DE2450341A1 - Halbleiterbauteile mit hitzebestaendigen metallschichten - Google Patents
Halbleiterbauteile mit hitzebestaendigen metallschichtenInfo
- Publication number
- DE2450341A1 DE2450341A1 DE19742450341 DE2450341A DE2450341A1 DE 2450341 A1 DE2450341 A1 DE 2450341A1 DE 19742450341 DE19742450341 DE 19742450341 DE 2450341 A DE2450341 A DE 2450341A DE 2450341 A1 DE2450341 A1 DE 2450341A1
- Authority
- DE
- Germany
- Prior art keywords
- silicon
- heat
- metal
- target
- resistant metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052751 metal Inorganic materials 0.000 title claims description 16
- 239000002184 metal Substances 0.000 title claims description 16
- 239000004065 semiconductor Substances 0.000 title claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 26
- 239000010703 silicon Substances 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 14
- 229910021332 silicide Inorganic materials 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 12
- 239000002245 particle Substances 0.000 claims description 11
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 8
- -1 silicide compound Chemical class 0.000 claims description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 23
- 230000035515 penetration Effects 0.000 description 6
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 description 5
- 229910021339 platinum silicide Inorganic materials 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- 206010010144 Completed suicide Diseases 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000011819 refractory material Substances 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- WNUPENMBHHEARK-UHFFFAOYSA-N silicon tungsten Chemical compound [Si].[W] WNUPENMBHHEARK-UHFFFAOYSA-N 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0682—Silicides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Silicon Compounds (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US41181973A | 1973-11-01 | 1973-11-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2450341A1 true DE2450341A1 (de) | 1975-05-07 |
Family
ID=23630455
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19742450341 Pending DE2450341A1 (de) | 1973-11-01 | 1974-10-23 | Halbleiterbauteile mit hitzebestaendigen metallschichten |
Country Status (9)
| Country | Link |
|---|---|
| JP (1) | JPS5080790A (enrdf_load_stackoverflow) |
| BE (1) | BE821564A (enrdf_load_stackoverflow) |
| DE (1) | DE2450341A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2250198B1 (enrdf_load_stackoverflow) |
| GB (1) | GB1448610A (enrdf_load_stackoverflow) |
| IN (1) | IN140056B (enrdf_load_stackoverflow) |
| IT (1) | IT1022138B (enrdf_load_stackoverflow) |
| NL (1) | NL7414233A (enrdf_load_stackoverflow) |
| SE (1) | SE7413660L (enrdf_load_stackoverflow) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53114366A (en) * | 1977-03-16 | 1978-10-05 | Toshiba Corp | Semiconductor device |
| US4180596A (en) * | 1977-06-30 | 1979-12-25 | International Business Machines Corporation | Method for providing a metal silicide layer on a substrate |
| US4359490A (en) * | 1981-07-13 | 1982-11-16 | Fairchild Camera & Instrument Corp. | Method for LPCVD co-deposition of metal and silicon to form metal silicide |
| US4507851A (en) * | 1982-04-30 | 1985-04-02 | Texas Instruments Incorporated | Process for forming an electrical interconnection system on a semiconductor |
| JPS58202553A (ja) * | 1982-05-21 | 1983-11-25 | Toshiba Corp | 半導体装置 |
| GB2139419A (en) * | 1983-05-05 | 1984-11-07 | Standard Telephones Cables Ltd | Semiconductor devices |
| JPS6014852U (ja) * | 1983-07-07 | 1985-01-31 | 屋敷 静雄 | スベリドメ付きドライバ− |
| NL9000795A (nl) * | 1990-04-04 | 1991-11-01 | Imec Inter Uni Micro Electr | Werkwijze voor het aanbrengen van metaalsilicides op silicium. |
-
1974
- 1974-09-11 IN IN2028/CAL/74A patent/IN140056B/en unknown
- 1974-09-19 IT IT2749874A patent/IT1022138B/it active
- 1974-10-22 GB GB4562174A patent/GB1448610A/en not_active Expired
- 1974-10-23 DE DE19742450341 patent/DE2450341A1/de active Pending
- 1974-10-28 BE BE149953A patent/BE821564A/xx unknown
- 1974-10-28 FR FR7436005A patent/FR2250198B1/fr not_active Expired
- 1974-10-29 JP JP12533474A patent/JPS5080790A/ja active Pending
- 1974-10-30 SE SE7413660A patent/SE7413660L/xx not_active Application Discontinuation
- 1974-10-31 NL NL7414233A patent/NL7414233A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| GB1448610A (en) | 1976-09-08 |
| IT1022138B (it) | 1978-03-20 |
| JPS5080790A (enrdf_load_stackoverflow) | 1975-07-01 |
| FR2250198A1 (enrdf_load_stackoverflow) | 1975-05-30 |
| FR2250198B1 (enrdf_load_stackoverflow) | 1978-06-09 |
| SE7413660L (enrdf_load_stackoverflow) | 1975-05-02 |
| NL7414233A (nl) | 1975-05-06 |
| IN140056B (enrdf_load_stackoverflow) | 1976-09-04 |
| BE821564A (fr) | 1975-02-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE2440481C3 (de) | Verfahren zum Herstellen von Dünnschicht-Leiterzügen auf einem elektrisch isolierenden Träger | |
| DE1446161A1 (de) | Verfahren zum Herstellen eines Supraleiters mit verbesserter Supraleitfaehigkeit und unveraenderten Abmessungen | |
| DE3855613T2 (de) | Metallisiertes substrat für Schaltungen aus Nitrid-Typ- Keramiken | |
| DE102015100665B4 (de) | Verfahren zum Erzeugen einer Metallschicht auf einem Halbleiterkörper unter Verwendung eines Druckprozesses | |
| DE2617226C2 (de) | Paste und Verfahren zur Bildung eines elektrischen Dickfilmleiters | |
| DE68918565T2 (de) | Verfahren zur herstellung von sonnenzellenkontakten. | |
| DE3785946T2 (de) | Halbleiterbauelement aus positiver keramik. | |
| DE2228678A1 (de) | Verfahren zum herstellen einer schicht aus leiterzugmaterial fuer halbleiterbauteile | |
| DE102016101564A1 (de) | Vorrichtung mit einer metallisierungsschicht und herstellungsverfahren für eine vorrichtung | |
| DE2650466C2 (de) | Elektrischer Widerstand | |
| DE2601656A1 (de) | Hochohmige metallkeramikschicht und verfahren zu deren herstellung | |
| DE112013006396B4 (de) | Verfahren zur Herstellung eines Anschlussverbinders sowie einen hierdurch erhältlicher Anschlussverbinder | |
| DE2217737B2 (de) | Verfahren zum Herstellen eines elektrischen Leitungssystems | |
| DE2450341A1 (de) | Halbleiterbauteile mit hitzebestaendigen metallschichten | |
| DE3700912C2 (enrdf_load_stackoverflow) | ||
| DE1521336A1 (de) | Verfahren zum Herstellen von staebchenfoermigen,auf beiden Stirnflaechen mit gleichfoermigen niederohmigen Kontakten versehenen Koerpern aus Galliumarsenid | |
| DE2525482A1 (de) | Fuer halbleiterbauteile geeignete materialzusammensetzungen | |
| DE2125643A1 (de) | Elektrische Leiter und Halbleiterbauelemente sowie Verfahren zu ihrer Herstellung | |
| DE2141718A1 (de) | Verfahren zum Herstellen elektri scher Kontakte auf der Oberflache eines Halbleiterbauteils | |
| DE102014204729B4 (de) | Dickschicht-Leitfähigkeitstinten für Elektronikvorrichtungen | |
| DE2134291A1 (de) | Halbleitervorrichtung | |
| DE2012063A1 (de) | Verfahren zum Herstellen von aus Alu minium Legierungen bestehenden Kontakt metallschichten an Halbleiterbauelementen | |
| DE1186950C2 (de) | Verfahren zum entfernen von unerwuenschten metallen aus einem einen pn-uebergang aufweisenden silicium-halbleiterkoerper | |
| DE2829917A1 (de) | Verfahren zum herstellen von halbleiterbauelementen | |
| DE19828846A1 (de) | Verfahren zum Beschichten eines Substrats |