DE2331717A1 - Verfahren und vorrichtung zur ablagerung von aluminium auf der oberflaeche eines halbleiterplaettchens - Google Patents

Verfahren und vorrichtung zur ablagerung von aluminium auf der oberflaeche eines halbleiterplaettchens

Info

Publication number
DE2331717A1
DE2331717A1 DE2331717A DE2331717A DE2331717A1 DE 2331717 A1 DE2331717 A1 DE 2331717A1 DE 2331717 A DE2331717 A DE 2331717A DE 2331717 A DE2331717 A DE 2331717A DE 2331717 A1 DE2331717 A1 DE 2331717A1
Authority
DE
Germany
Prior art keywords
daa
aaa
der
ofea
aaj
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE2331717A
Other languages
German (de)
English (en)
Inventor
Cyrus Hughes
Robert Moore
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lucas Electrical Co Ltd
Original Assignee
Lucas Electrical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lucas Electrical Co Ltd filed Critical Lucas Electrical Co Ltd
Publication of DE2331717A1 publication Critical patent/DE2331717A1/de
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
DE2331717A 1972-06-21 1973-06-22 Verfahren und vorrichtung zur ablagerung von aluminium auf der oberflaeche eines halbleiterplaettchens Pending DE2331717A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB2900272A GB1436999A (en) 1972-06-21 1972-06-21 Method of depositing aluminium on the surface of a semi- conductor wafer

Publications (1)

Publication Number Publication Date
DE2331717A1 true DE2331717A1 (de) 1974-01-10

Family

ID=10284692

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2331717A Pending DE2331717A1 (de) 1972-06-21 1973-06-22 Verfahren und vorrichtung zur ablagerung von aluminium auf der oberflaeche eines halbleiterplaettchens

Country Status (5)

Country Link
JP (1) JPS4958754A (https=)
AU (1) AU467587B2 (https=)
DE (1) DE2331717A1 (https=)
GB (1) GB1436999A (https=)
NL (1) NL7308687A (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5948952B2 (ja) * 1981-03-23 1984-11-29 富士通株式会社 金属薄膜の形成方法
JPS59168635A (ja) * 1983-03-15 1984-09-22 Fuji Electric Corp Res & Dev Ltd 半導体装置
DE4215664C1 (de) * 1992-05-13 1993-11-25 Mtu Muenchen Gmbh Verfahren zum Aufbringen von metallischen Zwischenschichten und seine Anwendung

Also Published As

Publication number Publication date
NL7308687A (https=) 1973-12-27
JPS4958754A (https=) 1974-06-07
AU467587B2 (en) 1975-12-04
AU5684473A (en) 1974-12-12
GB1436999A (en) 1976-05-26

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