NL7103573A - - Google Patents

Info

Publication number
NL7103573A
NL7103573A NL7103573A NL7103573A NL7103573A NL 7103573 A NL7103573 A NL 7103573A NL 7103573 A NL7103573 A NL 7103573A NL 7103573 A NL7103573 A NL 7103573A NL 7103573 A NL7103573 A NL 7103573A
Authority
NL
Netherlands
Application number
NL7103573A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7103573A publication Critical patent/NL7103573A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34—DC amplifiers in which all stages are DC-coupled
    • H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
    • H03F3/345—DC amplifiers in which all stages are DC-coupled with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34—DC amplifiers in which all stages are DC-coupled
    • H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
    • H03F3/347—DC amplifiers in which all stages are DC-coupled with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
    • H03K19/09441—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET of the same canal type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356086—Bistable circuits with additional means for controlling the main nodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Engineering & Computer Science (AREA)
  • Computing Systems (AREA)
  • Mathematical Physics (AREA)
  • Amplifiers (AREA)
  • Networks Using Active Elements (AREA)
  • Semiconductor Integrated Circuits (AREA)
NL7103573A 1967-10-06 1971-03-17 NL7103573A (xx)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US67332867A 1967-10-06 1967-10-06
US2052270A 1970-03-18 1970-03-18

Publications (1)

Publication Number Publication Date
NL7103573A true NL7103573A (xx) 1971-09-21

Family

ID=26693549

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7103573A NL7103573A (xx) 1967-10-06 1971-03-17

Country Status (6)

Country Link
US (2) US3508084A (xx)
BE (1) BE764283A (xx)
FR (1) FR2084770A5 (xx)
GB (1) GB1344109A (xx)
NL (1) NL7103573A (xx)
SE (1) SE364829B (xx)

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US3643253A (en) * 1970-02-16 1972-02-15 Gte Laboratories Inc All-fet digital-to-analog converter
US3675143A (en) * 1970-02-16 1972-07-04 Gte Laboratories Inc All-fet linear voltage amplifier
US3832644A (en) * 1970-11-30 1974-08-27 Hitachi Ltd Semiconductor electronic circuit with semiconductor bias circuit
US3829795A (en) * 1971-08-13 1974-08-13 Rockwell International Corp Crystal oscillator using field effect transistors in an integrated circuit
US3743923A (en) * 1971-12-02 1973-07-03 Rca Corp Reference voltage generator and regulator
US3789246A (en) * 1972-02-14 1974-01-29 Rca Corp Insulated dual gate field-effect transistor signal translator having means for reducing its sensitivity to supply voltage variations
DE2232274C2 (de) * 1972-06-30 1982-05-06 Ibm Deutschland Gmbh, 7000 Stuttgart Statischer Halbleiterspeicher mit Feldeffekttransistoren
US3805095A (en) * 1972-12-29 1974-04-16 Ibm Fet threshold compensating bias circuit
US3813595A (en) * 1973-03-30 1974-05-28 Rca Corp Current source
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US3875430A (en) * 1973-07-16 1975-04-01 Intersil Inc Current source biasing circuit
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US3913026A (en) * 1974-04-08 1975-10-14 Bulova Watch Co Inc Mos transistor gain block
US3967187A (en) * 1974-08-09 1976-06-29 Solitron Devices, Inc. Current limiting of noise diodes
US3984761A (en) * 1974-08-28 1976-10-05 Bell Telephone Laboratories, Incorporated Line powered voltage regulator
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JPS5150641A (ja) * 1974-10-30 1976-05-04 Hitachi Ltd Parusuhatsuseikairo
GB1533231A (en) * 1974-11-07 1978-11-22 Hitachi Ltd Electronic circuits incorporating an electronic compensating circuit
JPS5530312B2 (xx) * 1975-01-16 1980-08-09
US3996482A (en) * 1975-05-09 1976-12-07 Ncr Corporation One shot multivibrator circuit
DE2521949A1 (de) * 1975-05-16 1976-11-25 Itt Ind Gmbh Deutsche Monolithisch integrierbare mis- treiberstufe
GB1546066A (en) * 1975-05-27 1979-05-16 Standard Telephones Cables Ltd Voltage regulator for cmos circuits
US4009432A (en) * 1975-09-04 1977-02-22 Rca Corporation Constant current supply
US4010425A (en) * 1975-10-02 1977-03-01 Rca Corporation Current mirror amplifier
JPS5255832A (en) * 1975-11-04 1977-05-07 Seiko Epson Corp Passive display-type electronic apparatus
US4163161A (en) * 1975-11-24 1979-07-31 Addmaster Corporation MOSFET circuitry with automatic voltage control
US4004164A (en) * 1975-12-18 1977-01-18 International Business Machines Corporation Compensating current source
JPS5849885B2 (ja) * 1976-03-16 1983-11-07 日本電気株式会社 定電圧回路
US4093909A (en) * 1976-07-21 1978-06-06 General Electric Company Method and apparatus for operating a semiconductor integrated circuit at minimum power requirements
CH623671A5 (en) * 1976-07-21 1981-06-15 Gen Electric Circuit arrangement for stabilising the feed voltage for at least one electronic circuit
DE2638086A1 (de) * 1976-08-24 1978-03-02 Siemens Ag Integrierte stromversorgung
JPS5337842A (en) * 1976-09-20 1978-04-07 Nippon Precision Saakitsutsu Kk Electronic circuit
US4059811A (en) * 1976-12-20 1977-11-22 International Business Machines Corporation Integrated circuit amplifier
US4160259A (en) * 1976-12-27 1979-07-03 Zaidan Hojin Handotai Kenkyu Shinkokai Semiconductor device
US4423369A (en) * 1977-01-06 1983-12-27 Motorola, Inc. Integrated voltage supply
DE2708021C3 (de) * 1977-02-24 1984-04-19 Eurosil GmbH, 8000 München Schaltungsanordnung in integrierter CMOS-Technik zur Regelung der Speisespannung für eine Last
JPS5421102A (en) * 1977-07-18 1979-02-17 Toshiba Corp Semiconductor device circuit
US4158804A (en) * 1977-08-10 1979-06-19 General Electric Company MOSFET Reference voltage circuit
US4165478A (en) * 1977-09-21 1979-08-21 General Electric Company Reference voltage source with temperature-stable MOSFET amplifier
JPS5470782A (en) * 1977-11-16 1979-06-06 Seiko Instr & Electronics Ltd Electronic circuit for watch
GB1592800A (en) * 1977-12-30 1981-07-08 Philips Electronic Associated Linear amplifier
US4404477A (en) * 1978-02-22 1983-09-13 Supertex, Inc. Detection circuit and structure therefor
US4224539A (en) * 1978-09-05 1980-09-23 Motorola, Inc. FET Voltage level detecting circuit
US4296335A (en) * 1979-06-29 1981-10-20 General Electric Company High voltage standoff MOS driver circuitry
DE3026361A1 (de) * 1980-07-11 1982-02-04 Siemens AG, 1000 Berlin und 8000 München Aus mindestens zwei monolitisch zusammengefassten mis-feldeffekttransistoren bestehender elektrischer widerstand fuer integrierte halbleiterschaltungen
JPS583183A (ja) * 1981-06-30 1983-01-08 Fujitsu Ltd 半導体装置の出力回路
US4430583A (en) * 1981-10-30 1984-02-07 Bell Telephone Laboratories, Incorporated Apparatus for increasing the speed of a circuit having a string of IGFETs
US4433252A (en) * 1982-01-18 1984-02-21 International Business Machines Corporation Input signal responsive pulse generating and biasing circuit for integrated circuits
JPS6074644A (ja) * 1983-09-30 1985-04-26 Fujitsu Ltd Ｃｍｏｓゲ−トアレ−
US4661726A (en) * 1985-10-31 1987-04-28 Honeywell Inc. Utilizing a depletion mode FET operating in the triode region and a depletion mode FET operating in the saturation region
JP2559032B2 (ja) * 1986-09-13 1996-11-27 富士通株式会社 差動増幅回路
DE660520T1 (de) * 1993-11-30 1996-03-14 Siliconix Inc Bidirektionalstromsperrender MOSFET für Batterietrennschalter mit Schutzvorrichtung gegen den verkehrten Anschluss eines Batterieladegeräts.
US5536977A (en) * 1993-11-30 1996-07-16 Siliconix Incorporated Bidirectional current blocking MOSFET for battery disconnect switching
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US8154320B1 (en) * 2009-03-24 2012-04-10 Lockheed Martin Corporation Voltage level shifter
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US3257631A (en) * 1960-05-02 1966-06-21 Texas Instruments Inc Solid-state semiconductor network
US3289093A (en) * 1964-02-20 1966-11-29 Fairchild Camera Instr Co A. c. amplifier using enhancement-mode field effect devices
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US3365707A (en) * 1967-06-23 1968-01-23 Rca Corp Lsi array and standard cells
US3508084A (en) * 1967-10-06 1970-04-21 Texas Instruments Inc Enhancement-mode mos circuitry
US3516004A (en) * 1968-07-23 1970-06-02 Rca Corp Signal translating circuit comprising a plurality of igfet amplifiers cascaded in direct coupled fashion

Also Published As

Publication number Publication date
US3508084A (en) 1970-04-21
BE764283A (fr) 1971-08-02
SE364829B (xx) 1974-03-04
DE2113067B2 (de) 1972-12-07
GB1344109A (en) 1974-01-16
DE2113067A1 (de) 1971-09-30
FR2084770A5 (xx) 1971-12-17
US3678407A (en) 1972-07-18

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BB A search report has been drawn up
BC A request for examination has been filed
BV The patent application has lapsed