GB1360770A - N-channel mos transistor - Google Patents

N-channel mos transistor

Info

Publication number
GB1360770A
GB1360770A GB2373173A GB2373173A GB1360770A GB 1360770 A GB1360770 A GB 1360770A GB 2373173 A GB2373173 A GB 2373173A GB 2373173 A GB2373173 A GB 2373173A GB 1360770 A GB1360770 A GB 1360770A
Authority
GB
United Kingdom
Prior art keywords
layer
gate
type
mos transistor
channel mos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2373173A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Westinghouse Electric Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of GB1360770A publication Critical patent/GB1360770A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Solid State Image Pick-Up Elements (AREA)
GB2373173A 1972-05-30 1973-05-18 N-channel mos transistor Expired GB1360770A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US25758572A 1972-05-30 1972-05-30

Publications (1)

Publication Number Publication Date
GB1360770A true GB1360770A (en) 1974-07-24

Family

ID=22976889

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2373173A Expired GB1360770A (en) 1972-05-30 1973-05-18 N-channel mos transistor

Country Status (4)

Country Link
JP (1) JPS4957777A (enrdf_load_stackoverflow)
DE (1) DE2326410A1 (enrdf_load_stackoverflow)
FR (1) FR2186737B1 (enrdf_load_stackoverflow)
GB (1) GB1360770A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1540450A (en) * 1975-10-29 1979-02-14 Intel Corp Self-aligning double polycrystalline silicon etching process
US4104675A (en) * 1977-06-21 1978-08-01 International Business Machines Corporation Moderate field hole and electron injection from one interface of MIM or MIS structures
JP4662507B1 (ja) * 2009-11-05 2011-03-30 株式会社椿本チエイン 噛合チェーン

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ZA713663B (en) * 1970-07-06 1972-01-26 Itt N-channel enhancement mode silicon gate transistor
NL7111459A (enrdf_load_stackoverflow) * 1970-08-21 1972-02-23

Also Published As

Publication number Publication date
FR2186737A1 (enrdf_load_stackoverflow) 1974-01-11
FR2186737B1 (enrdf_load_stackoverflow) 1978-02-10
DE2326410A1 (de) 1973-12-13
JPS4957777A (enrdf_load_stackoverflow) 1974-06-05

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee