GB1436999A - Method of depositing aluminium on the surface of a semi- conductor wafer - Google Patents

Method of depositing aluminium on the surface of a semi- conductor wafer

Info

Publication number
GB1436999A
GB1436999A GB2900272A GB2900272A GB1436999A GB 1436999 A GB1436999 A GB 1436999A GB 2900272 A GB2900272 A GB 2900272A GB 2900272 A GB2900272 A GB 2900272A GB 1436999 A GB1436999 A GB 1436999A
Authority
GB
United Kingdom
Prior art keywords
semi
conductor wafer
june
depositing aluminium
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2900272A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lucas Electrical Co Ltd
Original Assignee
Lucas Electrical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lucas Electrical Co Ltd filed Critical Lucas Electrical Co Ltd
Priority to GB2900272A priority Critical patent/GB1436999A/en
Priority to AU56844/73A priority patent/AU467587B2/en
Priority to JP48069254A priority patent/JPS4958754A/ja
Priority to NL7308687A priority patent/NL7308687A/xx
Priority to DE2331717A priority patent/DE2331717A1/de
Publication of GB1436999A publication Critical patent/GB1436999A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
GB2900272A 1972-06-21 1972-06-21 Method of depositing aluminium on the surface of a semi- conductor wafer Expired GB1436999A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
GB2900272A GB1436999A (en) 1972-06-21 1972-06-21 Method of depositing aluminium on the surface of a semi- conductor wafer
AU56844/73A AU467587B2 (en) 1972-06-21 1973-06-12 A method of and apparatus for depositing aluminium onthe surface ofa semiconductor wafer
JP48069254A JPS4958754A (https=) 1972-06-21 1973-06-21
NL7308687A NL7308687A (https=) 1972-06-21 1973-06-21
DE2331717A DE2331717A1 (de) 1972-06-21 1973-06-22 Verfahren und vorrichtung zur ablagerung von aluminium auf der oberflaeche eines halbleiterplaettchens

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB2900272A GB1436999A (en) 1972-06-21 1972-06-21 Method of depositing aluminium on the surface of a semi- conductor wafer

Publications (1)

Publication Number Publication Date
GB1436999A true GB1436999A (en) 1976-05-26

Family

ID=10284692

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2900272A Expired GB1436999A (en) 1972-06-21 1972-06-21 Method of depositing aluminium on the surface of a semi- conductor wafer

Country Status (5)

Country Link
JP (1) JPS4958754A (https=)
AU (1) AU467587B2 (https=)
DE (1) DE2331717A1 (https=)
GB (1) GB1436999A (https=)
NL (1) NL7308687A (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4430364A (en) 1981-03-23 1984-02-07 Fujitsu Limited Method for forming an aluminum metallic thin film by vapor phase growth on a semiconductor substrate
GB2266897A (en) * 1992-05-13 1993-11-17 Mtu Muenchen Gmbh Depositing metallic interlayers using krypton or neon; aluminium diffusion coating

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59168635A (ja) * 1983-03-15 1984-09-22 Fuji Electric Corp Res & Dev Ltd 半導体装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4430364A (en) 1981-03-23 1984-02-07 Fujitsu Limited Method for forming an aluminum metallic thin film by vapor phase growth on a semiconductor substrate
EP0064805A3 (en) * 1981-03-23 1984-10-10 Fujitsu Limited Method of producing a metallic thin film on a semiconductor body
GB2266897A (en) * 1992-05-13 1993-11-17 Mtu Muenchen Gmbh Depositing metallic interlayers using krypton or neon; aluminium diffusion coating
GB2266897B (en) * 1992-05-13 1996-04-17 Mtu Muenchen Gmbh Process for depositing metallic interlayers

Also Published As

Publication number Publication date
DE2331717A1 (de) 1974-01-10
NL7308687A (https=) 1973-12-27
JPS4958754A (https=) 1974-06-07
AU467587B2 (en) 1975-12-04
AU5684473A (en) 1974-12-12

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee