IL40925A0 - Semiconductor epitaxial growth from solution - Google Patents
Semiconductor epitaxial growth from solutionInfo
- Publication number
- IL40925A0 IL40925A0 IL40925A IL4092572A IL40925A0 IL 40925 A0 IL40925 A0 IL 40925A0 IL 40925 A IL40925 A IL 40925A IL 4092572 A IL4092572 A IL 4092572A IL 40925 A0 IL40925 A0 IL 40925A0
- Authority
- IL
- Israel
- Prior art keywords
- solution
- epitaxial growth
- semiconductor epitaxial
- semiconductor
- growth
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02543—Phosphides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02581—Transition metal or rare earth elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02625—Liquid deposition using melted materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US20283771A | 1971-11-29 | 1971-11-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IL40925A0 true IL40925A0 (en) | 1973-01-30 |
Family
ID=22751461
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL40925A IL40925A0 (en) | 1971-11-29 | 1972-11-27 | Semiconductor epitaxial growth from solution |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US3690965A (xx) |
| AU (1) | AU459386B2 (xx) |
| BE (1) | BE791927A (xx) |
| CA (1) | CA954421A (xx) |
| DE (1) | DE2257834A1 (xx) |
| ES (1) | ES409385A1 (xx) |
| FR (1) | FR2162033A1 (xx) |
| GB (1) | GB1379414A (xx) |
| IL (1) | IL40925A0 (xx) |
| NL (1) | NL7215876A (xx) |
Families Citing this family (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL7213557A (xx) * | 1971-10-06 | 1973-04-10 | ||
| JPS5318151B2 (xx) * | 1971-12-14 | 1978-06-13 | ||
| US3767481A (en) * | 1972-04-07 | 1973-10-23 | Rca Corp | Method for epitaxially growing layers of a semiconductor material from the liquid phase |
| JPS5342230B2 (xx) * | 1972-10-19 | 1978-11-09 | ||
| US3859148A (en) * | 1972-12-01 | 1975-01-07 | Bell Telephone Labor Inc | Epitaxial crystal growth of group iii-v compound semiconductors from solution |
| JPS49102652U (xx) * | 1972-12-22 | 1974-09-04 | ||
| US3762367A (en) * | 1973-01-12 | 1973-10-02 | Handotai Kenkyu Shinkokai | Growth apparatus for a liquid growth multi-layer film |
| JPS5320193B2 (xx) * | 1973-01-25 | 1978-06-24 | ||
| JPS49131678A (xx) * | 1973-04-21 | 1974-12-17 | ||
| US3853643A (en) * | 1973-06-18 | 1974-12-10 | Bell Telephone Labor Inc | Epitaxial growth of group iii-v semiconductors from solution |
| FR2319268A1 (fr) * | 1973-07-03 | 1977-02-18 | Radiotechnique Compelec | Diode electroluminescente protegee |
| JPS5418905B2 (xx) * | 1973-10-24 | 1979-07-11 | ||
| JPS5120081A (en) * | 1974-08-12 | 1976-02-17 | Hitachi Ltd | Ketsushoseichohoho oyobi sochi |
| JPS5515316Y2 (xx) * | 1975-10-09 | 1980-04-09 | ||
| JPS5252570A (en) * | 1975-10-27 | 1977-04-27 | Hitachi Ltd | Device for production of compound semiconductor |
| JPS55163835A (en) * | 1979-06-06 | 1980-12-20 | Toshiba Corp | Selective liquid phase growth of on semiconductor region |
| NL185375C (nl) * | 1980-01-16 | 1990-03-16 | Philips Nv | Inrichting voor het epitaxiaal aanbrengen van een laag halfgeleidermateriaal. |
| FR2481325A1 (fr) * | 1980-04-23 | 1981-10-30 | Radiotechnique Compelec | Nacelle utilisable pour des depots epitaxiques multicouches en phase liquide et procede de depot mettant en jeu ladite nacelle |
| US4317689A (en) * | 1980-07-18 | 1982-03-02 | Honeywell Inc. | Mercury containment for liquid phase growth of mercury cadmium telluride from tellurium-rich solution |
| US4470368A (en) * | 1982-03-10 | 1984-09-11 | At&T Bell Laboratories | LPE Apparatus with improved thermal geometry |
| US4574730A (en) * | 1984-02-27 | 1986-03-11 | Northern Telecom Limited | Melt dispensing liquid phase epitaxy boat |
| US4547230A (en) * | 1984-07-30 | 1985-10-15 | The United States Of America As Represented By The Secretary Of The Air Force | LPE Semiconductor material transfer method |
| JPH0634956B2 (ja) * | 1987-08-06 | 1994-05-11 | セントラル硝子株式会社 | 薄膜のコ−ティング方法およびその装置 |
| IT1231384B (it) * | 1988-08-26 | 1991-12-02 | Central Glass Co Ltd | Procedimento e dispositivo per rivestire la superficie di una piastra con una pellicola sottile di liquido. |
| US5223079A (en) * | 1991-03-18 | 1993-06-29 | Motorola, Inc. | Forming thin liquid phase epitaxial layers |
| US20100102419A1 (en) * | 2008-10-28 | 2010-04-29 | Eric Ting-Shan Pan | Epitaxy-Level Packaging (ELP) System |
| US7905197B2 (en) * | 2008-10-28 | 2011-03-15 | Athenaeum, Llc | Apparatus for making epitaxial film |
| US8193078B2 (en) | 2008-10-28 | 2012-06-05 | Athenaeum, Llc | Method of integrating epitaxial film onto assembly substrate |
| US8746283B2 (en) | 2011-10-03 | 2014-06-10 | Aquasana, Inc. | Faucet diverter valves |
-
0
- BE BE791927D patent/BE791927A/xx unknown
-
1971
- 1971-11-29 US US202837A patent/US3690965A/en not_active Expired - Lifetime
-
1972
- 1972-06-07 CA CA144,097A patent/CA954421A/en not_active Expired
- 1972-11-23 NL NL7215876A patent/NL7215876A/xx unknown
- 1972-11-24 GB GB5438072A patent/GB1379414A/en not_active Expired
- 1972-11-25 DE DE2257834A patent/DE2257834A1/de active Pending
- 1972-11-27 IL IL40925A patent/IL40925A0/xx unknown
- 1972-11-28 AU AU49362/72A patent/AU459386B2/en not_active Expired
- 1972-11-28 FR FR7242302A patent/FR2162033A1/fr not_active Withdrawn
- 1972-11-29 ES ES409385A patent/ES409385A1/es not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| NL7215876A (xx) | 1973-06-01 |
| US3690965A (en) | 1972-09-12 |
| AU4936272A (en) | 1974-05-30 |
| CA954421A (en) | 1974-09-10 |
| FR2162033A1 (xx) | 1973-07-13 |
| DE2257834A1 (de) | 1973-06-14 |
| GB1379414A (en) | 1975-01-02 |
| BE791927A (fr) | 1973-03-16 |
| ES409385A1 (es) | 1975-12-16 |
| AU459386B2 (en) | 1975-03-27 |
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