GB1460489A - Field-effect transistors - Google Patents
Field-effect transistorsInfo
- Publication number
- GB1460489A GB1460489A GB1331374A GB1331374A GB1460489A GB 1460489 A GB1460489 A GB 1460489A GB 1331374 A GB1331374 A GB 1331374A GB 1331374 A GB1331374 A GB 1331374A GB 1460489 A GB1460489 A GB 1460489A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- over
- getter
- windows
- gettering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005669 field effect Effects 0.000 title 1
- 239000002019 doping agent Substances 0.000 abstract 3
- 238000005247 gettering Methods 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 239000011810 insulating material Substances 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 239000004020 conductor Substances 0.000 abstract 1
- 230000001627 detrimental effect Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 239000011733 molybdenum Substances 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 229910052594 sapphire Inorganic materials 0.000 abstract 1
- 239000010980 sapphire Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 229910052596 spinel Inorganic materials 0.000 abstract 1
- 239000011029 spinel Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
- H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
- H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
- H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
- H10D30/6717—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions the source and the drain regions being asymmetrical
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/03—Manufacture or treatment wherein the substrate comprises sapphire, e.g. silicon-on-sapphire [SOS]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/043—Dual dielectric
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/053—Field effect transistors fets
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/15—Silicon on sapphire SOS
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/913—Active solid-state devices, e.g. transistors, solid-state diodes with means to absorb or localize unwanted impurities or defects from semiconductors, e.g. heavy metal gettering
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thin Film Transistor (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2316118A DE2316118C3 (de) | 1973-03-30 | 1973-03-30 | Verfahren zur Herstellung von Feldeffekttransistoren durch Anwendung einer selektiven Getterung |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1460489A true GB1460489A (en) | 1977-01-06 |
Family
ID=5876584
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1331374A Expired GB1460489A (en) | 1973-03-30 | 1974-03-26 | Field-effect transistors |
Country Status (13)
| Country | Link |
|---|---|
| US (1) | US3897625A (enExample) |
| JP (1) | JPS5648986B2 (enExample) |
| AT (1) | AT339378B (enExample) |
| BE (1) | BE813048A (enExample) |
| CA (1) | CA991317A (enExample) |
| CH (1) | CH570041A5 (enExample) |
| DE (1) | DE2316118C3 (enExample) |
| FR (1) | FR2223839B1 (enExample) |
| GB (1) | GB1460489A (enExample) |
| IT (1) | IT1003883B (enExample) |
| LU (1) | LU69732A1 (enExample) |
| NL (1) | NL7404256A (enExample) |
| SE (1) | SE394767B (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2801085A1 (de) * | 1977-01-11 | 1978-07-13 | Zaidan Hojin Handotai Kenkyu | Statischer induktionstransistor |
| US4333224A (en) * | 1978-04-24 | 1982-06-08 | Buchanan Bobby L | Method of fabricating polysilicon/silicon junction field effect transistors |
| US4380113A (en) * | 1980-11-17 | 1983-04-19 | Signetics Corporation | Process for fabricating a high capacity memory cell |
| US4998146A (en) * | 1989-05-24 | 1991-03-05 | Xerox Corporation | High voltage thin film transistor |
| FR2774509B1 (fr) * | 1998-01-30 | 2001-11-16 | Sgs Thomson Microelectronics | Procede de depot d'une region de silicium monocristallin |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3490964A (en) * | 1966-04-29 | 1970-01-20 | Texas Instruments Inc | Process of forming semiconductor devices by masking and diffusion |
| US3783052A (en) * | 1972-11-10 | 1974-01-01 | Motorola Inc | Process for manufacturing integrated circuits on an alumina substrate |
| US3837071A (en) * | 1973-01-16 | 1974-09-24 | Rca Corp | Method of simultaneously making a sigfet and a mosfet |
-
1973
- 1973-03-30 DE DE2316118A patent/DE2316118C3/de not_active Expired
-
1974
- 1974-03-18 AT AT222874A patent/AT339378B/de not_active IP Right Cessation
- 1974-03-20 FR FR7409452A patent/FR2223839B1/fr not_active Expired
- 1974-03-22 CH CH402574A patent/CH570041A5/xx not_active IP Right Cessation
- 1974-03-26 IT IT49646/74A patent/IT1003883B/it active
- 1974-03-26 GB GB1331374A patent/GB1460489A/en not_active Expired
- 1974-03-28 LU LU69732A patent/LU69732A1/xx unknown
- 1974-03-28 JP JP3508174A patent/JPS5648986B2/ja not_active Expired
- 1974-03-28 US US455589A patent/US3897625A/en not_active Expired - Lifetime
- 1974-03-28 NL NL7404256A patent/NL7404256A/xx unknown
- 1974-03-29 CA CA196,351A patent/CA991317A/en not_active Expired
- 1974-03-29 SE SE7404271A patent/SE394767B/xx unknown
- 1974-03-29 BE BE142635A patent/BE813048A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| ATA222874A (de) | 1977-02-15 |
| DE2316118C3 (de) | 1975-11-27 |
| DE2316118A1 (de) | 1974-10-10 |
| SE394767B (sv) | 1977-07-04 |
| JPS49131082A (enExample) | 1974-12-16 |
| IT1003883B (it) | 1976-06-10 |
| CH570041A5 (enExample) | 1975-11-28 |
| LU69732A1 (enExample) | 1974-07-17 |
| US3897625A (en) | 1975-08-05 |
| CA991317A (en) | 1976-06-15 |
| FR2223839B1 (enExample) | 1978-02-10 |
| DE2316118B2 (enExample) | 1975-04-03 |
| AT339378B (de) | 1977-10-10 |
| JPS5648986B2 (enExample) | 1981-11-19 |
| NL7404256A (enExample) | 1974-10-02 |
| BE813048A (fr) | 1974-07-15 |
| FR2223839A1 (enExample) | 1974-10-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |