IT1022138B - Dispositivo semiconduttore dotato di strati di metalli refrattari e metodo di fabbricazione dello stesso - Google Patents

Dispositivo semiconduttore dotato di strati di metalli refrattari e metodo di fabbricazione dello stesso

Info

Publication number
IT1022138B
IT1022138B IT2749874A IT2749874A IT1022138B IT 1022138 B IT1022138 B IT 1022138B IT 2749874 A IT2749874 A IT 2749874A IT 2749874 A IT2749874 A IT 2749874A IT 1022138 B IT1022138 B IT 1022138B
Authority
IT
Italy
Prior art keywords
layers
manufacturing
semiconductor device
same
device equipped
Prior art date
Application number
IT2749874A
Other languages
English (en)
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Application granted granted Critical
Publication of IT1022138B publication Critical patent/IT1022138B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0682—Silicides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Silicon Compounds (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
IT2749874A 1973-11-01 1974-09-19 Dispositivo semiconduttore dotato di strati di metalli refrattari e metodo di fabbricazione dello stesso IT1022138B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US41181973A 1973-11-01 1973-11-01

Publications (1)

Publication Number Publication Date
IT1022138B true IT1022138B (it) 1978-03-20

Family

ID=23630455

Family Applications (1)

Application Number Title Priority Date Filing Date
IT2749874A IT1022138B (it) 1973-11-01 1974-09-19 Dispositivo semiconduttore dotato di strati di metalli refrattari e metodo di fabbricazione dello stesso

Country Status (9)

Country Link
JP (1) JPS5080790A (it)
BE (1) BE821564A (it)
DE (1) DE2450341A1 (it)
FR (1) FR2250198B1 (it)
GB (1) GB1448610A (it)
IN (1) IN140056B (it)
IT (1) IT1022138B (it)
NL (1) NL7414233A (it)
SE (1) SE7413660L (it)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53114366A (en) * 1977-03-16 1978-10-05 Toshiba Corp Semiconductor device
US4180596A (en) * 1977-06-30 1979-12-25 International Business Machines Corporation Method for providing a metal silicide layer on a substrate
US4359490A (en) * 1981-07-13 1982-11-16 Fairchild Camera & Instrument Corp. Method for LPCVD co-deposition of metal and silicon to form metal silicide
US4507851A (en) * 1982-04-30 1985-04-02 Texas Instruments Incorporated Process for forming an electrical interconnection system on a semiconductor
JPS58202553A (ja) * 1982-05-21 1983-11-25 Toshiba Corp 半導体装置
GB2139419A (en) * 1983-05-05 1984-11-07 Standard Telephones Cables Ltd Semiconductor devices
JPS6014852U (ja) * 1983-07-07 1985-01-31 屋敷　静雄 スベリドメ付きドライバ−
NL9000795A (nl) * 1990-04-04 1991-11-01 Imec Inter Uni Micro Electr Werkwijze voor het aanbrengen van metaalsilicides op silicium.

Also Published As

Publication number Publication date
FR2250198B1 (it) 1978-06-09
JPS5080790A (it) 1975-07-01
GB1448610A (en) 1976-09-08
BE821564A (fr) 1975-02-17
FR2250198A1 (it) 1975-05-30
SE7413660L (it) 1975-05-02
NL7414233A (nl) 1975-05-06
IN140056B (it) 1976-09-04
DE2450341A1 (de) 1975-05-07

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