GB1344109A - Two terminal constant current circuit - Google Patents

Two terminal constant current circuit

Info

Publication number
GB1344109A
GB1344109A GB2417771*A GB2417771A GB1344109A GB 1344109 A GB1344109 A GB 1344109A GB 2417771 A GB2417771 A GB 2417771A GB 1344109 A GB1344109 A GB 1344109A
Authority
GB
United Kingdom
Prior art keywords
field
drain
effect transistor
transistor
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2417771*A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of GB1344109A publication Critical patent/GB1344109A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34—DC amplifiers in which all stages are DC-coupled
    • H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
    • H03F3/345—DC amplifiers in which all stages are DC-coupled with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34—DC amplifiers in which all stages are DC-coupled
    • H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
    • H03F3/347—DC amplifiers in which all stages are DC-coupled with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
    • H03K19/09441—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET of the same canal type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356086—Bistable circuits with additional means for controlling the main nodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Amplifiers (AREA)
  • Networks Using Active Elements (AREA)
  • Semiconductor Integrated Circuits (AREA)
GB2417771*A 1967-10-06 1971-04-19 Two terminal constant current circuit Expired GB1344109A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US67332867A 1967-10-06 1967-10-06
US2052270A 1970-03-18 1970-03-18

Publications (1)

Publication Number Publication Date
GB1344109A true GB1344109A (en) 1974-01-16

Family

ID=26693549

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2417771*A Expired GB1344109A (en) 1967-10-06 1971-04-19 Two terminal constant current circuit

Country Status (6)

Country Link
US (2) US3508084A (forum.php)
BE (1) BE764283A (forum.php)
FR (1) FR2084770A5 (forum.php)
GB (1) GB1344109A (forum.php)
NL (1) NL7103573A (forum.php)
SE (1) SE364829B (forum.php)

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US3643253A (en) * 1970-02-16 1972-02-15 Gte Laboratories Inc All-fet digital-to-analog converter
US3675143A (en) * 1970-02-16 1972-07-04 Gte Laboratories Inc All-fet linear voltage amplifier
US3832644A (en) * 1970-11-30 1974-08-27 Hitachi Ltd Semiconductor electronic circuit with semiconductor bias circuit
US3829795A (en) * 1971-08-13 1974-08-13 Rockwell International Corp Crystal oscillator using field effect transistors in an integrated circuit
US3743923A (en) * 1971-12-02 1973-07-03 Rca Corp Reference voltage generator and regulator
US3789246A (en) * 1972-02-14 1974-01-29 Rca Corp Insulated dual gate field-effect transistor signal translator having means for reducing its sensitivity to supply voltage variations
DE2232274C2 (de) * 1972-06-30 1982-05-06 Ibm Deutschland Gmbh, 7000 Stuttgart Statischer Halbleiterspeicher mit Feldeffekttransistoren
US3805095A (en) * 1972-12-29 1974-04-16 Ibm Fet threshold compensating bias circuit
US3813595A (en) * 1973-03-30 1974-05-28 Rca Corp Current source
DE2330233C3 (de) * 1973-06-14 1975-12-11 Robert 7995 Neukirch Buck Elektronisches, vorzugsweise berührungslos arbeitendes SchaHgerät
US3875430A (en) * 1973-07-16 1975-04-01 Intersil Inc Current source biasing circuit
USB387171I5 (forum.php) * 1973-08-09 1975-01-28
US3913026A (en) * 1974-04-08 1975-10-14 Bulova Watch Co Inc Mos transistor gain block
US3967187A (en) * 1974-08-09 1976-06-29 Solitron Devices, Inc. Current limiting of noise diodes
US3984761A (en) * 1974-08-28 1976-10-05 Bell Telephone Laboratories, Incorporated Line powered voltage regulator
JPS5249139B2 (forum.php) * 1974-09-04 1977-12-15
JPS5651590B2 (forum.php) * 1974-09-24 1981-12-07
JPS5150641A (ja) * 1974-10-30 1976-05-04 Hitachi Ltd Parusuhatsuseikairo
GB1533231A (en) * 1974-11-07 1978-11-22 Hitachi Ltd Electronic circuits incorporating an electronic compensating circuit
JPS5530312B2 (forum.php) * 1975-01-16 1980-08-09
US3996482A (en) * 1975-05-09 1976-12-07 Ncr Corporation One shot multivibrator circuit
DE2521949A1 (de) * 1975-05-16 1976-11-25 Itt Ind Gmbh Deutsche Monolithisch integrierbare mis- treiberstufe
GB1546066A (en) * 1975-05-27 1979-05-16 Standard Telephones Cables Ltd Voltage regulator for cmos circuits
US4009432A (en) * 1975-09-04 1977-02-22 Rca Corporation Constant current supply
US4010425A (en) * 1975-10-02 1977-03-01 Rca Corporation Current mirror amplifier
JPS5255832A (en) * 1975-11-04 1977-05-07 Seiko Epson Corp Passive display-type electronic apparatus
US4163161A (en) * 1975-11-24 1979-07-31 Addmaster Corporation MOSFET circuitry with automatic voltage control
US4004164A (en) * 1975-12-18 1977-01-18 International Business Machines Corporation Compensating current source
JPS5849885B2 (ja) * 1976-03-16 1983-11-07 日本電気株式会社 定電圧回路
CH623671A5 (en) * 1976-07-21 1981-06-15 Gen Electric Circuit arrangement for stabilising the feed voltage for at least one electronic circuit
US4093909A (en) * 1976-07-21 1978-06-06 General Electric Company Method and apparatus for operating a semiconductor integrated circuit at minimum power requirements
DE2638086A1 (de) * 1976-08-24 1978-03-02 Siemens Ag Integrierte stromversorgung
JPS5337842A (en) * 1976-09-20 1978-04-07 Nippon Precision Saakitsutsu Kk Electronic circuit
US4059811A (en) * 1976-12-20 1977-11-22 International Business Machines Corporation Integrated circuit amplifier
US4160259A (en) * 1976-12-27 1979-07-03 Zaidan Hojin Handotai Kenkyu Shinkokai Semiconductor device
US4423369A (en) * 1977-01-06 1983-12-27 Motorola, Inc. Integrated voltage supply
DE2708021C3 (de) * 1977-02-24 1984-04-19 Eurosil GmbH, 8000 München Schaltungsanordnung in integrierter CMOS-Technik zur Regelung der Speisespannung für eine Last
JPS5421102A (en) * 1977-07-18 1979-02-17 Toshiba Corp Semiconductor device circuit
US4158804A (en) * 1977-08-10 1979-06-19 General Electric Company MOSFET Reference voltage circuit
US4165478A (en) * 1977-09-21 1979-08-21 General Electric Company Reference voltage source with temperature-stable MOSFET amplifier
JPS5470782A (en) * 1977-11-16 1979-06-06 Seiko Instr & Electronics Ltd Electronic circuit for watch
GB1592800A (en) * 1977-12-30 1981-07-08 Philips Electronic Associated Linear amplifier
US4404477A (en) * 1978-02-22 1983-09-13 Supertex, Inc. Detection circuit and structure therefor
US4224539A (en) * 1978-09-05 1980-09-23 Motorola, Inc. FET Voltage level detecting circuit
US4296335A (en) * 1979-06-29 1981-10-20 General Electric Company High voltage standoff MOS driver circuitry
DE3026361A1 (de) * 1980-07-11 1982-02-04 Siemens AG, 1000 Berlin und 8000 München Aus mindestens zwei monolitisch zusammengefassten mis-feldeffekttransistoren bestehender elektrischer widerstand fuer integrierte halbleiterschaltungen
JPS583183A (ja) * 1981-06-30 1983-01-08 Fujitsu Ltd 半導体装置の出力回路
US4430583A (en) * 1981-10-30 1984-02-07 Bell Telephone Laboratories, Incorporated Apparatus for increasing the speed of a circuit having a string of IGFETs
US4433252A (en) * 1982-01-18 1984-02-21 International Business Machines Corporation Input signal responsive pulse generating and biasing circuit for integrated circuits
JPS6074644A (ja) * 1983-09-30 1985-04-26 Fujitsu Ltd Ｃｍｏｓゲ−トアレ−
US4661726A (en) * 1985-10-31 1987-04-28 Honeywell Inc. Utilizing a depletion mode FET operating in the triode region and a depletion mode FET operating in the saturation region
JP2559032B2 (ja) * 1986-09-13 1996-11-27 富士通株式会社 差動増幅回路
DE660520T1 (de) * 1993-11-30 1996-03-14 Siliconix Inc Bidirektionalstromsperrender MOSFET für Batterietrennschalter mit Schutzvorrichtung gegen den verkehrten Anschluss eines Batterieladegeräts.
US5536977A (en) * 1993-11-30 1996-07-16 Siliconix Incorporated Bidirectional current blocking MOSFET for battery disconnect switching
TW335557B (en) * 1996-04-29 1998-07-01 Philips Electronics Nv Semiconductor device
US8154320B1 (en) * 2009-03-24 2012-04-10 Lockheed Martin Corporation Voltage level shifter
US8723578B1 (en) 2012-12-14 2014-05-13 Palo Alto Research Center Incorporated Pulse generator circuit
US12416936B2 (en) * 2022-12-16 2025-09-16 Renesas Electronics Corporation Apparatus comprising a bias current generator

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US3257631A (en) * 1960-05-02 1966-06-21 Texas Instruments Inc Solid-state semiconductor network
US3289093A (en) * 1964-02-20 1966-11-29 Fairchild Camera Instr Co A. c. amplifier using enhancement-mode field effect devices
US3406298A (en) * 1965-02-03 1968-10-15 Ibm Integrated igfet logic circuit with linear resistive load
US3395290A (en) * 1965-10-08 1968-07-30 Gen Micro Electronics Inc Protective circuit for insulated gate metal oxide semiconductor fieldeffect device
US3490007A (en) * 1965-12-24 1970-01-13 Nippon Electric Co Associative memory elements using field-effect transistors
US3365707A (en) * 1967-06-23 1968-01-23 Rca Corp Lsi array and standard cells
US3508084A (en) * 1967-10-06 1970-04-21 Texas Instruments Inc Enhancement-mode mos circuitry
US3516004A (en) * 1968-07-23 1970-06-02 Rca Corp Signal translating circuit comprising a plurality of igfet amplifiers cascaded in direct coupled fashion

Also Published As

Publication number Publication date
FR2084770A5 (forum.php) 1971-12-17
NL7103573A (forum.php) 1971-09-21
US3678407A (en) 1972-07-18
DE2113067B2 (de) 1972-12-07
DE2113067A1 (de) 1971-09-30
US3508084A (en) 1970-04-21
SE364829B (forum.php) 1974-03-04
BE764283A (fr) 1971-08-02

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee