FR2395604A1 - Procede d'injection d'electrons et de trous a partir d'une interface de type mis ou mim sous l'effet d'un champ modere et structure en resultant - Google Patents

Procede d'injection d'electrons et de trous a partir d'une interface de type mis ou mim sous l'effet d'un champ modere et structure en resultant

Info

Publication number
FR2395604A1
FR2395604A1 FR7804977A FR7804977A FR2395604A1 FR 2395604 A1 FR2395604 A1 FR 2395604A1 FR 7804977 A FR7804977 A FR 7804977A FR 7804977 A FR7804977 A FR 7804977A FR 2395604 A1 FR2395604 A1 FR 2395604A1
Authority
FR
France
Prior art keywords
holes
mis
interface
electrons
effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7804977A
Other languages
English (en)
Other versions
FR2395604B1 (fr
Inventor
Donelli J Dimaria
Donald R Young
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2395604A1 publication Critical patent/FR2395604A1/fr
Application granted granted Critical
Publication of FR2395604B1 publication Critical patent/FR2395604B1/fr
Granted legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/3115—Doping the insulating layers
    • H01L21/31155—Doping the insulating layers by ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
    • H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/94—Metal-insulator-semiconductors, e.g. MOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

Procédé d'injection d'électrons et de trous à partir d'une interface de type MIS ou MIM sous l'effet d'un champ modéré et structure en résultant. La présente invention concerne une structure à intervalle de bandes graduel pour créer un dispositif d'emmagasinage de charges dans lequel l'injection de trous ou d'électrons à partir d'un contact est possible sans besoin de compenser l'injection d'électrons ou de trous à partir de l'autre contact. Elle peut être fabriquée en déposant plusieurs couches de SiO 2 thermique relativement épaisse, les couches de SiO2 pyrolytique ayant des contenus en silicium en excès croissants. On peut également fabriquer la structure par une implantation ionique appropriée dans la couche de SiO2 thermique près de l'interface. Application à la fabrication des dispositifs à semi-conducteurs et plus particulièrement d'éléments de mémoire à emmagasinage de charges.
FR7804977A 1977-06-21 1978-02-15 Procede d'injection d'electrons et de trous a partir d'une interface de type mis ou mim sous l'effet d'un champ modere et structure en resultant Granted FR2395604A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/808,501 US4104675A (en) 1977-06-21 1977-06-21 Moderate field hole and electron injection from one interface of MIM or MIS structures

Publications (2)

Publication Number Publication Date
FR2395604A1 true FR2395604A1 (fr) 1979-01-19
FR2395604B1 FR2395604B1 (fr) 1980-03-14

Family

ID=25198955

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7804977A Granted FR2395604A1 (fr) 1977-06-21 1978-02-15 Procede d'injection d'electrons et de trous a partir d'une interface de type mis ou mim sous l'effet d'un champ modere et structure en resultant

Country Status (5)

Country Link
US (2) US4104675A (fr)
JP (1) JPS548479A (fr)
DE (1) DE2810597C2 (fr)
FR (1) FR2395604A1 (fr)
GB (1) GB1596445A (fr)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4104675A (en) * 1977-06-21 1978-08-01 International Business Machines Corporation Moderate field hole and electron injection from one interface of MIM or MIS structures
US4323910A (en) * 1977-11-28 1982-04-06 Rca Corporation MNOS Memory transistor
USRE31083E (en) * 1979-02-15 1982-11-16 International Business Machines Corporation Non-volatile memory devices fabricated from graded or stepped energy band gap insulator MIM or MIS structure
US4217601A (en) * 1979-02-15 1980-08-12 International Business Machines Corporation Non-volatile memory devices fabricated from graded or stepped energy band gap insulator MIM or MIS structure
US4291328A (en) * 1979-06-15 1981-09-22 Texas Instruments Incorporated Interlevel insulator for integrated circuit with implanted resistor element in second-level polycrystalline silicon
JPS5642375A (en) * 1979-08-31 1981-04-20 Fujitsu Ltd Semiconductor nonvolatile memory
US4334347A (en) * 1979-10-19 1982-06-15 Rca Corporation Method of forming an improved gate member for a gate injected floating gate memory device
US4253106A (en) * 1979-10-19 1981-02-24 Rca Corporation Gate injected floating gate memory device
EP0034653B1 (fr) * 1980-02-25 1984-05-16 International Business Machines Corporation Structures à double injecteur d'électrons
US4334292A (en) * 1980-05-27 1982-06-08 International Business Machines Corp. Low voltage electrically erasable programmable read only memory
US4336603A (en) * 1980-06-18 1982-06-22 International Business Machines Corp. Three terminal electrically erasable programmable read only memory
US4375085A (en) * 1981-01-02 1983-02-22 International Business Machines Corporation Dense electrically alterable read only memory
US4472726A (en) * 1981-05-06 1984-09-18 The United States Of America As Represented By The Secretary Of The Air Force Two carrier dual injector apparatus
DE3279138D1 (en) * 1981-12-14 1988-11-24 Ibm Dual electron injector structure and semiconductor memory device including a dual electron injector structure
US4729115A (en) * 1984-09-27 1988-03-01 International Business Machines Corporation Non-volatile dynamic random access memory cell
US4665417A (en) * 1984-09-27 1987-05-12 International Business Machines Corporation Non-volatile dynamic random access memory cell
JPS6180866A (ja) * 1984-09-27 1986-04-24 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 不揮発性半導体メモリ・セル
US4752812A (en) * 1987-01-12 1988-06-21 International Business Machines Corporation Permeable-base transistor
US4870470A (en) * 1987-10-16 1989-09-26 International Business Machines Corporation Non-volatile memory cell having Si rich silicon nitride charge trapping layer
CA1276314C (fr) * 1988-03-24 1990-11-13 Alexander Kalnitsky Dispositif a semiconducteur a ions de silicium implantes
DE69107262D1 (de) * 1990-03-20 1995-03-23 Fujitsu Ltd Elektronische anordnung mit stromkanal aus dielektrischem material.
US5432749A (en) * 1994-04-26 1995-07-11 National Semiconductor Corporation Non-volatile memory cell having hole confinement layer for reducing band-to-band tunneling
TW335503B (en) * 1996-02-23 1998-07-01 Semiconductor Energy Lab Kk Semiconductor thin film and manufacturing method and semiconductor device and its manufacturing method
TW374196B (en) 1996-02-23 1999-11-11 Semiconductor Energy Lab Co Ltd Semiconductor thin film and method for manufacturing the same and semiconductor device and method for manufacturing the same
US6548825B1 (en) 1999-06-04 2003-04-15 Matsushita Electric Industrial Co., Ltd. Semiconductor device including barrier layer having dispersed particles
US20090032861A1 (en) * 2007-07-30 2009-02-05 Zhong Dong Nonvolatile memories with charge trapping layers containing silicon nitride with germanium or phosphorus
US20090140318A1 (en) * 2007-12-03 2009-06-04 Zhong Dong Nonvolatile memories with higher conduction-band edge adjacent to charge-trapping dielectric
US20110039034A1 (en) * 2009-08-11 2011-02-17 Helen Maynard Pulsed deposition and recrystallization and tandem solar cell design utilizing crystallized/amorphous material

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3649884A (en) * 1969-06-06 1972-03-14 Nippon Electric Co Field effect semiconductor device with memory function
FR2186737A1 (fr) * 1972-05-30 1974-01-11 Westinghouse Electric Corp

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE756782A (fr) * 1969-10-03 1971-03-01 Western Electric Co Organe de memoire ayant une structure comportant deux couches isolantesentre un semiconducteur et une couche de metal
US3972059A (en) * 1973-12-28 1976-07-27 International Business Machines Corporation Dielectric diode, fabrication thereof, and charge store memory therewith
US4047974A (en) * 1975-12-30 1977-09-13 Hughes Aircraft Company Process for fabricating non-volatile field effect semiconductor memory structure utilizing implanted ions to induce trapping states
US4104675A (en) * 1977-06-21 1978-08-01 International Business Machines Corporation Moderate field hole and electron injection from one interface of MIM or MIS structures
US4217601A (en) * 1979-02-15 1980-08-12 International Business Machines Corporation Non-volatile memory devices fabricated from graded or stepped energy band gap insulator MIM or MIS structure

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3649884A (en) * 1969-06-06 1972-03-14 Nippon Electric Co Field effect semiconductor device with memory function
FR2186737A1 (fr) * 1972-05-30 1974-01-11 Westinghouse Electric Corp

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
EXRV/76 *
NV2010/71 *

Also Published As

Publication number Publication date
DE2810597C2 (de) 1987-03-05
US4104675A (en) 1978-08-01
USRE31734E (en) 1984-11-13
JPS548479A (en) 1979-01-22
GB1596445A (en) 1981-08-26
FR2395604B1 (fr) 1980-03-14
DE2810597A1 (de) 1979-01-11
JPS5544468B2 (fr) 1980-11-12

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