GB1444000A - Schottky barrier contacts and methods of making same - Google Patents
Schottky barrier contacts and methods of making sameInfo
- Publication number
- GB1444000A GB1444000A GB5980973A GB5980973A GB1444000A GB 1444000 A GB1444000 A GB 1444000A GB 5980973 A GB5980973 A GB 5980973A GB 5980973 A GB5980973 A GB 5980973A GB 1444000 A GB1444000 A GB 1444000A
- Authority
- GB
- United Kingdom
- Prior art keywords
- platinum
- substrate
- methods
- schottky barrier
- making same
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000004888 barrier function Effects 0.000 title 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract 7
- 239000000758 substrate Substances 0.000 abstract 4
- 229910052697 platinum Inorganic materials 0.000 abstract 3
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000012300 argon atmosphere Substances 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 229910021339 platinum silicide Inorganic materials 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/541—Heating or cooling of the substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Abstract
1444000 Coating Si with Pt GENERAL ELECTRIC CO 27 Dec 1973 [26 Dec 1972] 59809/73 Heading C7F [Also in Division H1] A contact of platinum silicide is formed on a silicon substrate 42 by heating the substrate 42 to between 400‹C and 700‹C and depositing platinum on an exposed face thereof. The platinum may be evaporated or sputtered from a cathode 56 while the substrate 42 is heated by an element 57 under a table 41 and in a low-pressure argon atmosphere. The sputtering system includes filaments 50, 51 and a voltage supply system for biasing the substrate 42, the elements 50, 51 and the platinum cathode 56 appropriately.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US31839472A | 1972-12-26 | 1972-12-26 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1444000A true GB1444000A (en) | 1976-07-28 |
Family
ID=23238005
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB5980973A Expired GB1444000A (en) | 1972-12-26 | 1973-12-27 | Schottky barrier contacts and methods of making same |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS5714029B2 (en) |
| DE (1) | DE2363061A1 (en) |
| FR (1) | FR2211756A1 (en) |
| GB (1) | GB1444000A (en) |
| IT (1) | IT1002232B (en) |
| NL (1) | NL7317158A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2137412A (en) * | 1983-03-15 | 1984-10-03 | Standard Telephones Cables Ltd | Semiconductor device |
| GB2265636A (en) * | 1989-09-21 | 1993-10-06 | Int Rectifier Corp | Platinum diffusion process |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4206540A (en) * | 1978-06-02 | 1980-06-10 | International Rectifier Corporation | Schottky device and method of manufacture using palladium and platinum intermetallic alloys and titanium barrier |
| JPS5638869A (en) * | 1979-09-07 | 1981-04-14 | Seiko Epson Corp | Manufacture of mos-type semiconductor device |
-
1973
- 1973-12-10 IT IT3207973A patent/IT1002232B/en active
- 1973-12-14 NL NL7317158A patent/NL7317158A/xx unknown
- 1973-12-19 DE DE19732363061 patent/DE2363061A1/en active Pending
- 1973-12-24 JP JP14368773A patent/JPS5714029B2/ja not_active Expired
- 1973-12-26 FR FR7346209A patent/FR2211756A1/fr not_active Withdrawn
- 1973-12-27 GB GB5980973A patent/GB1444000A/en not_active Expired
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2137412A (en) * | 1983-03-15 | 1984-10-03 | Standard Telephones Cables Ltd | Semiconductor device |
| GB2265636A (en) * | 1989-09-21 | 1993-10-06 | Int Rectifier Corp | Platinum diffusion process |
| GB2265636B (en) * | 1989-09-21 | 1994-05-18 | Int Rectifier Corp | Platinum diffusion process |
Also Published As
| Publication number | Publication date |
|---|---|
| NL7317158A (en) | 1974-06-28 |
| JPS4998179A (en) | 1974-09-17 |
| FR2211756A1 (en) | 1974-07-19 |
| JPS5714029B2 (en) | 1982-03-20 |
| DE2363061A1 (en) | 1974-07-04 |
| IT1002232B (en) | 1976-05-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PCNP | Patent ceased through non-payment of renewal fee |