FR2132738B1 - - Google Patents
Info
- Publication number
- FR2132738B1 FR2132738B1 FR7212223A FR7212223A FR2132738B1 FR 2132738 B1 FR2132738 B1 FR 2132738B1 FR 7212223 A FR7212223 A FR 7212223A FR 7212223 A FR7212223 A FR 7212223A FR 2132738 B1 FR2132738 B1 FR 2132738B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
- H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/118—Oxide films
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Glass Compositions (AREA)
- Chemically Coating (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19712117179 DE2117179C3 (de) | 1971-04-08 | Glasbildende Mischung mit Bor als Dotierungsstoff zur Herstellung von Leitfähigkeitszonen in Halbleiterkörpern mittels Diffusion |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2132738A1 FR2132738A1 (fr) | 1972-11-24 |
FR2132738B1 true FR2132738B1 (fr) | 1976-01-16 |
Family
ID=5804216
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7212223A Expired FR2132738B1 (fr) | 1971-04-08 | 1972-04-07 |
Country Status (4)
Country | Link |
---|---|
US (1) | US3928225A (fr) |
BR (1) | BR7202134D0 (fr) |
FR (1) | FR2132738B1 (fr) |
GB (1) | GB1389325A (fr) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2506457C3 (de) * | 1975-02-15 | 1980-01-24 | S.A. Metallurgie Hoboken-Overpelt N.V., Bruessel | Verfahren zur Herstellung einer silikatischen Abdeckschicht auf einer Halbleiterscheibe öder auf einer auf ihr befindlichen Schicht |
US4152286A (en) * | 1977-09-13 | 1979-05-01 | Texas Instruments Incorporated | Composition and method for forming a doped oxide film |
US4329016A (en) * | 1978-06-01 | 1982-05-11 | Hughes Aircraft Company | Optical waveguide formed by diffusing metal into substrate |
US4206251A (en) * | 1978-06-01 | 1980-06-03 | Hughes Aircraft Company | Method for diffusing metals into substrates |
IT1193733B (it) * | 1980-05-30 | 1988-08-24 | Gao Ges Automation Org | Carta valori dotata di segni di autenticita sotto forma di sostanze luminescenti procedimento per il controllo della carta valori stessa ed apparecchio per l attuazione di tale procedimento |
US4571366A (en) * | 1982-02-11 | 1986-02-18 | Owens-Illinois, Inc. | Process for forming a doped oxide film and doped semiconductor |
US4605450A (en) * | 1982-02-11 | 1986-08-12 | Owens-Illinois, Inc. | Process for forming a doped oxide film and doped semiconductor |
DE3704518A1 (de) | 1987-02-13 | 1988-08-25 | Hoechst Ag | Beschichtungsloesung und verfahren zur erzeugung glasartiger schichten |
GB2209245A (en) * | 1987-08-28 | 1989-05-04 | Gen Electric Co Plc | Method of producing a three-dimensional structure |
US5527872A (en) * | 1990-09-14 | 1996-06-18 | At&T Global Information Solutions Company | Electronic device with a spin-on glass dielectric layer |
US5472488A (en) * | 1990-09-14 | 1995-12-05 | Hyundai Electronics America | Coating solution for forming glassy layers |
US5308790A (en) * | 1992-10-16 | 1994-05-03 | Ncr Corporation | Selective sidewall diffusion process using doped SOG |
US5322805A (en) * | 1992-10-16 | 1994-06-21 | Ncr Corporation | Method for forming a bipolar emitter using doped SOG |
US5312512A (en) * | 1992-10-23 | 1994-05-17 | Ncr Corporation | Global planarization using SOG and CMP |
US5340770A (en) * | 1992-10-23 | 1994-08-23 | Ncr Corporation | Method of making a shallow junction by using first and second SOG layers |
US5340752A (en) * | 1992-10-23 | 1994-08-23 | Ncr Corporation | Method for forming a bipolar transistor using doped SOG |
JP6022243B2 (ja) * | 2011-09-12 | 2016-11-09 | 東京応化工業株式会社 | 拡散剤組成物および不純物拡散層の形成方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3084079A (en) * | 1960-10-13 | 1963-04-02 | Pacific Semiconductors Inc | Manufacture of semiconductor devices |
US3300339A (en) * | 1962-12-31 | 1967-01-24 | Ibm | Method of covering the surfaces of objects with protective glass jackets and the objects produced thereby |
GB1180908A (en) * | 1966-11-17 | 1970-02-11 | English Electric Co Ltd | Improvements in or relating to processes for Forming an Insulating Coating on Silicon, and to Coated Silicon |
US3615943A (en) * | 1969-11-25 | 1971-10-26 | Milton Genser | Deposition of doped and undoped silica films on semiconductor surfaces |
JPS4838615B1 (fr) * | 1970-02-20 | 1973-11-19 |
-
1972
- 1972-04-04 US US241070A patent/US3928225A/en not_active Expired - Lifetime
- 1972-04-06 BR BR2134/72A patent/BR7202134D0/pt unknown
- 1972-04-07 FR FR7212223A patent/FR2132738B1/fr not_active Expired
- 1972-04-07 GB GB1605972A patent/GB1389325A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
FR2132738A1 (fr) | 1972-11-24 |
DE2117179A1 (de) | 1972-10-26 |
DE2117179B2 (de) | 1973-10-04 |
US3928225A (en) | 1975-12-23 |
BR7202134D0 (pt) | 1973-06-07 |
GB1389325A (en) | 1975-04-03 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |