BE771608A - Transistor a effet de champ et procede pour le former - Google Patents
Transistor a effet de champ et procede pour le formerInfo
- Publication number
- BE771608A BE771608A BE771608A BE771608A BE771608A BE 771608 A BE771608 A BE 771608A BE 771608 A BE771608 A BE 771608A BE 771608 A BE771608 A BE 771608A BE 771608 A BE771608 A BE 771608A
- Authority
- BE
- Belgium
- Prior art keywords
- forming
- field
- effect transistor
- transistor
- effect
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/83135—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] the IGFETs characterised by having different gate conductor materials or different gate conductor implants
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US6585870A | 1970-08-21 | 1970-08-21 | |
| US6585970A | 1970-08-21 | 1970-08-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE771608A true BE771608A (fr) | 1972-02-21 |
Family
ID=26746091
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE771608A BE771608A (fr) | 1970-08-21 | 1971-08-20 | Transistor a effet de champ et procede pour le former |
Country Status (5)
| Country | Link |
|---|---|
| AU (1) | AU3258271A (enrdf_load_stackoverflow) |
| BE (1) | BE771608A (enrdf_load_stackoverflow) |
| DE (2) | DE2142050A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2103427A1 (enrdf_load_stackoverflow) |
| NL (1) | NL7111459A (enrdf_load_stackoverflow) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1360770A (en) * | 1972-05-30 | 1974-07-24 | Westinghouse Electric Corp | N-channel mos transistor |
| US3943542A (en) * | 1974-11-06 | 1976-03-09 | International Business Machines, Corporation | High reliability, low leakage, self-aligned silicon gate FET and method of fabricating same |
| CH657712A5 (de) * | 1978-03-08 | 1986-09-15 | Hitachi Ltd | Referenzspannungserzeuger. |
| US5159260A (en) * | 1978-03-08 | 1992-10-27 | Hitachi, Ltd. | Reference voltage generator device |
| JPS55132055A (en) * | 1979-03-30 | 1980-10-14 | Nec Corp | Mos integrated circuit |
| US5260593A (en) * | 1991-12-10 | 1993-11-09 | Micron Technology, Inc. | Semiconductor floating gate device having improved channel-floating gate interaction |
-
1971
- 1971-08-19 FR FR7130302A patent/FR2103427A1/fr not_active Withdrawn
- 1971-08-19 NL NL7111459A patent/NL7111459A/xx unknown
- 1971-08-20 BE BE771608A patent/BE771608A/xx unknown
- 1971-08-20 AU AU32582/71A patent/AU3258271A/en not_active Expired
- 1971-08-21 DE DE19712142050 patent/DE2142050A1/de active Pending
- 1971-08-21 DE DE19717132084U patent/DE7132084U/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| AU3258271A (en) | 1973-02-22 |
| NL7111459A (enrdf_load_stackoverflow) | 1972-02-23 |
| DE7132084U (de) | 1972-01-05 |
| FR2103427A1 (enrdf_load_stackoverflow) | 1972-04-14 |
| DE2142050A1 (de) | 1972-03-30 |
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