GB1389325A - Doping of semi-conductor bodies with boron - Google Patents

Doping of semi-conductor bodies with boron

Info

Publication number
GB1389325A
GB1389325A GB1605972A GB1605972A GB1389325A GB 1389325 A GB1389325 A GB 1389325A GB 1605972 A GB1605972 A GB 1605972A GB 1605972 A GB1605972 A GB 1605972A GB 1389325 A GB1389325 A GB 1389325A
Authority
GB
United Kingdom
Prior art keywords
source
teos
glass
april
solvent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1605972A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semikron GmbH and Co KG
Original Assignee
Semikron GmbH and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19712117179 external-priority patent/DE2117179C3/de
Application filed by Semikron GmbH and Co KG filed Critical Semikron GmbH and Co KG
Publication of GB1389325A publication Critical patent/GB1389325A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
    • H10P32/141—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers the applied layer comprising oxides only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/118—Oxide films

Landscapes

  • Formation Of Insulating Films (AREA)
  • Glass Compositions (AREA)
  • Chemically Coating (AREA)
GB1605972A 1971-04-08 1972-04-07 Doping of semi-conductor bodies with boron Expired GB1389325A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19712117179 DE2117179C3 (de) 1971-04-08 Glasbildende Mischung mit Bor als Dotierungsstoff zur Herstellung von Leitfähigkeitszonen in Halbleiterkörpern mittels Diffusion

Publications (1)

Publication Number Publication Date
GB1389325A true GB1389325A (en) 1975-04-03

Family

ID=5804216

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1605972A Expired GB1389325A (en) 1971-04-08 1972-04-07 Doping of semi-conductor bodies with boron

Country Status (4)

Country Link
US (1) US3928225A (https=)
BR (1) BR7202134D0 (https=)
FR (1) FR2132738B1 (https=)
GB (1) GB1389325A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2209245A (en) * 1987-08-28 1989-05-04 Gen Electric Co Plc Method of producing a three-dimensional structure

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2506457C3 (de) * 1975-02-15 1980-01-24 S.A. Metallurgie Hoboken-Overpelt N.V., Bruessel Verfahren zur Herstellung einer silikatischen Abdeckschicht auf einer Halbleiterscheibe öder auf einer auf ihr befindlichen Schicht
US4152286A (en) * 1977-09-13 1979-05-01 Texas Instruments Incorporated Composition and method for forming a doped oxide film
US4329016A (en) * 1978-06-01 1982-05-11 Hughes Aircraft Company Optical waveguide formed by diffusing metal into substrate
US4206251A (en) * 1978-06-01 1980-06-03 Hughes Aircraft Company Method for diffusing metals into substrates
IT1193733B (it) * 1980-05-30 1988-08-24 Gao Ges Automation Org Carta valori dotata di segni di autenticita sotto forma di sostanze luminescenti procedimento per il controllo della carta valori stessa ed apparecchio per l attuazione di tale procedimento
US4605450A (en) * 1982-02-11 1986-08-12 Owens-Illinois, Inc. Process for forming a doped oxide film and doped semiconductor
US4571366A (en) * 1982-02-11 1986-02-18 Owens-Illinois, Inc. Process for forming a doped oxide film and doped semiconductor
DE3704518A1 (de) 1987-02-13 1988-08-25 Hoechst Ag Beschichtungsloesung und verfahren zur erzeugung glasartiger schichten
US5527872A (en) * 1990-09-14 1996-06-18 At&T Global Information Solutions Company Electronic device with a spin-on glass dielectric layer
US5472488A (en) * 1990-09-14 1995-12-05 Hyundai Electronics America Coating solution for forming glassy layers
US5322805A (en) * 1992-10-16 1994-06-21 Ncr Corporation Method for forming a bipolar emitter using doped SOG
US5308790A (en) * 1992-10-16 1994-05-03 Ncr Corporation Selective sidewall diffusion process using doped SOG
US5340770A (en) * 1992-10-23 1994-08-23 Ncr Corporation Method of making a shallow junction by using first and second SOG layers
US5340752A (en) * 1992-10-23 1994-08-23 Ncr Corporation Method for forming a bipolar transistor using doped SOG
US5312512A (en) * 1992-10-23 1994-05-17 Ncr Corporation Global planarization using SOG and CMP
JP6022243B2 (ja) * 2011-09-12 2016-11-09 東京応化工業株式会社 拡散剤組成物および不純物拡散層の形成方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3084079A (en) * 1960-10-13 1963-04-02 Pacific Semiconductors Inc Manufacture of semiconductor devices
US3300339A (en) * 1962-12-31 1967-01-24 Ibm Method of covering the surfaces of objects with protective glass jackets and the objects produced thereby
GB1180908A (en) * 1966-11-17 1970-02-11 English Electric Co Ltd Improvements in or relating to processes for Forming an Insulating Coating on Silicon, and to Coated Silicon
US3615943A (en) * 1969-11-25 1971-10-26 Milton Genser Deposition of doped and undoped silica films on semiconductor surfaces
JPS4838615B1 (https=) * 1970-02-20 1973-11-19

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2209245A (en) * 1987-08-28 1989-05-04 Gen Electric Co Plc Method of producing a three-dimensional structure

Also Published As

Publication number Publication date
BR7202134D0 (pt) 1973-06-07
FR2132738B1 (https=) 1976-01-16
US3928225A (en) 1975-12-23
FR2132738A1 (https=) 1972-11-24
DE2117179A1 (de) 1972-10-26
DE2117179B2 (de) 1973-10-04

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
435 Patent endorsed 'licences of right' on the date specified (sect. 35/1949)
PCNP Patent ceased through non-payment of renewal fee