GB1342513A - Ion engraving apparatus - Google Patents

Ion engraving apparatus

Info

Publication number
GB1342513A
GB1342513A GB2440371*A GB2440371A GB1342513A GB 1342513 A GB1342513 A GB 1342513A GB 2440371 A GB2440371 A GB 2440371A GB 1342513 A GB1342513 A GB 1342513A
Authority
GB
United Kingdom
Prior art keywords
cathode
mask
metal
plasma
guard ring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2440371*A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Publication of GB1342513A publication Critical patent/GB1342513A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
GB2440371*A 1970-03-18 1971-04-19 Ion engraving apparatus Expired GB1342513A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7009665A FR2082505A5 (de) 1970-03-18 1970-03-18

Publications (1)

Publication Number Publication Date
GB1342513A true GB1342513A (en) 1974-01-03

Family

ID=9052447

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2440371*A Expired GB1342513A (en) 1970-03-18 1971-04-19 Ion engraving apparatus

Country Status (5)

Country Link
US (1) US3730873A (de)
JP (1) JPS5145435B1 (de)
DE (1) DE2111732C3 (de)
FR (1) FR2082505A5 (de)
GB (1) GB1342513A (de)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2146836A (en) * 1983-08-12 1985-04-24 Centre Nat Rech Scient A source of ions with at least two ionization chambers, in particular for forming chemically reactive ion beams
GB2159753A (en) * 1984-03-06 1985-12-11 Asm Fico Tooling Method and apparatus for cleaning lead pins and the like before soldering operations
WO1988001435A1 (en) * 1986-08-13 1988-02-25 The Australian National University Improvements in reactive ion etching apparatus

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2241229C2 (de) * 1972-08-22 1983-01-20 Leybold-Heraeus GmbH, 5000 Köln Vorrichtung zum Ätzen von Substraten durch eine Glimmentladung
FR2232832A1 (en) * 1973-06-06 1975-01-03 Radiotechnique Compelec Discharge control in cathodic sputtering - using voltage variation on auxiliary insulated electrode to adjust gas supply
US3984301A (en) * 1973-08-11 1976-10-05 Nippon Electric Varian, Ltd. Sputter-etching method employing fluorohalogenohydrocarbon etching gas and a planar electrode for a glow discharge
US3943047A (en) * 1974-05-10 1976-03-09 Bell Telephone Laboratories, Incorporated Selective removal of material by sputter etching
US4169031A (en) * 1978-01-13 1979-09-25 Polyohm, Inc. Magnetron sputter cathode assembly
JPS5687672A (en) * 1979-12-15 1981-07-16 Anelva Corp Dry etching apparatus
US4333814A (en) * 1979-12-26 1982-06-08 Western Electric Company, Inc. Methods and apparatus for improving an RF excited reactive gas plasma
US4309267A (en) * 1980-07-21 1982-01-05 Bell Telephone Laboratories, Incorporated Reactive sputter etching apparatus
DE3045922A1 (de) * 1980-12-05 1982-07-08 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von strukturen von aus siliziden oder aus silizid-polysilizium bestehenden schichten durch reaktives sputteraetzen
US4362611A (en) * 1981-07-27 1982-12-07 International Business Machines Corporation Quadrupole R.F. sputtering system having an anode/cathode shield and a floating target shield
US4392932A (en) * 1981-11-12 1983-07-12 Varian Associates, Inc. Method for obtaining uniform etch by modulating bias on extension member around radio frequency etch table
US4392938A (en) * 1981-11-12 1983-07-12 Varian Associates, Inc. Radio frequency etch table with biased extension member
US4384938A (en) * 1982-05-03 1983-05-24 International Business Machines Corporation Reactive ion etching chamber
US4496448A (en) * 1983-10-13 1985-01-29 At&T Bell Laboratories Method for fabricating devices with DC bias-controlled reactive ion etching
US4600489A (en) * 1984-01-19 1986-07-15 Vac-Tec Systems, Inc. Method and apparatus for evaporation arc stabilization for non-permeable targets utilizing permeable stop ring
US4938859A (en) * 1984-07-31 1990-07-03 Vacuum Optics Corporation Of Japan Ion bombardment device with high frequency
JP2515731B2 (ja) * 1985-10-25 1996-07-10 株式会社日立製作所 薄膜形成装置および薄膜形成方法
US4595484A (en) * 1985-12-02 1986-06-17 International Business Machines Corporation Reactive ion etching apparatus
JPS6454733A (en) * 1987-08-26 1989-03-02 Toshiba Corp Production device for semiconductor
JP3033104B2 (ja) * 1989-11-17 2000-04-17 ソニー株式会社 エッチング方法
DE4025396A1 (de) * 1990-08-10 1992-02-13 Leybold Ag Einrichtung fuer die herstellung eines plasmas
US5662770A (en) * 1993-04-16 1997-09-02 Micron Technology, Inc. Method and apparatus for improving etch uniformity in remote source plasma reactors with powered wafer chucks
JP2659919B2 (ja) * 1994-01-13 1997-09-30 インターナショナル・ビジネス・マシーンズ・コーポレイション プラズマの不均一性を補正するプラズマ装置
JP3959745B2 (ja) * 1995-04-07 2007-08-15 セイコーエプソン株式会社 表面処理装置
US7528386B2 (en) * 2005-04-21 2009-05-05 Board Of Trustees Of University Of Illinois Submicron particle removal
WO2008053929A1 (fr) * 2006-11-02 2008-05-08 Tokyo Electron Limited Appareil permettant d'inspecter une structure fine, procédé permettant d'inspecter une structure fine et appareil de support de substrat
CN113561689A (zh) * 2021-07-28 2021-10-29 薛烁 一种合成珠宝加工专用雕刻装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2146836A (en) * 1983-08-12 1985-04-24 Centre Nat Rech Scient A source of ions with at least two ionization chambers, in particular for forming chemically reactive ion beams
GB2159753A (en) * 1984-03-06 1985-12-11 Asm Fico Tooling Method and apparatus for cleaning lead pins and the like before soldering operations
WO1988001435A1 (en) * 1986-08-13 1988-02-25 The Australian National University Improvements in reactive ion etching apparatus

Also Published As

Publication number Publication date
FR2082505A5 (de) 1971-12-10
DE2111732C3 (de) 1980-05-22
DE2111732A1 (de) 1971-10-07
DE2111732B2 (de) 1979-08-09
JPS5145435B1 (de) 1976-12-03
US3730873A (en) 1973-05-01

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee