GB1413467A - Monolithic integrated semiconductor circuits - Google Patents

Monolithic integrated semiconductor circuits

Info

Publication number
GB1413467A
GB1413467A GB1930175A GB1930175A GB1413467A GB 1413467 A GB1413467 A GB 1413467A GB 1930175 A GB1930175 A GB 1930175A GB 1930175 A GB1930175 A GB 1930175A GB 1413467 A GB1413467 A GB 1413467A
Authority
GB
United Kingdom
Prior art keywords
integrated semiconductor
monolithic integrated
semiconductor circuits
zone
sept
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1930175A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of GB1413467A publication Critical patent/GB1413467A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/14—Modifications for compensating variations of physical values, e.g. of temperature
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/302—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34—DC amplifiers in which all stages are DC-coupled
    • H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
    • H03F3/347—DC amplifiers in which all stages are DC-coupled with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H03K17/602—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors in integrated circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)
  • Element Separation (AREA)
GB1930175A 1971-09-22 1972-09-21 Monolithic integrated semiconductor circuits Expired GB1413467A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2147179A DE2147179C3 (de) 1971-09-22 1971-09-22 Monolithisch integrierte Stromquelle

Publications (1)

Publication Number Publication Date
GB1413467A true GB1413467A (en) 1975-11-12

Family

ID=5820199

Family Applications (2)

Application Number Title Priority Date Filing Date
GB1930175A Expired GB1413467A (en) 1971-09-22 1972-09-21 Monolithic integrated semiconductor circuits
GB1815675A Expired GB1413466A (en) 1971-09-22 1972-09-21 Monolithic integrated circuits

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB1815675A Expired GB1413466A (en) 1971-09-22 1972-09-21 Monolithic integrated circuits

Country Status (6)

Country Link
JP (1) JPS5823749B2 (enExample)
DE (1) DE2147179C3 (enExample)
FR (1) FR2153437B1 (enExample)
GB (2) GB1413467A (enExample)
IT (1) IT967693B (enExample)
NL (1) NL7212778A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2315374A (en) * 1996-07-12 1998-01-28 Mitsubishi Electric Corp Control apparatus for an AC generator on a vehicle

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3220736A1 (de) * 1981-08-21 1983-04-28 Burr-Brown Research Corp., 85734 Tucson, Ariz. Schaltungsanordnung und verfahren zur sperrstromkompensation bei halbleitern
US4430624A (en) * 1982-06-24 1984-02-07 Motorola, Inc. Current mirror circuit arrangement
GB2135846B (en) * 1983-02-04 1986-03-12 Standard Telephones Cables Ltd Current splitter
JPS6089960A (ja) * 1984-08-06 1985-05-20 Nec Corp 半導体集積回路装置
DE3933433A1 (de) * 1988-11-02 1990-05-03 Bosch Gmbh Robert Stromregler
JP5700896B1 (ja) * 2014-03-20 2015-04-15 株式会社ショーワ カバー部材および緩衝装置
EP3905522A1 (en) * 2020-04-29 2021-11-03 ams International AG Power on reset circuit and integrated circuit including the same

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB769584A (en) * 1954-09-20 1957-03-13 Mullard Radio Valve Co Ltd Improvements in or relating to means for compensating transistor circuit arrangements in relation to external conditions
GB891229A (en) * 1958-10-17 1962-03-14 Advanced Res Associates Inc Circuit for thermal compensation of transistors
US3509362A (en) * 1966-08-19 1970-04-28 Rca Corp Switching circuit

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2315374A (en) * 1996-07-12 1998-01-28 Mitsubishi Electric Corp Control apparatus for an AC generator on a vehicle
GB2315374B (en) * 1996-07-12 1998-08-26 Mitsubishi Electric Corp Control apparatus for ac generator
US5923095A (en) * 1996-07-12 1999-07-13 Mitsubishi Denki Kabushiki Kaisha Control apparatus for onboard AC generator for motor vehicle

Also Published As

Publication number Publication date
IT967693B (it) 1974-03-11
JPS4841681A (enExample) 1973-06-18
FR2153437B1 (enExample) 1976-10-29
DE2147179A1 (de) 1973-03-29
DE2147179B2 (de) 1977-07-28
DE2147179C3 (de) 1984-11-08
FR2153437A1 (enExample) 1973-05-04
GB1413466A (en) 1975-11-12
JPS5823749B2 (ja) 1983-05-17
NL7212778A (enExample) 1973-03-26

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees