Applications (1)

Application Number Title Priority Date Filing Date
CA196,877A Expired CA1045716A (en) 1973-04-06 1974-04-04 Method for operating transistor storage flip-flop and evaluator circuit therefor

Country Status (12)

Country Link
JP (1) JPS5760714B2 (de)
AT (1) AT338018B (de)
BE (1) BE813374A (de)
CA (1) CA1045716A (de)
CH (1) CH589344A5 (de)
DE (1) DE2317497C2 (de)
FR (1) FR2224836B1 (de)
GB (1) GB1463621A (de)
IT (1) IT1004116B (de)
LU (1) LU69791A1 (de)
NL (1) NL7404635A (de)
SE (1) SE390354B (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9135964B2 (en) 2011-04-26 2015-09-15 Soitec Differential sense amplifier without switch transistors

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51127628A (en) * 1975-04-28 1976-11-06 Toshiba Corp Semiconductor memory
JPS5345939A (en) * 1976-10-07 1978-04-25 Sharp Corp Ram circuit
JPS53117340A (en) * 1977-03-24 1978-10-13 Toshiba Corp Semiconductor memory
JPS54107638A (en) * 1978-02-10 1979-08-23 Sanyo Electric Co Ltd Memory data readout circuit in semiconductor memory unit
US4208730A (en) * 1978-08-07 1980-06-17 Rca Corporation Precharge circuit for memory array
JPS57113492A (en) * 1981-01-07 1982-07-14 Nec Corp Memory circuit
JPS57173196U (de) * 1982-03-25 1982-11-01
JPS60242581A (ja) * 1984-05-16 1985-12-02 Toshiba Corp 半導体記憶装置のセンス増幅器
JPS60242582A (ja) * 1984-05-16 1985-12-02 Toshiba Corp 半導体記憶装置のセンス増幅器
JPH0333844U (de) * 1989-08-09 1991-04-03
FR2670061B1 (fr) * 1990-11-30 1996-09-20 Bull Sa Procede et dispositif de transfert de signaux binaires differentiels et application aux additionneurs a selection de retenue.

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3644907A (en) * 1969-12-31 1972-02-22 Westinghouse Electric Corp Complementary mosfet memory cell
US3600609A (en) * 1970-02-03 1971-08-17 Shell Oil Co Igfet read amplifier for double-rail memory systems

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9135964B2 (en) 2011-04-26 2015-09-15 Soitec Differential sense amplifier without switch transistors

Also Published As

Publication number Publication date
DE2317497C2 (de) 1975-02-13
CH589344A5 (de) 1977-06-30
JPS5760714B2 (de) 1982-12-21
AT338018B (de) 1977-07-25
FR2224836A1 (de) 1974-10-31
NL7404635A (de) 1974-10-08
DE2317497B1 (de) 1974-06-20
LU69791A1 (de) 1974-11-21
BE813374A (fr) 1974-10-07
FR2224836B1 (de) 1980-08-14
JPS49131545A (de) 1974-12-17
GB1463621A (en) 1977-02-02
ATA222774A (de) 1976-11-15
SE390354B (sv) 1976-12-13
IT1004116B (it) 1976-07-10

Similar Documents

Publication Publication Date Title
US3508211A (en) Electrically alterable non-destructive readout field effect transistor memory
CA1045716A (en) Method for operating transistor storage flip-flop and evaluator circuit therefor
US4123799A (en) High speed IFGET sense amplifier/latch
US3949383A (en) D. C. Stable semiconductor memory cell
US4112508A (en) Semiconductor memory
GB1427259A (en) Testin fet circuits
US4027294A (en) Compensation element for dynamic semiconductor stores, and method of operating the same
US5258959A (en) Memory cell reading circuit
US20050281115A1 (en) On-chip EE-PROM programming waveform generation
EP0036743A1 (de) Adressenpufferschaltung mit TTL- nach MOS-Pegel-Anpassung
US4535257A (en) Comparator circuit
US3644907A (en) Complementary mosfet memory cell
EP0233453A1 (de) Assoziativspeicherzelle
US4063224A (en) Circuit for the production of read-out pulses
US4459686A (en) Semiconductor device
US3964031A (en) Memory cell
US4692642A (en) Active pull-up circuit controlled by a single pull-up clock signal
US5166608A (en) Arrangement for high speed testing of field-effect transistors and memory cells employing the same
US4030081A (en) Dynamic transistor-storage element
US4122548A (en) Memory storage array with restore circuit
US6201433B1 (en) Semiconductor memory device having constant voltage circuit
US4467456A (en) Memory circuit
US4069474A (en) MOS Dynamic random access memory having an improved sensing circuit
US3231763A (en) Bistable memory element
US3693170A (en) Memory cells