GB1491436A - Method of making a negative resistance diode - Google Patents

Method of making a negative resistance diode

Info

Publication number
GB1491436A
GB1491436A GB3013176A GB3013176A GB1491436A GB 1491436 A GB1491436 A GB 1491436A GB 3013176 A GB3013176 A GB 3013176A GB 3013176 A GB3013176 A GB 3013176A GB 1491436 A GB1491436 A GB 1491436A
Authority
GB
United Kingdom
Prior art keywords
region
avalanche
highly doped
making
negative resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3013176A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Raytheon Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Raytheon Co filed Critical Raytheon Co
Publication of GB1491436A publication Critical patent/GB1491436A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/864—Transit-time diodes, e.g. IMPATT, TRAPATT diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/868—PIN diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • H01L29/365—Planar doping, e.g. atomic-plane doping, delta-doping

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Light Receiving Elements (AREA)

Abstract

1491436 Avalanche transit-time diodes RAYTHEON CO 20 July 1976 [13 Aug 1975] 30131/76 Heading H1K The subject-matter of this Specification is identical with that described in parent Specification 1,491,435, but the claims are concerned with a method of making a negative resistance diode including a highly doped region of the same conductivity type as the avalanche region and a drift region and being more highly doped than, and located between, the avalanche and drift regions, the method comprising the steps of vapour depositing a drift region layer of a semi-conductor material on a substrate, and during the vapour deposition, vapour depositing a predetermined quantity of dopant material on the drift region to form the said highly doped region, and depositing the avalanche region on the highly doped region.
GB3013176A 1975-08-13 1976-07-20 Method of making a negative resistance diode Expired GB1491436A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US60437875A 1975-08-13 1975-08-13

Publications (1)

Publication Number Publication Date
GB1491436A true GB1491436A (en) 1977-11-09

Family

ID=24419365

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3013176A Expired GB1491436A (en) 1975-08-13 1976-07-20 Method of making a negative resistance diode

Country Status (3)

Country Link
CA (1) CA1066429A (en)
DE (1) DE2636569A1 (en)
GB (1) GB1491436A (en)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3356866A (en) * 1966-08-17 1967-12-05 Bell Telephone Labor Inc Apparatus employing avalanche transit time diode

Also Published As

Publication number Publication date
DE2636569A1 (en) 1977-02-24
CA1066429A (en) 1979-11-13

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee