GB1384153A - Fabrication of semiconductor devices incorporating polycrystalline silicon - Google Patents
Fabrication of semiconductor devices incorporating polycrystalline siliconInfo
- Publication number
- GB1384153A GB1384153A GB4721772A GB4721772A GB1384153A GB 1384153 A GB1384153 A GB 1384153A GB 4721772 A GB4721772 A GB 4721772A GB 4721772 A GB4721772 A GB 4721772A GB 1384153 A GB1384153 A GB 1384153A
- Authority
- GB
- United Kingdom
- Prior art keywords
- silicon
- semi
- hydrogen
- deposited
- conductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 8
- 229910052710 silicon Inorganic materials 0.000 abstract 8
- 239000010703 silicon Substances 0.000 abstract 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 4
- 239000001257 hydrogen Substances 0.000 abstract 4
- 229910052739 hydrogen Inorganic materials 0.000 abstract 4
- 229910052785 arsenic Inorganic materials 0.000 abstract 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 3
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical compound B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 abstract 2
- 239000002019 doping agent Substances 0.000 abstract 2
- 150000004767 nitrides Chemical class 0.000 abstract 2
- 229910052757 nitrogen Inorganic materials 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 238000000137 annealing Methods 0.000 abstract 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 abstract 1
- 229910000085 borane Inorganic materials 0.000 abstract 1
- 239000000919 ceramic Substances 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 238000000206 photolithography Methods 0.000 abstract 1
- 239000010453 quartz Substances 0.000 abstract 1
- 229910052594 sapphire Inorganic materials 0.000 abstract 1
- 239000010980 sapphire Substances 0.000 abstract 1
- 229910000077 silane Inorganic materials 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 229910052596 spinel Inorganic materials 0.000 abstract 1
- 239000011029 spinel Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
- H10D84/401—Combinations of FETs or IGBTs with BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US19071971A | 1971-10-20 | 1971-10-20 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1384153A true GB1384153A (en) | 1975-02-19 |
Family
ID=22702482
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB4721772A Expired GB1384153A (en) | 1971-10-20 | 1972-10-12 | Fabrication of semiconductor devices incorporating polycrystalline silicon |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS5234193B2 (enrdf_load_stackoverflow) |
CA (1) | CA969290A (enrdf_load_stackoverflow) |
DE (1) | DE2250570A1 (enrdf_load_stackoverflow) |
GB (1) | GB1384153A (enrdf_load_stackoverflow) |
IT (1) | IT968985B (enrdf_load_stackoverflow) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5258360A (en) * | 1975-11-10 | 1977-05-13 | Toshiba Corp | Production of semiconductor device |
NL7612883A (nl) * | 1976-11-19 | 1978-05-23 | Philips Nv | Halfgeleiderinrichting, en werkwijze ter ver- vaardiging daarvan. |
JPS5423386A (en) * | 1977-07-22 | 1979-02-21 | Hitachi Ltd | Manufacture of semiconductor device |
JPS57100949U (enrdf_load_stackoverflow) * | 1980-12-09 | 1982-06-21 | ||
GB8507624D0 (en) * | 1985-03-23 | 1985-05-01 | Standard Telephones Cables Ltd | Semiconductor devices |
JPH07101694B2 (ja) * | 1989-02-08 | 1995-11-01 | 株式会社日立製作所 | 半導体装置の製造方法 |
-
1972
- 1972-09-20 CA CA152,188A patent/CA969290A/en not_active Expired
- 1972-10-12 GB GB4721772A patent/GB1384153A/en not_active Expired
- 1972-10-14 DE DE2250570A patent/DE2250570A1/de active Pending
- 1972-10-16 IT IT30531/72A patent/IT968985B/it active
- 1972-10-19 JP JP47104839A patent/JPS5234193B2/ja not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS4850677A (enrdf_load_stackoverflow) | 1973-07-17 |
JPS5234193B2 (enrdf_load_stackoverflow) | 1977-09-01 |
IT968985B (it) | 1974-03-20 |
CA969290A (en) | 1975-06-10 |
DE2250570A1 (de) | 1973-04-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5324974A (en) | Nitride capped MOSFET for integrated circuits | |
US4521952A (en) | Method of making integrated circuits using metal silicide contacts | |
US4287661A (en) | Method for making an improved polysilicon conductor structure utilizing reactive-ion etching and thermal oxidation | |
US3864817A (en) | Method of making capacitor and resistor for monolithic integrated circuits | |
US4507171A (en) | Method for contacting a narrow width PN junction region | |
US3923559A (en) | Use of trapped hydrogen for annealing metal-oxide-semiconductor devices | |
US4125426A (en) | Method of manufacturing semiconductor device | |
US4442449A (en) | Binary germanium-silicon interconnect and electrode structure for integrated circuits | |
US3761327A (en) | Planar silicon gate mos process | |
US4110125A (en) | Method for fabricating semiconductor devices | |
JPH06507274A (ja) | 準安定第15族合金の酸化物および窒化物および第15族元素の窒化物およびそれらから形成された半導体装置 | |
US3528168A (en) | Method of making a semiconductor device | |
US3837071A (en) | Method of simultaneously making a sigfet and a mosfet | |
EP0076106A2 (en) | Method for producing a bipolar transistor | |
US3653120A (en) | Method of making low resistance polycrystalline silicon contacts to buried collector regions using refractory metal silicides | |
US4169746A (en) | Method for making silicon on sapphire transistor utilizing predeposition of leads | |
US4090915A (en) | Forming patterned polycrystalline silicon | |
US3889359A (en) | Ohmic contacts to silicon | |
EP0111706A1 (en) | Sidewall isolation for gate of field effect transistor and process for the formation thereof | |
US3541676A (en) | Method of forming field-effect transistors utilizing doped insulators as activator source | |
GB1384153A (en) | Fabrication of semiconductor devices incorporating polycrystalline silicon | |
US3749610A (en) | Production of silicon insulated gate and ion implanted field effect transistor | |
US3615942A (en) | Method of making a phosphorus glass passivated transistor | |
US3707410A (en) | Method of manufacturing semiconductor devices | |
US3800411A (en) | Method of forming a stable mnos igfet |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed [section 19, patents act 1949] | ||
PLNP | Patent lapsed through nonpayment of renewal fees |