GB1448610A - Semiconductor devices having refractory metal and silicon layers - Google Patents
Semiconductor devices having refractory metal and silicon layersInfo
- Publication number
- GB1448610A GB1448610A GB4562174A GB4562174A GB1448610A GB 1448610 A GB1448610 A GB 1448610A GB 4562174 A GB4562174 A GB 4562174A GB 4562174 A GB4562174 A GB 4562174A GB 1448610 A GB1448610 A GB 1448610A
- Authority
- GB
- United Kingdom
- Prior art keywords
- silicon
- metal
- layer
- refractory metal
- semiconductor devices
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract 6
- 229910052710 silicon Inorganic materials 0.000 title abstract 6
- 239000010703 silicon Substances 0.000 title abstract 6
- 239000003870 refractory metal Substances 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title 1
- 229910052751 metal Inorganic materials 0.000 abstract 4
- 239000002184 metal Substances 0.000 abstract 4
- 229910021332 silicide Inorganic materials 0.000 abstract 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 1
- 238000000137 annealing Methods 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 239000011733 molybdenum Substances 0.000 abstract 1
- 229910052697 platinum Inorganic materials 0.000 abstract 1
- 229910052702 rhenium Inorganic materials 0.000 abstract 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 abstract 1
- 229910052703 rhodium Inorganic materials 0.000 abstract 1
- 239000010948 rhodium Substances 0.000 abstract 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
- 239000010937 tungsten Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0682—Silicides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Silicon Compounds (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US41181973A | 1973-11-01 | 1973-11-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1448610A true GB1448610A (en) | 1976-09-08 |
Family
ID=23630455
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB4562174A Expired GB1448610A (en) | 1973-11-01 | 1974-10-22 | Semiconductor devices having refractory metal and silicon layers |
Country Status (9)
| Country | Link |
|---|---|
| JP (1) | JPS5080790A (enrdf_load_stackoverflow) |
| BE (1) | BE821564A (enrdf_load_stackoverflow) |
| DE (1) | DE2450341A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2250198B1 (enrdf_load_stackoverflow) |
| GB (1) | GB1448610A (enrdf_load_stackoverflow) |
| IN (1) | IN140056B (enrdf_load_stackoverflow) |
| IT (1) | IT1022138B (enrdf_load_stackoverflow) |
| NL (1) | NL7414233A (enrdf_load_stackoverflow) |
| SE (1) | SE7413660L (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0070751A1 (en) * | 1981-07-13 | 1983-01-26 | FAIRCHILD CAMERA & INSTRUMENT CORPORATION | Method for lpcvd co-deposition of metal and silicon to form metal silicide |
| EP0093246A1 (en) * | 1982-04-30 | 1983-11-09 | Texas Instruments Incorporated | Process for adhering a metal on the surface of an insulator |
| GB2139419A (en) * | 1983-05-05 | 1984-11-07 | Standard Telephones Cables Ltd | Semiconductor devices |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53114366A (en) * | 1977-03-16 | 1978-10-05 | Toshiba Corp | Semiconductor device |
| US4180596A (en) * | 1977-06-30 | 1979-12-25 | International Business Machines Corporation | Method for providing a metal silicide layer on a substrate |
| JPS58202553A (ja) * | 1982-05-21 | 1983-11-25 | Toshiba Corp | 半導体装置 |
| JPS6014852U (ja) * | 1983-07-07 | 1985-01-31 | 屋敷 静雄 | スベリドメ付きドライバ− |
| NL9000795A (nl) * | 1990-04-04 | 1991-11-01 | Imec Inter Uni Micro Electr | Werkwijze voor het aanbrengen van metaalsilicides op silicium. |
-
1974
- 1974-09-11 IN IN2028/CAL/74A patent/IN140056B/en unknown
- 1974-09-19 IT IT2749874A patent/IT1022138B/it active
- 1974-10-22 GB GB4562174A patent/GB1448610A/en not_active Expired
- 1974-10-23 DE DE19742450341 patent/DE2450341A1/de active Pending
- 1974-10-28 BE BE149953A patent/BE821564A/xx unknown
- 1974-10-28 FR FR7436005A patent/FR2250198B1/fr not_active Expired
- 1974-10-29 JP JP12533474A patent/JPS5080790A/ja active Pending
- 1974-10-30 SE SE7413660A patent/SE7413660L/xx not_active Application Discontinuation
- 1974-10-31 NL NL7414233A patent/NL7414233A/xx unknown
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0070751A1 (en) * | 1981-07-13 | 1983-01-26 | FAIRCHILD CAMERA & INSTRUMENT CORPORATION | Method for lpcvd co-deposition of metal and silicon to form metal silicide |
| EP0093246A1 (en) * | 1982-04-30 | 1983-11-09 | Texas Instruments Incorporated | Process for adhering a metal on the surface of an insulator |
| GB2139419A (en) * | 1983-05-05 | 1984-11-07 | Standard Telephones Cables Ltd | Semiconductor devices |
Also Published As
| Publication number | Publication date |
|---|---|
| IT1022138B (it) | 1978-03-20 |
| JPS5080790A (enrdf_load_stackoverflow) | 1975-07-01 |
| FR2250198A1 (enrdf_load_stackoverflow) | 1975-05-30 |
| DE2450341A1 (de) | 1975-05-07 |
| FR2250198B1 (enrdf_load_stackoverflow) | 1978-06-09 |
| SE7413660L (enrdf_load_stackoverflow) | 1975-05-02 |
| NL7414233A (nl) | 1975-05-06 |
| IN140056B (enrdf_load_stackoverflow) | 1976-09-04 |
| BE821564A (fr) | 1975-02-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB1493150A (en) | Zero-bias schottky barrier detector diodes | |
| EP0173611A3 (en) | Self-aligned metal silicide process for integrated circuits having self-aligned polycrystalline silicon electrodes | |
| GB1386268A (en) | Electrical contact structure | |
| GB1448610A (en) | Semiconductor devices having refractory metal and silicon layers | |
| GB1321034A (en) | Method for making an intermetallic contact to a semiconductor device | |
| GB1038609A (en) | Ohmic contacts to thin film passivated resistors | |
| GB1193868A (en) | Ohmic Contacts for Semiconductor Devices | |
| KR900010993A (ko) | Vlsi장치의 n+ 및 p+저항영역에 저저항 접속방법 | |
| GB1508897A (en) | Heat-treating method for metal film resistor | |
| GB1244618A (en) | A method of forming a metal contact on an element and a vacuum deposition system that may be used in performing this method | |
| GB1445906A (en) | Two-phase charge shift arrangements | |
| ES409995A1 (es) | Procedimiento para la union de un metal soporte titanio o tantalio, con hierro o cobre. | |
| GB1318837A (en) | Method for fabricating the coating of contacts | |
| GB1152683A (en) | Improvements in or relating to Electrical Resistance Elements | |
| GB1341273A (en) | Silicon transistors and methods of making them | |
| JPS5389374A (en) | Production of semiconductor device | |
| GB1444000A (en) | Schottky barrier contacts and methods of making same | |
| GB1349046A (en) | Method of producing a stable tantalum-aluminum thin film | |
| GB1524870A (en) | Provision of conductor layer patterns | |
| GB1518564A (en) | Method for the low pressure pyrolytic deposition of silicon nitride | |
| GB1253779A (en) | Improvements in or relating to the deposition of gallium phosphide | |
| KR920001658A (ko) | 비정질 질화티타늄막을 이용한 금속배선형성방법 | |
| JPS5898921A (ja) | 配線電極形成方法 | |
| JPS5698874A (en) | Preparation of semiconductor device | |
| GB1365930A (en) | Electrical superconductive device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PCNP | Patent ceased through non-payment of renewal fee |