DE2110987B2 - Verfahren zum Herstellen von dünnen Schichten aus Tantal - Google Patents

Verfahren zum Herstellen von dünnen Schichten aus Tantal

Info

Publication number
DE2110987B2
DE2110987B2 DE2110987A DE2110987A DE2110987B2 DE 2110987 B2 DE2110987 B2 DE 2110987B2 DE 2110987 A DE2110987 A DE 2110987A DE 2110987 A DE2110987 A DE 2110987A DE 2110987 B2 DE2110987 B2 DE 2110987B2
Authority
DE
Germany
Prior art keywords
tantalum
atomization
layers
pressure
torr
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE2110987A
Other languages
German (de)
English (en)
Other versions
DE2110987A1 (de
Inventor
Alois Dr. 8022 Gruenwald Schauer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE2110987A priority Critical patent/DE2110987B2/de
Priority to NL7202035A priority patent/NL7202035A/xx
Priority to GB755772A priority patent/GB1349833A/en
Priority to IT21293/72A priority patent/IT949790B/it
Priority to FR7207645A priority patent/FR2128643B1/fr
Priority to US00232373A priority patent/US3808109A/en
Priority to BE780373A priority patent/BE780373A/xx
Publication of DE2110987A1 publication Critical patent/DE2110987A1/de
Publication of DE2110987B2 publication Critical patent/DE2110987B2/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/702—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof of thick-or thin-film circuits or parts thereof
    • H01L21/707—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof of thick-or thin-film circuits or parts thereof of thin-film circuits or parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N97/00—Electric solid-state thin-film or thick-film devices, not otherwise provided for

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Chemical Vapour Deposition (AREA)
DE2110987A 1971-03-08 1971-03-08 Verfahren zum Herstellen von dünnen Schichten aus Tantal Withdrawn DE2110987B2 (de)

Priority Applications (7)

Application Number Priority Date Filing Date Title
DE2110987A DE2110987B2 (de) 1971-03-08 1971-03-08 Verfahren zum Herstellen von dünnen Schichten aus Tantal
NL7202035A NL7202035A (enExample) 1971-03-08 1972-02-16
GB755772A GB1349833A (en) 1971-03-08 1972-02-18 Production of thin films of tantalum
IT21293/72A IT949790B (it) 1971-03-08 1972-03-02 Procedimento per preparare sottili strati di tantalio
FR7207645A FR2128643B1 (enExample) 1971-03-08 1972-03-06
US00232373A US3808109A (en) 1971-03-08 1972-03-07 Method of producing pure alpha tantalum films by cathode sputtering
BE780373A BE780373A (fr) 1971-03-08 1972-03-08 Procede de fabrication de couches en tantale

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2110987A DE2110987B2 (de) 1971-03-08 1971-03-08 Verfahren zum Herstellen von dünnen Schichten aus Tantal

Publications (2)

Publication Number Publication Date
DE2110987A1 DE2110987A1 (de) 1972-09-14
DE2110987B2 true DE2110987B2 (de) 1978-11-16

Family

ID=5800841

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2110987A Withdrawn DE2110987B2 (de) 1971-03-08 1971-03-08 Verfahren zum Herstellen von dünnen Schichten aus Tantal

Country Status (7)

Country Link
US (1) US3808109A (enExample)
BE (1) BE780373A (enExample)
DE (1) DE2110987B2 (enExample)
FR (1) FR2128643B1 (enExample)
GB (1) GB1349833A (enExample)
IT (1) IT949790B (enExample)
NL (1) NL7202035A (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4046712A (en) * 1972-11-30 1977-09-06 United Kingdom Atomic Energy Authority Catalysts sputtered on substantially nonporous low surface area particulate supports
US3874922A (en) * 1973-08-16 1975-04-01 Boeing Co Tantalum thin film resistors by reactive evaporation
US4036708A (en) * 1976-05-13 1977-07-19 Bell Telephone Laboratories, Incorporated Technique for nucleating b.c.c. tantalum films on insulating substrates
JPS5671821A (en) 1979-11-14 1981-06-15 Hitachi Ltd Substrate for magnetic disc and its manufacture
EP0582387B1 (en) * 1992-08-05 1999-05-26 Sharp Kabushiki Kaisha Metallic wiring board and method for producing the same
EP2423158A1 (en) * 2004-03-24 2012-02-29 H. C. Starck Inc Methods of forming alpha and beta tantalum films with controlled and new microstructures
DE112006004000A5 (de) * 2006-06-16 2009-05-20 Siemens Aktiengesellschaft Thermisch beanspruchbares Bauteil mit einer Korrosionsschihct und Verfahren zu dessen Herstellung
CN113235060B (zh) * 2021-05-12 2023-01-06 中国兵器工业第五九研究所 一种全α相钽涂层的制备方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1665571B1 (de) * 1966-03-08 1971-09-09 Siemens Ag Verfahren zur herstellung von duennschichtbaugruppen der elektronik

Also Published As

Publication number Publication date
IT949790B (it) 1973-06-11
US3808109A (en) 1974-04-30
GB1349833A (en) 1974-04-10
BE780373A (fr) 1972-07-03
DE2110987A1 (de) 1972-09-14
FR2128643B1 (enExample) 1977-04-01
FR2128643A1 (enExample) 1972-10-20
NL7202035A (enExample) 1972-09-12

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