GB954915A - Method of stabilising the surface of semi-conductor bodies comprising pn-junctions - Google Patents

Method of stabilising the surface of semi-conductor bodies comprising pn-junctions

Info

Publication number
GB954915A
GB954915A GB5950/61A GB595061A GB954915A GB 954915 A GB954915 A GB 954915A GB 5950/61 A GB5950/61 A GB 5950/61A GB 595061 A GB595061 A GB 595061A GB 954915 A GB954915 A GB 954915A
Authority
GB
United Kingdom
Prior art keywords
germanium
silicon
junction
crucible
rectifier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5950/61A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Publication of GB954915A publication Critical patent/GB954915A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/298—Semiconductor material, e.g. amorphous silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

954,915. Semi-conductor devices. STANDARD TELEPHONES & CABLES Ltd. Feb. 17, 1961 [Feb. 20, 1960; March 19, 1960], No. 5950/61. Heading H1K. A silicon or germanium device containing a PN junction is treated by evaporating on to the surface of the device a layer of high resistivity germanium or silicon respectively so as to cover the junction. In one arrangement the surface of a silicon rectifier comprising a diffused PN junction is cleaned by etching or subjection to a glow discharge and the rectifier mounted on a rotatable support in an evaporation chamber containing a crucible of germanium. After evacuation of the chamber the rectifier is maintained at room temperature and moved relative to the crucible by rotation of the support while the germanium is evaporated. A thin uniform layer of amorphous germanium 50-500 Š thick is thus formed on the device which increases the breakdown voltage by a factor of 5 and stabilizes it. A protective layer of thermosetting resin is then applied to the amorphous layer. In an otherwise similar method high resistivity silicon is evaporated from a tungsten coil or beryllium oxide crucible on to a PN germanium device.
GB5950/61A 1960-02-20 1961-02-17 Method of stabilising the surface of semi-conductor bodies comprising pn-junctions Expired GB954915A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DEST16141A DE1184178B (en) 1960-02-20 1960-02-20 Process for stabilizing the surface of semiconductor bodies with pn junctions by vacuum evaporation
DEST16252A DE1185896B (en) 1960-02-20 1960-03-19 Method for stabilizing the surface of semiconductor bodies with p-n junctions

Publications (1)

Publication Number Publication Date
GB954915A true GB954915A (en) 1964-04-08

Family

ID=25993947

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5950/61A Expired GB954915A (en) 1960-02-20 1961-02-17 Method of stabilising the surface of semi-conductor bodies comprising pn-junctions

Country Status (3)

Country Link
DE (2) DE1184178B (en)
FR (1) FR1280466A (en)
GB (1) GB954915A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4207586A (en) * 1976-12-31 1980-06-10 U.S. Philips Corporation Semiconductor device having a passivating layer

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3979768A (en) * 1966-03-23 1976-09-07 Hitachi, Ltd. Semiconductor element having surface coating comprising silicon nitride and silicon oxide films
JPS6022497B2 (en) * 1974-10-26 1985-06-03 ソニー株式会社 semiconductor equipment
JPS51128268A (en) * 1975-04-30 1976-11-09 Sony Corp Semiconductor unit
FR2335951A1 (en) * 1975-12-19 1977-07-15 Radiotechnique Compelec SEMICONDUCTOR DEVICE WITH A PASSIVE SURFACE AND METHOD OF OBTAINING THE PASSIVATION STRUCTURE
DE2632647A1 (en) * 1976-07-20 1978-01-26 Siemens Ag SEMICONDUCTOR COMPONENT WITH PASSIVATING PROTECTIVE LAYER
US4179528A (en) * 1977-05-18 1979-12-18 Eastman Kodak Company Method of making silicon device with uniformly thick polysilicon
DE2836911C2 (en) * 1978-08-23 1986-11-06 Siemens AG, 1000 Berlin und 8000 München Passivation layer for semiconductor components
DE2922005A1 (en) * 1979-05-30 1980-12-04 Siemens Ag SEMICONDUCTOR COMPONENT WITH PASSIVATED SEMICONDUCTOR BODY
DE2944937A1 (en) * 1979-11-07 1981-06-04 Siemens AG, 1000 Berlin und 8000 München SEMICONDUCTOR COMPONENT
DE3138324A1 (en) * 1981-09-25 1983-04-14 Siemens AG, 1000 Berlin und 8000 München INTEGRATED SEMICONDUCTOR CIRCUIT

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR805066A (en) * 1935-08-02 1936-11-10 Device for the production of deposits by sublimation in vacuum
DE895199C (en) * 1945-04-19 1953-11-02 Telefunken Gmbh Contact detector
US2789258A (en) * 1955-06-29 1957-04-16 Raytheon Mfg Co Intrinsic coatings for semiconductor junctions
DE1057207C2 (en) * 1956-05-31 1961-02-23 Siemens Ag Process for the production of semiconductor layers, in particular for Hall generators
BE562973A (en) * 1956-12-06 1900-01-01
DE1077500B (en) * 1957-03-07 1960-03-10 Degussa Process for coating metals, in particular base metals, with a solder

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4207586A (en) * 1976-12-31 1980-06-10 U.S. Philips Corporation Semiconductor device having a passivating layer

Also Published As

Publication number Publication date
FR1280466A (en) 1961-12-29
DE1185896B (en) 1965-01-21
DE1184178B (en) 1964-12-23

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