GB1349833A - Production of thin films of tantalum - Google Patents

Production of thin films of tantalum

Info

Publication number
GB1349833A
GB1349833A GB755772A GB755772A GB1349833A GB 1349833 A GB1349833 A GB 1349833A GB 755772 A GB755772 A GB 755772A GB 755772 A GB755772 A GB 755772A GB 1349833 A GB1349833 A GB 1349833A
Authority
GB
United Kingdom
Prior art keywords
film
sputtering
inert gas
cathode
diameter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB755772A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of GB1349833A publication Critical patent/GB1349833A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/702—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof of thick-or thin-film circuits or parts thereof
    • H01L21/707—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof of thick-or thin-film circuits or parts thereof of thin-film circuits or parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N97/00—Electric solid-state thin-film or thick-film devices, not otherwise provided for

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Chemical Vapour Deposition (AREA)
GB755772A 1971-03-08 1972-02-18 Production of thin films of tantalum Expired GB1349833A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2110987A DE2110987B2 (de) 1971-03-08 1971-03-08 Verfahren zum Herstellen von dünnen Schichten aus Tantal

Publications (1)

Publication Number Publication Date
GB1349833A true GB1349833A (en) 1974-04-10

Family

ID=5800841

Family Applications (1)

Application Number Title Priority Date Filing Date
GB755772A Expired GB1349833A (en) 1971-03-08 1972-02-18 Production of thin films of tantalum

Country Status (7)

Country Link
US (1) US3808109A (enExample)
BE (1) BE780373A (enExample)
DE (1) DE2110987B2 (enExample)
FR (1) FR2128643B1 (enExample)
GB (1) GB1349833A (enExample)
IT (1) IT949790B (enExample)
NL (1) NL7202035A (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4046712A (en) * 1972-11-30 1977-09-06 United Kingdom Atomic Energy Authority Catalysts sputtered on substantially nonporous low surface area particulate supports
US3874922A (en) * 1973-08-16 1975-04-01 Boeing Co Tantalum thin film resistors by reactive evaporation
US4036708A (en) * 1976-05-13 1977-07-19 Bell Telephone Laboratories, Incorporated Technique for nucleating b.c.c. tantalum films on insulating substrates
JPS5671821A (en) 1979-11-14 1981-06-15 Hitachi Ltd Substrate for magnetic disc and its manufacture
EP0582387B1 (en) * 1992-08-05 1999-05-26 Sharp Kabushiki Kaisha Metallic wiring board and method for producing the same
EP2423158A1 (en) * 2004-03-24 2012-02-29 H. C. Starck Inc Methods of forming alpha and beta tantalum films with controlled and new microstructures
DE112006004000A5 (de) * 2006-06-16 2009-05-20 Siemens Aktiengesellschaft Thermisch beanspruchbares Bauteil mit einer Korrosionsschihct und Verfahren zu dessen Herstellung
CN113235060B (zh) * 2021-05-12 2023-01-06 中国兵器工业第五九研究所 一种全α相钽涂层的制备方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1665571B1 (de) * 1966-03-08 1971-09-09 Siemens Ag Verfahren zur herstellung von duennschichtbaugruppen der elektronik

Also Published As

Publication number Publication date
IT949790B (it) 1973-06-11
US3808109A (en) 1974-04-30
BE780373A (fr) 1972-07-03
DE2110987B2 (de) 1978-11-16
DE2110987A1 (de) 1972-09-14
FR2128643B1 (enExample) 1977-04-01
FR2128643A1 (enExample) 1972-10-20
NL7202035A (enExample) 1972-09-12

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee