FR2103427A1 - - Google Patents

Info

Publication number
FR2103427A1
FR2103427A1 FR7130302A FR7130302A FR2103427A1 FR 2103427 A1 FR2103427 A1 FR 2103427A1 FR 7130302 A FR7130302 A FR 7130302A FR 7130302 A FR7130302 A FR 7130302A FR 2103427 A1 FR2103427 A1 FR 2103427A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7130302A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of FR2103427A1 publication Critical patent/FR2103427A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/83135—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] the IGFETs characterised by having different gate conductor materials or different gate conductor implants
FR7130302A 1970-08-21 1971-08-19 Withdrawn FR2103427A1 (enrdf_load_stackoverflow)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US6585870A 1970-08-21 1970-08-21
US6585970A 1970-08-21 1970-08-21

Publications (1)

Publication Number Publication Date
FR2103427A1 true FR2103427A1 (enrdf_load_stackoverflow) 1972-04-14

Family

ID=26746091

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7130302A Withdrawn FR2103427A1 (enrdf_load_stackoverflow) 1970-08-21 1971-08-19

Country Status (5)

Country Link
AU (1) AU3258271A (enrdf_load_stackoverflow)
BE (1) BE771608A (enrdf_load_stackoverflow)
DE (2) DE2142050A1 (enrdf_load_stackoverflow)
FR (1) FR2103427A1 (enrdf_load_stackoverflow)
NL (1) NL7111459A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2186737A1 (enrdf_load_stackoverflow) * 1972-05-30 1974-01-11 Westinghouse Electric Corp
FR2447036A1 (fr) * 1978-03-08 1980-08-14 Hitachi Ltd Dispositif generateur de tension de reference

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3943542A (en) * 1974-11-06 1976-03-09 International Business Machines, Corporation High reliability, low leakage, self-aligned silicon gate FET and method of fabricating same
US5159260A (en) * 1978-03-08 1992-10-27 Hitachi, Ltd. Reference voltage generator device
JPS55132055A (en) * 1979-03-30 1980-10-14 Nec Corp Mos integrated circuit
US5260593A (en) * 1991-12-10 1993-11-09 Micron Technology, Inc. Semiconductor floating gate device having improved channel-floating gate interaction

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2186737A1 (enrdf_load_stackoverflow) * 1972-05-30 1974-01-11 Westinghouse Electric Corp
FR2447036A1 (fr) * 1978-03-08 1980-08-14 Hitachi Ltd Dispositif generateur de tension de reference

Also Published As

Publication number Publication date
AU3258271A (en) 1973-02-22
NL7111459A (enrdf_load_stackoverflow) 1972-02-23
DE7132084U (de) 1972-01-05
BE771608A (fr) 1972-02-21
DE2142050A1 (de) 1972-03-30

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Legal Events

Date Code Title Description
ST Notification of lapse