GB1379414A - Forming an epitaxial layer on a semiconductor substrate - Google Patents

Forming an epitaxial layer on a semiconductor substrate

Info

Publication number
GB1379414A
GB1379414A GB5438072A GB5438072A GB1379414A GB 1379414 A GB1379414 A GB 1379414A GB 5438072 A GB5438072 A GB 5438072A GB 5438072 A GB5438072 A GB 5438072A GB 1379414 A GB1379414 A GB 1379414A
Authority
GB
United Kingdom
Prior art keywords
solution
layer
semiconductor substrate
grown
reservoir
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5438072A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of GB1379414A publication Critical patent/GB1379414A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3418—Phosphides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/263—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using melted materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3442—N-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3444—P-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3446—Transition metal elements; Rare earth elements

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
GB5438072A 1971-11-29 1972-11-24 Forming an epitaxial layer on a semiconductor substrate Expired GB1379414A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US20283771A 1971-11-29 1971-11-29

Publications (1)

Publication Number Publication Date
GB1379414A true GB1379414A (en) 1975-01-02

Family

ID=22751461

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5438072A Expired GB1379414A (en) 1971-11-29 1972-11-24 Forming an epitaxial layer on a semiconductor substrate

Country Status (10)

Country Link
US (1) US3690965A (enExample)
AU (1) AU459386B2 (enExample)
BE (1) BE791927A (enExample)
CA (1) CA954421A (enExample)
DE (1) DE2257834A1 (enExample)
ES (1) ES409385A1 (enExample)
FR (1) FR2162033A1 (enExample)
GB (1) GB1379414A (enExample)
IL (1) IL40925A0 (enExample)
NL (1) NL7215876A (enExample)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2249144C3 (de) * 1971-10-06 1975-09-04 Matsushita Electric Industrial Co. Ltd., Kadoma, Osaka (Japan) 11.09.72 Japan 47-91536 Vorrichtung zum epitaktischen Aufwachsen einer Halbleiterschicht auf ein Substrat
JPS5318151B2 (enExample) * 1971-12-14 1978-06-13
US3767481A (en) * 1972-04-07 1973-10-23 Rca Corp Method for epitaxially growing layers of a semiconductor material from the liquid phase
JPS5342230B2 (enExample) * 1972-10-19 1978-11-09
US3859148A (en) * 1972-12-01 1975-01-07 Bell Telephone Labor Inc Epitaxial crystal growth of group iii-v compound semiconductors from solution
JPS49102652U (enExample) * 1972-12-22 1974-09-04
US3762367A (en) * 1973-01-12 1973-10-02 Handotai Kenkyu Shinkokai Growth apparatus for a liquid growth multi-layer film
JPS5320193B2 (enExample) * 1973-01-25 1978-06-24
JPS49131678A (enExample) * 1973-04-21 1974-12-17
US3853643A (en) * 1973-06-18 1974-12-10 Bell Telephone Labor Inc Epitaxial growth of group iii-v semiconductors from solution
FR2319268A1 (fr) * 1973-07-03 1977-02-18 Radiotechnique Compelec Diode electroluminescente protegee
JPS5418905B2 (enExample) * 1973-10-24 1979-07-11
JPS5120081A (en) * 1974-08-12 1976-02-17 Hitachi Ltd Ketsushoseichohoho oyobi sochi
JPS5515316Y2 (enExample) * 1975-10-09 1980-04-09
JPS5252570A (en) * 1975-10-27 1977-04-27 Hitachi Ltd Device for production of compound semiconductor
JPS55163835A (en) * 1979-06-06 1980-12-20 Toshiba Corp Selective liquid phase growth of on semiconductor region
NL185375C (nl) * 1980-01-16 1990-03-16 Philips Nv Inrichting voor het epitaxiaal aanbrengen van een laag halfgeleidermateriaal.
FR2481325A1 (fr) * 1980-04-23 1981-10-30 Radiotechnique Compelec Nacelle utilisable pour des depots epitaxiques multicouches en phase liquide et procede de depot mettant en jeu ladite nacelle
US4317689A (en) * 1980-07-18 1982-03-02 Honeywell Inc. Mercury containment for liquid phase growth of mercury cadmium telluride from tellurium-rich solution
US4470368A (en) * 1982-03-10 1984-09-11 At&T Bell Laboratories LPE Apparatus with improved thermal geometry
US4574730A (en) * 1984-02-27 1986-03-11 Northern Telecom Limited Melt dispensing liquid phase epitaxy boat
US4547230A (en) * 1984-07-30 1985-10-15 The United States Of America As Represented By The Secretary Of The Air Force LPE Semiconductor material transfer method
JPH0634956B2 (ja) * 1987-08-06 1994-05-11 セントラル硝子株式会社 薄膜のコ−ティング方法およびその装置
IT1231384B (it) * 1988-08-26 1991-12-02 Central Glass Co Ltd Procedimento e dispositivo per rivestire la superficie di una piastra con una pellicola sottile di liquido.
US5223079A (en) * 1991-03-18 1993-06-29 Motorola, Inc. Forming thin liquid phase epitaxial layers
US8193078B2 (en) 2008-10-28 2012-06-05 Athenaeum, Llc Method of integrating epitaxial film onto assembly substrate
US20100102419A1 (en) * 2008-10-28 2010-04-29 Eric Ting-Shan Pan Epitaxy-Level Packaging (ELP) System
US7905197B2 (en) * 2008-10-28 2011-03-15 Athenaeum, Llc Apparatus for making epitaxial film
US8746283B2 (en) 2011-10-03 2014-06-10 Aquasana, Inc. Faucet diverter valves

Also Published As

Publication number Publication date
IL40925A0 (en) 1973-01-30
US3690965A (en) 1972-09-12
FR2162033A1 (enExample) 1973-07-13
CA954421A (en) 1974-09-10
ES409385A1 (es) 1975-12-16
NL7215876A (enExample) 1973-06-01
DE2257834A1 (de) 1973-06-14
AU4936272A (en) 1974-05-30
BE791927A (fr) 1973-03-16
AU459386B2 (en) 1975-03-27

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees