FR2132738A1 - - Google Patents

Info

Publication number
FR2132738A1
FR2132738A1 FR7212223A FR7212223A FR2132738A1 FR 2132738 A1 FR2132738 A1 FR 2132738A1 FR 7212223 A FR7212223 A FR 7212223A FR 7212223 A FR7212223 A FR 7212223A FR 2132738 A1 FR2132738 A1 FR 2132738A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7212223A
Other versions
FR2132738B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semikron GmbH and Co KG
Original Assignee
Semikron GmbH and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19712117179 external-priority patent/DE2117179C3/de
Application filed by Semikron GmbH and Co KG filed Critical Semikron GmbH and Co KG
Publication of FR2132738A1 publication Critical patent/FR2132738A1/fr
Application granted granted Critical
Publication of FR2132738B1 publication Critical patent/FR2132738B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/118—Oxide films

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Glass Compositions (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemically Coating (AREA)
FR7212223A 1971-04-08 1972-04-07 Expired FR2132738B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19712117179 DE2117179C3 (de) 1971-04-08 Glasbildende Mischung mit Bor als Dotierungsstoff zur Herstellung von Leitfähigkeitszonen in Halbleiterkörpern mittels Diffusion

Publications (2)

Publication Number Publication Date
FR2132738A1 true FR2132738A1 (fr) 1972-11-24
FR2132738B1 FR2132738B1 (fr) 1976-01-16

Family

ID=5804216

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7212223A Expired FR2132738B1 (fr) 1971-04-08 1972-04-07

Country Status (4)

Country Link
US (1) US3928225A (fr)
BR (1) BR7202134D0 (fr)
FR (1) FR2132738B1 (fr)
GB (1) GB1389325A (fr)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2506457C3 (de) * 1975-02-15 1980-01-24 S.A. Metallurgie Hoboken-Overpelt N.V., Bruessel Verfahren zur Herstellung einer silikatischen Abdeckschicht auf einer Halbleiterscheibe öder auf einer auf ihr befindlichen Schicht
US4152286A (en) * 1977-09-13 1979-05-01 Texas Instruments Incorporated Composition and method for forming a doped oxide film
US4206251A (en) * 1978-06-01 1980-06-03 Hughes Aircraft Company Method for diffusing metals into substrates
US4329016A (en) * 1978-06-01 1982-05-11 Hughes Aircraft Company Optical waveguide formed by diffusing metal into substrate
JPH0212195B2 (fr) * 1980-05-30 1990-03-19 Gee Aa Oo G Fuyuuru Automatsuioon Unto Oruganizatsuioon Mbh
US4571366A (en) * 1982-02-11 1986-02-18 Owens-Illinois, Inc. Process for forming a doped oxide film and doped semiconductor
US4605450A (en) * 1982-02-11 1986-08-12 Owens-Illinois, Inc. Process for forming a doped oxide film and doped semiconductor
DE3704518A1 (de) * 1987-02-13 1988-08-25 Hoechst Ag Beschichtungsloesung und verfahren zur erzeugung glasartiger schichten
GB2209245A (en) * 1987-08-28 1989-05-04 Gen Electric Co Plc Method of producing a three-dimensional structure
US5472488A (en) * 1990-09-14 1995-12-05 Hyundai Electronics America Coating solution for forming glassy layers
US5527872A (en) * 1990-09-14 1996-06-18 At&T Global Information Solutions Company Electronic device with a spin-on glass dielectric layer
US5308790A (en) * 1992-10-16 1994-05-03 Ncr Corporation Selective sidewall diffusion process using doped SOG
US5322805A (en) * 1992-10-16 1994-06-21 Ncr Corporation Method for forming a bipolar emitter using doped SOG
US5340752A (en) * 1992-10-23 1994-08-23 Ncr Corporation Method for forming a bipolar transistor using doped SOG
US5340770A (en) * 1992-10-23 1994-08-23 Ncr Corporation Method of making a shallow junction by using first and second SOG layers
US5312512A (en) * 1992-10-23 1994-05-17 Ncr Corporation Global planarization using SOG and CMP
JP6022243B2 (ja) * 2011-09-12 2016-11-09 東京応化工業株式会社 拡散剤組成物および不純物拡散層の形成方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3084079A (en) * 1960-10-13 1963-04-02 Pacific Semiconductors Inc Manufacture of semiconductor devices
FR2080661A1 (fr) * 1970-02-20 1971-11-19 Bridgestone Tire Co Ltd

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3300339A (en) * 1962-12-31 1967-01-24 Ibm Method of covering the surfaces of objects with protective glass jackets and the objects produced thereby
GB1180908A (en) * 1966-11-17 1970-02-11 English Electric Co Ltd Improvements in or relating to processes for Forming an Insulating Coating on Silicon, and to Coated Silicon
US3615943A (en) * 1969-11-25 1971-10-26 Milton Genser Deposition of doped and undoped silica films on semiconductor surfaces

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3084079A (en) * 1960-10-13 1963-04-02 Pacific Semiconductors Inc Manufacture of semiconductor devices
FR2080661A1 (fr) * 1970-02-20 1971-11-19 Bridgestone Tire Co Ltd

Also Published As

Publication number Publication date
US3928225A (en) 1975-12-23
DE2117179B2 (de) 1973-10-04
BR7202134D0 (pt) 1973-06-07
GB1389325A (en) 1975-04-03
FR2132738B1 (fr) 1976-01-16
DE2117179A1 (de) 1972-10-26

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Legal Events

Date Code Title Description
ST Notification of lapse