GB1436999A - Method of depositing aluminium on the surface of a semi- conductor wafer - Google Patents

Method of depositing aluminium on the surface of a semi- conductor wafer

Info

Publication number
GB1436999A
GB1436999A GB2900272A GB2900272A GB1436999A GB 1436999 A GB1436999 A GB 1436999A GB 2900272 A GB2900272 A GB 2900272A GB 2900272 A GB2900272 A GB 2900272A GB 1436999 A GB1436999 A GB 1436999A
Authority
GB
United Kingdom
Prior art keywords
semi
conductor wafer
june
depositing aluminium
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2900272A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lucas Electrical Co Ltd
Original Assignee
Lucas Electrical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lucas Electrical Co Ltd filed Critical Lucas Electrical Co Ltd
Priority to GB2900272A priority Critical patent/GB1436999A/en
Priority to AU56844/73A priority patent/AU467587B2/en
Priority to JP6925473A priority patent/JPS4958754A/ja
Priority to NL7308687A priority patent/NL7308687A/xx
Priority to DE19732331717 priority patent/DE2331717A1/en
Publication of GB1436999A publication Critical patent/GB1436999A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

1436999 Vapour deposition of Al on semiconductors LUCAS ELECTRICAL CO Ltd 5 June 1973 [21 June 1972] 29002/72 Heading C7F Al is deposited from a source, on a movable carrier 16a, on to semi-conductor wafers in a boat 32, whilst evacuating the furnace 12 by pump 33 and feeding inert gas through a pipe 15. The gas may be argon, xenon, krypton, neon or helium. (For Figure see next page)
GB2900272A 1972-06-21 1972-06-21 Method of depositing aluminium on the surface of a semi- conductor wafer Expired GB1436999A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
GB2900272A GB1436999A (en) 1972-06-21 1972-06-21 Method of depositing aluminium on the surface of a semi- conductor wafer
AU56844/73A AU467587B2 (en) 1972-06-21 1973-06-12 A method of and apparatus for depositing aluminium onthe surface ofa semiconductor wafer
JP6925473A JPS4958754A (en) 1972-06-21 1973-06-21
NL7308687A NL7308687A (en) 1972-06-21 1973-06-21
DE19732331717 DE2331717A1 (en) 1972-06-21 1973-06-22 METHOD AND DEVICE FOR DEPOSITING ALUMINUM ON THE SURFACE OF A SEMICONDUCTOR PLATE

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB2900272A GB1436999A (en) 1972-06-21 1972-06-21 Method of depositing aluminium on the surface of a semi- conductor wafer

Publications (1)

Publication Number Publication Date
GB1436999A true GB1436999A (en) 1976-05-26

Family

ID=10284692

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2900272A Expired GB1436999A (en) 1972-06-21 1972-06-21 Method of depositing aluminium on the surface of a semi- conductor wafer

Country Status (5)

Country Link
JP (1) JPS4958754A (en)
AU (1) AU467587B2 (en)
DE (1) DE2331717A1 (en)
GB (1) GB1436999A (en)
NL (1) NL7308687A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0064805A2 (en) * 1981-03-23 1982-11-17 Fujitsu Limited Method of producing a metallic thin film on a semiconductor body
GB2266897A (en) * 1992-05-13 1993-11-17 Mtu Muenchen Gmbh Depositing metallic interlayers using krypton or neon; aluminium diffusion coating

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59168635A (en) * 1983-03-15 1984-09-22 Fuji Electric Corp Res & Dev Ltd Semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0064805A2 (en) * 1981-03-23 1982-11-17 Fujitsu Limited Method of producing a metallic thin film on a semiconductor body
EP0064805A3 (en) * 1981-03-23 1984-10-10 Fujitsu Limited Method of producing a metallic thin film on a semiconductor body
GB2266897A (en) * 1992-05-13 1993-11-17 Mtu Muenchen Gmbh Depositing metallic interlayers using krypton or neon; aluminium diffusion coating
GB2266897B (en) * 1992-05-13 1996-04-17 Mtu Muenchen Gmbh Process for depositing metallic interlayers

Also Published As

Publication number Publication date
AU467587B2 (en) 1975-12-04
NL7308687A (en) 1973-12-27
DE2331717A1 (en) 1974-01-10
AU5684473A (en) 1974-12-12
JPS4958754A (en) 1974-06-07

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee