BR7202134D0 - Mistura vitrificadora com boro como substancia dotadora para a producao de zonas de condutibilidade em corpos semi-condutores mediante difusao - Google Patents

Mistura vitrificadora com boro como substancia dotadora para a producao de zonas de condutibilidade em corpos semi-condutores mediante difusao

Info

Publication number
BR7202134D0
BR7202134D0 BR2134/72A BR213472A BR7202134D0 BR 7202134 D0 BR7202134 D0 BR 7202134D0 BR 2134/72 A BR2134/72 A BR 2134/72A BR 213472 A BR213472 A BR 213472A BR 7202134 D0 BR7202134 D0 BR 7202134D0
Authority
BR
Brazil
Prior art keywords
vitrificating
conductibility
boron
zones
diffusion
Prior art date
Application number
BR2134/72A
Other languages
English (en)
Portuguese (pt)
Inventor
H Schofer
Original Assignee
Semikron Gleichrichterbau
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19712117179 external-priority patent/DE2117179C3/de
Application filed by Semikron Gleichrichterbau filed Critical Semikron Gleichrichterbau
Publication of BR7202134D0 publication Critical patent/BR7202134D0/pt

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
    • H10P32/141—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers the applied layer comprising oxides only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/118—Oxide films
BR2134/72A 1971-04-08 1972-04-06 Mistura vitrificadora com boro como substancia dotadora para a producao de zonas de condutibilidade em corpos semi-condutores mediante difusao BR7202134D0 (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19712117179 DE2117179C3 (de) 1971-04-08 Glasbildende Mischung mit Bor als Dotierungsstoff zur Herstellung von Leitfähigkeitszonen in Halbleiterkörpern mittels Diffusion

Publications (1)

Publication Number Publication Date
BR7202134D0 true BR7202134D0 (pt) 1973-06-07

Family

ID=5804216

Family Applications (1)

Application Number Title Priority Date Filing Date
BR2134/72A BR7202134D0 (pt) 1971-04-08 1972-04-06 Mistura vitrificadora com boro como substancia dotadora para a producao de zonas de condutibilidade em corpos semi-condutores mediante difusao

Country Status (4)

Country Link
US (1) US3928225A (https=)
BR (1) BR7202134D0 (https=)
FR (1) FR2132738B1 (https=)
GB (1) GB1389325A (https=)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2506457C3 (de) * 1975-02-15 1980-01-24 S.A. Metallurgie Hoboken-Overpelt N.V., Bruessel Verfahren zur Herstellung einer silikatischen Abdeckschicht auf einer Halbleiterscheibe öder auf einer auf ihr befindlichen Schicht
US4152286A (en) * 1977-09-13 1979-05-01 Texas Instruments Incorporated Composition and method for forming a doped oxide film
US4329016A (en) * 1978-06-01 1982-05-11 Hughes Aircraft Company Optical waveguide formed by diffusing metal into substrate
US4206251A (en) * 1978-06-01 1980-06-03 Hughes Aircraft Company Method for diffusing metals into substrates
IT1193733B (it) * 1980-05-30 1988-08-24 Gao Ges Automation Org Carta valori dotata di segni di autenticita sotto forma di sostanze luminescenti procedimento per il controllo della carta valori stessa ed apparecchio per l attuazione di tale procedimento
US4605450A (en) * 1982-02-11 1986-08-12 Owens-Illinois, Inc. Process for forming a doped oxide film and doped semiconductor
US4571366A (en) * 1982-02-11 1986-02-18 Owens-Illinois, Inc. Process for forming a doped oxide film and doped semiconductor
DE3704518A1 (de) 1987-02-13 1988-08-25 Hoechst Ag Beschichtungsloesung und verfahren zur erzeugung glasartiger schichten
GB2209245A (en) * 1987-08-28 1989-05-04 Gen Electric Co Plc Method of producing a three-dimensional structure
US5527872A (en) * 1990-09-14 1996-06-18 At&T Global Information Solutions Company Electronic device with a spin-on glass dielectric layer
US5472488A (en) * 1990-09-14 1995-12-05 Hyundai Electronics America Coating solution for forming glassy layers
US5322805A (en) * 1992-10-16 1994-06-21 Ncr Corporation Method for forming a bipolar emitter using doped SOG
US5308790A (en) * 1992-10-16 1994-05-03 Ncr Corporation Selective sidewall diffusion process using doped SOG
US5340770A (en) * 1992-10-23 1994-08-23 Ncr Corporation Method of making a shallow junction by using first and second SOG layers
US5340752A (en) * 1992-10-23 1994-08-23 Ncr Corporation Method for forming a bipolar transistor using doped SOG
US5312512A (en) * 1992-10-23 1994-05-17 Ncr Corporation Global planarization using SOG and CMP
JP6022243B2 (ja) * 2011-09-12 2016-11-09 東京応化工業株式会社 拡散剤組成物および不純物拡散層の形成方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3084079A (en) * 1960-10-13 1963-04-02 Pacific Semiconductors Inc Manufacture of semiconductor devices
US3300339A (en) * 1962-12-31 1967-01-24 Ibm Method of covering the surfaces of objects with protective glass jackets and the objects produced thereby
GB1180908A (en) * 1966-11-17 1970-02-11 English Electric Co Ltd Improvements in or relating to processes for Forming an Insulating Coating on Silicon, and to Coated Silicon
US3615943A (en) * 1969-11-25 1971-10-26 Milton Genser Deposition of doped and undoped silica films on semiconductor surfaces
JPS4838615B1 (https=) * 1970-02-20 1973-11-19

Also Published As

Publication number Publication date
FR2132738B1 (https=) 1976-01-16
GB1389325A (en) 1975-04-03
US3928225A (en) 1975-12-23
FR2132738A1 (https=) 1972-11-24
DE2117179A1 (de) 1972-10-26
DE2117179B2 (de) 1973-10-04

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