FR2186737A1 - - Google Patents
Info
- Publication number
- FR2186737A1 FR2186737A1 FR7319890A FR7319890A FR2186737A1 FR 2186737 A1 FR2186737 A1 FR 2186737A1 FR 7319890 A FR7319890 A FR 7319890A FR 7319890 A FR7319890 A FR 7319890A FR 2186737 A1 FR2186737 A1 FR 2186737A1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US25758572A | 1972-05-30 | 1972-05-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2186737A1 true FR2186737A1 (enrdf_load_stackoverflow) | 1974-01-11 |
FR2186737B1 FR2186737B1 (enrdf_load_stackoverflow) | 1978-02-10 |
Family
ID=22976889
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7319890A Expired FR2186737B1 (enrdf_load_stackoverflow) | 1972-05-30 | 1973-05-30 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPS4957777A (enrdf_load_stackoverflow) |
DE (1) | DE2326410A1 (enrdf_load_stackoverflow) |
FR (1) | FR2186737B1 (enrdf_load_stackoverflow) |
GB (1) | GB1360770A (enrdf_load_stackoverflow) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2330146A1 (fr) * | 1975-10-29 | 1977-05-27 | Intel Corp | Procede de gravure a alignement automatique d'une couche double de silicium polycristallin |
FR2395604A1 (fr) * | 1977-06-21 | 1979-01-19 | Ibm | Procede d'injection d'electrons et de trous a partir d'une interface de type mis ou mim sous l'effet d'un champ modere et structure en resultant |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4662507B1 (ja) * | 2009-11-05 | 2011-03-30 | 株式会社椿本チエイン | 噛合チェーン |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2098185A3 (enrdf_load_stackoverflow) * | 1970-07-06 | 1972-03-10 | Itt | |
FR2103427A1 (enrdf_load_stackoverflow) * | 1970-08-21 | 1972-04-14 | Motorola Inc |
-
1973
- 1973-05-18 GB GB2373173A patent/GB1360770A/en not_active Expired
- 1973-05-24 DE DE2326410A patent/DE2326410A1/de active Pending
- 1973-05-30 FR FR7319890A patent/FR2186737B1/fr not_active Expired
- 1973-05-30 JP JP48059885A patent/JPS4957777A/ja active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2098185A3 (enrdf_load_stackoverflow) * | 1970-07-06 | 1972-03-10 | Itt | |
FR2103427A1 (enrdf_load_stackoverflow) * | 1970-08-21 | 1972-04-14 | Motorola Inc |
Non-Patent Citations (3)
Title |
---|
(PUBLICATION AMERICAINE "THE ELECTROCHEMICAL SOCIETY EXTENDED ABSTRACTS", SPRING MUTING, HOUSTON, TEXAS, 7-11 MAI 1972, "N-CHANNEL SI-GATE MOST'S USING AL2O3 * |
NEANT * |
SIO2 DOUBLE LAYER", HISAO KATTO, PAGES 102-103) * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2330146A1 (fr) * | 1975-10-29 | 1977-05-27 | Intel Corp | Procede de gravure a alignement automatique d'une couche double de silicium polycristallin |
FR2395604A1 (fr) * | 1977-06-21 | 1979-01-19 | Ibm | Procede d'injection d'electrons et de trous a partir d'une interface de type mis ou mim sous l'effet d'un champ modere et structure en resultant |
Also Published As
Publication number | Publication date |
---|---|
JPS4957777A (enrdf_load_stackoverflow) | 1974-06-05 |
DE2326410A1 (de) | 1973-12-13 |
GB1360770A (en) | 1974-07-24 |
FR2186737B1 (enrdf_load_stackoverflow) | 1978-02-10 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |