GB1326139A - Semiconductor crystal - Google Patents

Semiconductor crystal

Info

Publication number
GB1326139A
GB1326139A GB2373771*A GB2373771A GB1326139A GB 1326139 A GB1326139 A GB 1326139A GB 2373771 A GB2373771 A GB 2373771A GB 1326139 A GB1326139 A GB 1326139A
Authority
GB
United Kingdom
Prior art keywords
resistivity
crystal
melt
wafers
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2373771*A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1326139A publication Critical patent/GB1326139A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
    • C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
GB2373771*A 1970-03-23 1971-04-19 Semiconductor crystal Expired GB1326139A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US2179870A 1970-03-23 1970-03-23

Publications (1)

Publication Number Publication Date
GB1326139A true GB1326139A (en) 1973-08-08

Family

ID=21806213

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2373771*A Expired GB1326139A (en) 1970-03-23 1971-04-19 Semiconductor crystal

Country Status (5)

Country Link
US (1) US3669757A (enExample)
JP (1) JPS5233468B1 (enExample)
DE (1) DE2114087A1 (enExample)
FR (1) FR2083895A5 (enExample)
GB (1) GB1326139A (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3069547D1 (en) * 1980-06-26 1984-12-06 Ibm Process for controlling the oxygen content of silicon ingots pulled by the czochralski method
US4342616A (en) * 1981-02-17 1982-08-03 International Business Machines Corporation Technique for predicting oxygen precipitation in semiconductor wafers
US4952425A (en) * 1987-11-27 1990-08-28 Ethyl Corporation Method of preparing high purity dopant alloys
US4789596A (en) * 1987-11-27 1988-12-06 Ethyl Corporation Dopant coated bead-like silicon particles
FI893246A7 (fi) * 1988-07-07 1990-01-08 Nippon Kokan Kk Foerfarande och anordning foer framstaellning av kiselkristaller.

Also Published As

Publication number Publication date
JPS5233468B1 (enExample) 1977-08-29
US3669757A (en) 1972-06-13
FR2083895A5 (enExample) 1971-12-17
DE2114087A1 (de) 1971-10-14

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee